List of semiconductor fabrication plants

From Wikipedia, the free encyclopedia

This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by Pure Play foundries, that manufacture designs from fabless companies and do not design their own ICs. Some Pure Play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

Glossary of terms[]

  • Wafer Size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
  • Process Technology Node – size of the smallest features that the facility is capable of etching onto the wafers
  • Production Capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month
  • Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity
  • Technology/Products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market

Open plants[]

Operating fabs include:

Company Plant Name Plant Location Plant Cost (in US$ billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) hideTechnology / Products
UMC - He Jian Fab 8N China China 0.750,[1] 1.2, +0.5 2003, May[1] 200 4000–1000, 500, 350, 250, 180, 110 77,000 Foundry
UMC Fab 6A Taiwan Taiwan, Hsinchu 0.35[1] 1989[1] 150 450 31,000 Foundry
UMC Fab 8AB Taiwan Taiwan, Hsinchu 1[1] 1995[1] 200 250 67,000[2] Foundry
UMC Fab 8C Taiwan Taiwan, Hsinchu 1[1] 1998[1] 200 350–110 37,000 Foundry
UMC Fab 8D Taiwan Taiwan, Hsinchu 1.5[1] 2000[1] 200 90 31,000 Foundry
UMC Fab 8E Taiwan Taiwan, Hsinchu 0.96[1] 1998[1] 200 180 37,000 Foundry
UMC Fab 8F Taiwan Taiwan, Hsinchu 1.5[1] 2000[1] 200 150 40,000 Foundry
UMC Fab 8S Taiwan Taiwan, Hsinchu 0.8[1] 2004[1] 200 350–250 31,000 Foundry
UMC Fab 12A Taiwan Taiwan, Tainan 4.65, 4.1, 6.6, 7.3[1] 2001, 2010, 2014, 2017[1] 300 28, 14 87,000[2] Foundry
UMC Fab 12i Singapore Singapore 3.7[1] 2004[1] 300 130–40 53,000 Foundry
UMC - United Semiconductor Fab 12X China China, Xiamen 6.2 2016 300 55–28 19,000-25,000 (2021) Foundry
UMC - (formerly MIFS) (formerly Fujitsu) Fab 12M (original Fujitsu installations)[3] Japan Japan, Mie 1974 150, 200, 300[4] 90–40 33,000 Foundry
Texas Instruments FFAB Germany Germany, Freising 200 1000–180
Texas Instruments (formerly National Semiconductor) MFAB[5] United States USA, ME, South Portland .932 1997 200 350, 250, 180
Texas Instruments RFAB United States USA, TX, Richardson 2009 300 180, 130 BiCMOS
Texas Instruments DMOS6 United States USA, TX, Dallas 300 130–65, 45
Texas Instruments DMOS5 United States USA, TX, Dallas 200 180 BiCMOS
Texas Instruments DFAB United States USA, TX, Dallas 1964 150/200 1000–500
Texas Instruments SFAB United States USA, TX, Sherman 150 2000–1000
Texas Instruments DHC United States USA, TX, Dallas 2019[6] Foundry
Texas Instruments DBUMP United States USA, TX, Dallas 2018[7] Foundry
Texas Instruments MIHO8 Japan Japan, Miho 200 350–250 BiCMOS
Texas Instruments (formerly Spansion) Aizu Japan Japan, Aizu 200 110
Texas Instruments (formerly SMIC - Cension) Chengdu (CFAB) China China, Chengdu 200
Tsinghua Unigroup[8] China China, Nanjing 10 (first phase), 30 Planned 300 100,000 (first phase) 3D NAND Flash
Tsinghua Unigroup[8] China China, Chengdu 28 Planned 300 500,000 Foundry
Tsinghua Unigroup - XMC (formerly Xinxin)[9] Fab 1 China China, Wuhan[1] 1.9 2008 300 90, 65, 60, 50, 45, 40, 32 30,000[10] Foundry, NOR
Tsinghua Unigroup - Yangtze Memory Technologies (YMTC) - XMC (formerly Xinxin)[9][10][8] Fab 2 China China, Wuhan 24 2018[1] 300 20 200,000 3D NAND
SMIC S1 Mega Fab (S1A/S1B/S1C)[11] China China, Shanghai 200 350–90 114,000[12] Foundry
SMIC S2 (Fab 8)[11] China China, Shanghai 300 45/40–32/28 20,000[12] Foundry
SMIC - SMSC SN1[11] China China, Shanghai 10 (expected) (planned) 300 12 / 14 70,000[9] Foundry
