Indium(III) selenide

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Indium(III) selenide
Names
IUPAC name
Indium(III) selenide
Other names
indium selenide, indium sesquiselenide
Identifiers
  • 12056-07-4 checkY
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Properties
In2Se3
Molar mass 466.516 g/mol
Appearance black crystalline solid
Density 5.80 g/cm3
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a "defect wurtzite structure." In all, there are five known forms (α, β, γ, δ, κ).[1] The α- β phase transition is accompanied by a change in electrical conductivity.[2] The band-gap of γ-In2Se3 is approximately 1.9 eV. The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques.[3] Indium selenide has been shown to have excellent electronic properties in its two-dimensional (few-layer) form.[4] Because of its air sensitivity, several processes have been developed to encapsulate the material for the integration in electronic devices.[5][6]

See also[]

General references[]

Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 978-0-08-037941-8.

Footnotes[]

  1. ^ Crystal structure of κ-In2Se3. Jasinski, J.; Swider, W.; Washburn, J.; Liliental-Weber, Z.; Chaiken, A.; Nauka, K.; Gibson, G. A.; Yang, C. C. Applied Physics Letters, Volume 81, Issue 23, id. 4356 (2002) doi:10.1063/1.1526925
  2. ^ Some Electrical and Optical Properties of In2Se3 D. Bidjin, S. Popovi , B. Elustka Physica Status Solidi A Volume 6, Issue 1 , Pages 295 – 299 doi:10.1002/pssa.2210060133
  3. ^ Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors Chang, K. J.; Lahn, S. M.; Chang, J. Y. Applied Physics Letters, Volume 89, Issue 18, id. 182118 (3 pages) (2006). doi: 10.1063/1.2382742
  4. ^ Arora, Himani; Erbe, Artur (2021). "Recent progress in contact, mobility, and encapsulation engineering of InSe and GaSe". InfoMat. 3 (6): 662–693. doi:10.1002/inf2.12160. ISSN 2567-3165.
  5. ^ Arora, Himani; Jung, Younghun; Venanzi, Tommaso; Watanabe, Kenji; Taniguchi, Takashi; Hübner, René; Schneider, Harald; Helm, Manfred; Hone, James C.; Erbe, Artur (2019-11-20). "Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties". ACS Applied Materials & Interfaces. 11 (46): 43480–43487. doi:10.1021/acsami.9b13442. ISSN 1944-8244. PMID 31651146. S2CID 204884014.
  6. ^ Arora, Himani (2020). "Charge transport in two-dimensional materials and their electronic applications" (PDF). Doctoral Dissertation. Retrieved July 1, 2021.

External links[]

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