Hydrogen silsesquioxane

Hydrogen silsesquioxane (R = H).

Hydrogen silsesquioxane(s) (HSQ, H-SiO_x, T^H_n, H-resin) are inorganic compounds with the empirical formula [HSiO_3/2]_n. HSQ was first reported in 1970 by Dow Corning.^[1] Typically, the cubic H₈Si₈O₁₂ (T^H₈) is used as the visual representation for HSQ. The composition of Dow’s HSQ was investigated by vapour phase chromatography (vpc), nuclear magnetic resonance (NMR), and infrared spectroscopy (IR).^[1] Dow Corning reported further composition investigations, via field desorption (FD), desorption chemical ionization (DCI) mass spectroscopy, and matrix-assisted laser desorption/ionization (MALDI).^[2] The preparation, separation, and analysis [elemental analysis (EA), gas chromatography–mass spectroscopy (GC-MS), IR, and NMR] of T^H₈, T^H₁₀,T^H₁₂, and T^H₁₄ was reported, albeit in low yields (<5%).^[3]

HSQ is primarily used as a negative resist in photolithography and electron-beam (e-beam) lithography. The use of HSQ as a negative resist was first reported in 1998^[4] and widely investigated in the 2000s. HSQ is commonly delivered in methyl isobutyl ketone (MIBK) and can be used to form 0.01–2 µm films on substrates/wafers. When exposed to electrons or extreme ultraviolet radiation (EUV), HSQ cross-links via hydrogen evolution and Si-O bond formation. Sufficiently dosed and exposed regions form a low dielectric constant (low-k) Si rich oxide that is chemically resistant/insoluble towards developers, such as tetramethylammonium hydroxide (TMAH). Sub-10 nm patterning is achievable with HSQ and a collection or practical knowledge for using HSQ is provided by Georgia Tech 1 and Yale 2. The nanoscale patterning capabilities and low-k of the Si rich oxide produced is useful for a broad scope of nano applications and devices.^[5]

HSQ has been available as 1 and 6% (wt%) MIBK solutions from Dow Inc. (Formally Dow Corning), called XR-1541-001 and XR-1541-006, respectively. HSQ in MIBK is known to have a short, problematic shelf life. Alternatively, Applied Quantum Materials Inc. (AQM), a Canadian company, manufactures HSQ as a powder (or made-to-order solution) with a longer shelf life 3.^[6]^,^[7]

References[]

^ ^a ^b Frye, Cecil L.; Collins, Ward T. (1970-09-01). "Oligomeric silsesquioxanes, (HSiO3/2)n". Journal of the American Chemical Society. 92 (19): 5586–5588. doi:10.1021/ja00722a009. ISSN 0002-7863.
^ Chen, Huiping; Tecklenburg, Ron E. (October 2006). "Characterization of low and intermediate molecular weight hydrogen silsesquioxanes by mass spectrometry". Journal of the American Society for Mass Spectrometry. 17 (10): 1438–1441. doi:10.1016/j.jasms.2006.06.010. ISSN 1044-0305. PMID 16872839.
^ Agaskar, P. A.; Day, V. W.; Klemperer, W. G. (1987-09-01). "A new route to trimethylsilylated spherosilicates. Synthesis and structure of [Si12O18](OSiMe3)12, D3h-[Si14O21](OSiMe3)14, and C2v-[Si14O21](OSiMe3)14". Journal of the American Chemical Society. 109 (18): 5554–5556. doi:10.1021/ja00252a058. ISSN 0002-7863.
^ Namatsu, H.; Yamaguchi, T.; Nagase, M.; Yamazaki, K.; Kurihara, K. (1998-03-01). "Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations". Microelectronic Engineering. International Conference on Micro- and Nanofarbication. 41–42: 331–334. doi:10.1016/S0167-9317(98)00076-8. ISSN 0167-9317.
^ Chen, Yifang (2015-03-05). "Nanofabrication by electron beam lithography and its applications: A review". Microelectronic Engineering. 135: 57–72. doi:10.1016/j.mee.2015.02.042. ISSN 0167-9317.
^ Shen, Jiashi; Aydinoglu, Ferhat; Soltani, Mohammad; Cui, Bo (2019-03-01). "E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life". Journal of Vacuum Science & Technology B. 37 (2): 021601. doi:10.1116/1.5079657. ISSN 2166-2746.
^ Jiashi, Shen (2018-09-28). "E-beam Lithography using Dry Powder HSQ Resist Having Long Shelf Life and Nanogap Electrode Fabrication". {{cite journal}}: Cite journal requires |journal= (help)

This material-related article is a stub. You can help Wikipedia by .

[:0-1] Frye, Cecil L.; Collins, Ward T. (1970-09-01). "Oligomeric silsesquioxanes, (HSiO3/2)n". Journal of the American Chemical Society. 92 (19): 5586–5588. doi:10.1021/ja00722a009. ISSN 0002-7863.

[2] Chen, Huiping; Tecklenburg, Ron E. (October 2006). "Characterization of low and intermediate molecular weight hydrogen silsesquioxanes by mass spectrometry". Journal of the American Society for Mass Spectrometry. 17 (10): 1438–1441. doi:10.1016/j.jasms.2006.06.010. ISSN 1044-0305. PMID 16872839.

[3] Agaskar, P. A.; Day, V. W.; Klemperer, W. G. (1987-09-01). "A new route to trimethylsilylated spherosilicates. Synthesis and structure of [Si12O18](OSiMe3)12, D3h-[Si14O21](OSiMe3)14, and C2v-[Si14O21](OSiMe3)14". Journal of the American Chemical Society. 109 (18): 5554–5556. doi:10.1021/ja00252a058. ISSN 0002-7863.

[4] Namatsu, H.; Yamaguchi, T.; Nagase, M.; Yamazaki, K.; Kurihara, K. (1998-03-01). "Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations". Microelectronic Engineering. International Conference on Micro- and Nanofarbication. 41–42: 331–334. doi:10.1016/S0167-9317(98)00076-8. ISSN 0167-9317.

[5] Chen, Yifang (2015-03-05). "Nanofabrication by electron beam lithography and its applications: A review". Microelectronic Engineering. 135: 57–72. doi:10.1016/j.mee.2015.02.042. ISSN 0167-9317.

[6] Shen, Jiashi; Aydinoglu, Ferhat; Soltani, Mohammad; Cui, Bo (2019-03-01). "E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life". Journal of Vacuum Science & Technology B. 37 (2): 021601. doi:10.1116/1.5079657. ISSN 2166-2746.

[7] Jiashi, Shen (2018-09-28). "E-beam Lithography using Dry Powder HSQ Resist Having Long Shelf Life and Nanogap Electrode Fabrication". {{cite journal}}: Cite journal requires |journal= (help)

[1]

[2]

[3]

[4]

[5]

[6]

[7]