Rzhanov Institute of Semiconductor Physics
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Founder(s) | Anatoly Rzhanov |
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Established | 1964 |
Director | Alexander Latyshev |
Owner | Siberian Branch of the Russian Academy of Sciences |
Address | Lavrentyev Prospekt 13, Novosibirsk, 630090, Russia |
Location | , |
Website | www |
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS (Russian: Институт физики полупроводников имени А. В. Ржанова СО РАН) is a research institute in Akademgorodok of Novosibirsk, Russia. It was founded in 1964.
History[]
The institute was created in 1964 by merging the Institute of Solid State Physics and Semiconductor Electronics and the Institute of Radiophysics and Electronics.[1]
In the 1970s, the institute began to work on developing molecular-beam epitaxy methods.[1]
Scientific activity[]
Development of the physical fundamentals of microelectronics, acousto-electronics, microphotoelectronics, quantum electronics; the study of physical phenomena in semiconductor thin-film structures etc.[2]
References[]
- ^ Jump up to: a b From electron to photon: ISP SB RAS is 55 years old. Novosti Sibirskoy Nauki. От электрона к фотону: ИФП СО РАН — 55 лет. Новости сибирской науки. May 14, 2019.
- ^ Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS. Siberian Branch of the Russian Academy of Sciences.
Categories:
- Research institutes in Novosibirsk
- Semiconductor companies of Russia
- Research institutes established in 1964
- 1964 establishments in the Soviet Union
- Research institutes in the Soviet Union