Triethylindium

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Triethylindium
Triethylindium 200.svg
Names
IUPAC name
Triethylindium
Other names
Indium triethyl, triethylindigane, indiumtriethyl, TEI, TEIn
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.011.905 Edit this at Wikidata
  • InChI=1S/3C2H5.In/c3*1-2;/h3*1H2,2H3;
    Key: OTRPZROOJRIMKW-UHFFFAOYSA-N
  • CC[In](CC)CC
Properties
C6H15In
Molar mass 202.004 g·mol−1
Appearance Colorless liquid
Boiling point 144 °C (291 °F; 417 K)
Hazards
GHS labelling:
GHS02: Flammable GHS05: Corrosive
Signal word
 Danger
H250, H314
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references

Triethylindium is an organometallic compound. Its chemical formula is C
6H
15In.[1][2]

Synthesis[]

This compound can be obtained by reacting indium(III) chloride with a diethyl ether solution of ethyl magnesium chloride:

InCl
3 + 3 C
2H
5MgCl → In(C2H5)3 + 3 MgCl
2

Other routes are also known.[3]

Properties[]

Indium triethyl is a colorless, toxic, oxidation and hydrolysis-sensitive liquid. It is a monomer in the gaseous and dissolved state. The compound reacts with halomethanes to form diethyl indium halides.[4]

Triethylindium is highly reactive with water:

In(C2H5)3 + H
2O → In(C2H5)2OH + C
2H
6↑

Applications[]

Indium triethyl is used to prepare indium phosphide layers for microelectronics.[5]

See also[]

References[]

  1. ^ "INDIUM TRIETHYL". chemicalbook.com. Retrieved 7 June 2017.
  2. ^ "Substance Name: Indium, triethyl". chem.nlm.nih.gov. Retrieved 7 June 2017.
  3. ^ Cowley, Alan H. (2009). Inorganic Syntheses. John Wiley & Sons. p. 51. ISBN 978-0-470-13297-5.
  4. ^ Maeda, Takayoshi; Tada, Hisashi; Yasuda, Kiyoshi; Okawara, Rokuro (11 September 1970). "Reactions of triethylindium with halomethanes: preparations and properties of diethylindium halides". Journal of Organometallic Chemistry. 27 (1): 13–18. doi:10.1016/S0022-328X(00)82987-3.
  5. ^ Sakaki, H.; Woo, J.C.; Yokoyama, N.; Harayama, Y. (1999). Compound Semiconductors: Proceedings of the Twenty-Fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998. CRC Press. p. 529. ISBN 978-0750306119.
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