Nickel monosilicide

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NiSi
FeB structure 2.png
Identifiers
  • 12035-57-3 checkY
3D model (JSmol)
  • InChI=1S/Ni.Si
    Key: PEUPIGGLJVUNEU-UHFFFAOYSA-N
  • [Si].[Ni]
Properties
NiSi
Molar mass 86.778 g/mol
Melting point 1,000 °C; 1,832 °F; 1,273 K[2]
-0.3×10−6 emu/g[1]
Structure[3]
Orthorhombic, oP8
Pnma, No. 62
a = 0.519 nm, b = 0.333 nm, c = 0.5628 nm
4
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

Nickel monosilicide is an intermetallic compound formed out of nickel and silicon. Like other nickel silicides, NiSi is of importance in the area of microelectronics.

Preparation[]

Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni2Si at 250 °C followed by NiSi at 350 °C and NiSi2 at approximately 800 °C.[4]

For ultra-thin nickel films, with thicknesses below 4 nm, nickel monosilicide is formed at lower annealing temperatures of 230–290 °C.[5]

Uses[]

Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced , low resistivity of 13–14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.[6]

References[]

  1. ^ Shinoda, Daizaburo; Asanabe, Sizuo (1966). "Magnetic Properties of Silicides of Iron Group Transition Elements". Journal of the Physical Society of Japan. 21 (3): 555. Bibcode:1966JPSJ...21..555S. doi:10.1143/JPSJ.21.555.
  2. ^ Gas, P.; d’Heurle, F. M. (1998). "Diffusion in silicides". In Beke, D. L. (ed.). Landolt-Börnstein - Group III Condensed Matter. 33A. Springer. pp. 1–38. doi:10.1007/10426818_13. ISBN 3-540-60964-4.
  3. ^ Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810
  4. ^ d'Heurle, F. M.; Gas, P. (February 1986). "Kinetics of formation of silicides: A review". Journal of Materials Research. 1 (1): 205–221. Bibcode:1986JMatR...1..205D. doi:10.1557/JMR.1986.0205.
  5. ^ Tran, Tuan T.; Lavoie, Christian; Zhang, Zhen; Primetzhofer, Daniel (January 2021). "In-situ nanoscale characterization of composition and structure during formation of ultrathin nickel silicide". Applied Surface Science. 536: 147781. arXiv:2006.12612. Bibcode:2021ApSS..53647781T. doi:10.1016/j.apsusc.2020.147781. S2CID 219981123.
  6. ^ Lavoie, C.; d’Heurle, F.M.; Detavernier, C.; Cabral, C. (November 2003). "Towards implementation of a nickel silicide process for CMOS technologies". Microelectronic Engineering. 70 (2–4): 144–157. doi:10.1016/S0167-9317(03)00380-0.
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