Narrow-gap semiconductor
This article needs additional citations for verification. (May 2015) |
Narrow-gap semiconductors are semiconducting materials with a band gap that is comparatively small compared to that of silicon, i.e. smaller than 1.11 eV at room temperature. They are used as infrared detectors or thermoelectrics.
List of narrow-gap semiconductors[]
This list is incomplete; you can help by . (February 2019) |
Name Chemical formula Groups Band gap (300 K) Mercury cadmium telluride Hg1−xCdxTe II-VI 0 to 1.5 eV Mercury zinc telluride Hg1−xZnxTe II-VI -0.15 to 2.25 eV Lead selenide PbSe IV-VI 0.27 eV Lead(II) sulfide PbS IV-VI 0.37 eV Lead telluride PbTe IV-VI 0.32 eV Indium arsenide InAs III-V 0.354 eV Indium antimonide InSb III-V 0.17 eV Gallium antimonide GaSb III-V 0.67 eV Cadmium arsenide Cd3As2 II-V 0.5 to 0.6 eV Bismuth telluride Bi2Te3 0.21 eV Tin telluride SnTe IV-VI 0.18 eV Tin selenide SnSe IV-VI 0.9 eV Silver(I) selenide Ag2Se 0.07 eV Magnesium silicide Mg2Si II-IV 0.73 eV[1]
See also[]
References[]
- ^ Nelson, J. T. Electrical and optical properties of MgPSn and Mg2Si. Am. J. Phys. 23: 390. 1955.
- Dornhaus, R., Nimtz, G., Schlicht, B. (1983). Narrow-Gap Semiconductors. Springer Tracts in Modern Physics 98, ISBN 978-3-540-12091-9 (print) ISBN 978-3-540-39531-7 (online)
- Nimtz, G. (1980), Recombination in Narrow-Gap Semiconductors, Physics Reports, 63, 265-300
Categories:
- Semiconductor material types
- Condensed matter stubs