Bernard S. Meyerson
Bernard S. Meyerson | |
|---|---|
| Born | 2 June 1954 |
| Nationality | American |
| Occupation | Solid state physicist |
Bernard S. Meyerson (born 2 June 1954) is an American solid state physicist.
Meyerson is a native of New York City, born on 2 June 1954.[1] After graduating from the City College of New York,[2] he completed a master's degree and doctorate at the City University of New York, and began working for IBM.[1][2]
Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications."[3] The APS awarded him the George E. Pake Prize in 2011.[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.[5]
References[]
- ^ Jump up to: a b "B. Meyerson". American Institute of Physics. Retrieved 22 February 2022.
- ^ Jump up to: a b c "2011 George E. Pake Prize Recipient". American Physical Society. Retrieved 22 February 2022.
- ^ "APS fellow archive". American Physical Society. Retrieved 22 February 2022.
- ^ "Past J.J. Ebers Award Winners". Electron Devices Society, IEEE. Retrieved 22 February 2022.
- ^ "Dr. Bernard S. Meyerson". United States National Academy of Engineering. Retrieved 22 February 2022.
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