Tunnel injection

This article does not cite any sources. Please help by adding citations to reliable sources. Unsourced material may be challenged and removed. Find sources:  –  ·  ·  · scholar · JSTOR (December 2009) (Learn how and when to remove this template message)

Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator.

It is used to program NAND flash memory. The process used for erasing is called tunnel release.

An alternative to tunnel injection is the .

See also[]

• Hot carrier injection

References[]

This physics-related article is a stub. You can help Wikipedia by .

• v
• t