Frank F. Fang
Frank F. Fang (born 11 September 1930 in Beijing) is a Chinese-American solid-state physicist. He was part of the team that succeeded in 1966 in the detection of a two-dimensional electron gas and its quantum properties in semiconductors.
Fang studied at the National Taiwan University with a bachelor's degree in 1951 and the University of Notre Dame with a master's degree in 1954. In 1959 he received his doctorate in electrical engineering at the University of Illinois at Urbana-Champaign. In 1959/60 he worked for Boeing and from 1960 he did research at IBM.[1]
John Robert Schrieffer had predicted 1956 quantum effects in electron transport due to the two-dimensional geometry in metal-insulator-semiconductor structure (MIS). The detection was first successfully achieved by the team of Fang, Alan B. Fowler, and at IBM in 1966 by applying strong magnetic fields.[2]
In 1982 Fang was elected a Fellow of the American Physical Society. In 1984 he was elected an IEEE Fellow for "the discovery and explanation of two-dimensional properties of silicon inversion layers and for contributions to semiconductor device research."[3]
In 1981, he received the Wetherill Medal from the Franklin Institute with Fowler, Howard, Stiles and ; Stern and Howard gave the theoretical explanation of the 1966 experiment.[4] In 1988 Fang received with Alan B. Fowler and Phillip J. Stiles the Oliver E. Buckley Condensed Matter Prize.
Selected publications[]
- Fang, F. F.; Fowler, A. B. (1968). "Transport Properties of Electrons in Inverted Silicon Surfaces". Physical Review. 169 (3): 619–631. Bibcode:1968PhRv..169..619F. doi:10.1103/PhysRev.169.619.
- Fang, F. F.; Stiles, P. J. (1968). "Effects of a Tilted Magnetic Field on a Two-Dimensional Electron Gas". Physical Review. 174 (3): 823–828. Bibcode:1968PhRv..174..823F. doi:10.1103/PhysRev.174.823.
- Fang, F. F.; Fowler, A. B. (1970). "Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers". Journal of Applied Physics. 41 (4): 1825–1831. Bibcode:1970JAP....41.1825F. doi:10.1063/1.1659111.
- Fang, F. F.; Fowler, A. B.; Hartstein, A. (1977). "Effective mass and collision time of (100) Si surface electrons". Physical Review B. 16 (10): 4446–4454. Bibcode:1977PhRvB..16.4446F. doi:10.1103/PhysRevB.16.4446.
- Luo, J.; Munekata, H.; Fang, F. F.; Stiles, P. J. (1988). "Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wells". Physical Review B. 38 (14): 10142–10145. Bibcode:1988PhRvB..3810142L. doi:10.1103/PhysRevB.38.10142. PMID 9945862.
References[]
- ^ "Frank F. Fang. Biography". Physics History Network. AIP.
- ^ Fowler, AB; Fang, FF; Howard, WE; Stiles PJ (16 May 1966). "Magneto-Oscillatory Conductance in Silicon Surfaces". Physical Review Letters. 16 (20): 901–903. Bibcode:1966PhRvL..16..901F. doi:10.1103/PhysRevLett.16.901.
- ^ IEEE Fellows Directory (Citation: For discovery and understanding of the two-dimensional properties of silicon inversion layers and for contributions to semiconductor device physics research.)
- ^ Stern, Frank; Howard, WE (15 November 1967). "Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit". Physical Review. 163 (3): 816–835. Bibcode:1967PhRv..163..816S. doi:10.1103/PhysRev.163.816.
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- 1930 births
- Living people
- National Taiwan University alumni
- University of Notre Dame alumni
- Grainger College of Engineering alumni
- Fellows of the American Physical Society
- Fellow Members of the IEEE
- Physicists from Beijing
- 20th-century American physicists
- Taiwanese people from Beijing
- Oliver E. Buckley Condensed Matter Prize winners
- American physicist stubs