SMIC B1 Mega Fab (Fab 4, Fab 6)[11] China China, Beijing 2004 300 180–90/55 50,000[12] Foundry
SMIC B2A[11] China China, Beijing 3.59[13] 2014 300 45/40–32/28 35,000[12] Foundry
SMIC Fab 7[11] China China, Tianjin 2004 200 350–90 50,000[12] Foundry
SMIC Fab 15[11] China China, Shenzhen 2014 200 350–90 50,000[12] Foundry
SMIC SZ (Fab 16A/B)[11] China China, Shenzhen 2019 300 / 14 40,000[9] Foundry
SMIC[9] B3 China China, Beijing 7.6 Under construction 300 35,000 Foundry
Wuxi Xichanweixin (formerly SMIC -  [de]) (formerly  [de]) (formerly Micron)[14] (formerly Texas Instruments) LF Italy Italy, Avezzano 1995 200 180–90 50,000
Nanya Fab Taiwan Taiwan 199x 300 DRAM
Nanya Fab 2 Taiwan Taiwan, Linkou 0.8 2000 200[15] 175 30,000 DRAM
Nanya Fab 3A[16] Taiwan Taiwan, New Taipei City[17] 1.85[18] 2018 300 20 DRAM
Micron Fab 1 United States USA, VA, Manassas 1981 300 DRAM
(future Texas Instruments) Micron (formerly IM Flash) Fab 2 IMFT United States USA, UT, Lehi 300 25[19] 70,000 DRAM, 3D XPoint
Micron Fab 4[20] United States USA, ID, Boise 300 RnD
Micron (formerly Dominion Semiconductor) Fab 6 United States USA, VA, Manassas 1997 300 25[19] 70,000 DRAM, NAND FLASH, NOR
Micron (formerly TECH Semiconductor) Fab 7 (formerly TECH Semiconductor, Singapore)[21] Singapore Singapore 300 60,000 NAND FLASH
Micron (formerly IM Flash)[22] Fab 10[23] Singapore Singapore 3 2011 300 25 100,000 NAND FLASH
Micron (formerly Inotera) Fab 11[24] Taiwan Taiwan, Taoyuan 300 20 and under 80,000 DRAM
Micron Fab 13[25] Singapore Singapore 200 NOR
Micron Singapore Singapore[26] 200 NOR Flash
Micron Micron Semiconductor Asia Singapore Singapore[26]
Micron China China, Xi'an[26]
Micron (formerly Elpida Memory) Fab 15 (formerly Elpida Memory, Hiroshima)[20][26] Japan Japan, Hiroshima 300 20 and under 100,000 DRAM
Micron (formerly Rexchip) Fab 16 (formerly Rexchip, Taichung)[20] Taiwan Taiwan, Taichung 300 30 and under 80,000 DRAM, FEOL
Micron (formerly Cando) Micron Memory Taiwan[26] Taiwan Taiwan, Taichung ?, 2018 300 DRAM, BEOL
Micron A3 Taiwan Taiwan, Taichung[27] Under construction 300 DRAM
Intel D1B United States USA, OR, Hillsboro 1996 300 10 / 14 / 22 Microprocessors[28]
Intel D1C[29][28] United States USA, OR, Hillsboro 2001 300 10 / 14 / 22 Microprocessors[28]
Intel D1D[29][28] United States USA, OR, Hillsboro 2003 300 7 / 10 / 14 Microprocessors[28]
Intel D1X[30][28] United States USA, OR, Hillsboro 2013 300 7 / 10 / 14 Microprocessors[28]
Intel Fab 12[29][28] United States USA, AZ, Chandler 1996 300 14 / 22 / 65 Microprocessors & chipsets[28]
Intel Fab 32[29][31] United States USA, AZ, Chandler 3 2007 300 45
Intel Fab 32[29][28] United States USA, AZ, Chandler 2007 300 22 / 32 Microprocessors[28]
Intel Fab 42[32][33][28] United States USA, AZ, Chandler 10[34] 2020[35] 300 7 / 10 Microprocessors[28]
Intel 2, unknown[36][37] United States USA, AZ, Chandler 20[36] 2024[36] Microprocessors[36]
Intel Fab 11x[29][28] United States USA, NM, Rio Rancho 2002 300 32 / 45 Microprocessors[28]
Intel (formerly Micron) (formerly Numonyx) (formerly Intel) Fab 18[38] Israel Israel, Kiryat Gat 1996 200, 300 45 / 65 / 90 / 180 Microprocessors and chipsets,[39] NOR flash
Intel Fab 10[29] Republic of Ireland Ireland, Leixlip 1994 200
Intel Fab 14[29] Republic of Ireland Ireland, Leixlip 1998 200
Intel Fab 24[29][28] Republic of Ireland Ireland, Leixlip 2004 300 14 / 65 / 90[40] Microprocessors, Chipsets and Comms[28]
Intel Fab 28[29][28] Israel Israel, Kiryat Gat 2008 300 10 / 22 / 45 Microprocessors[28]
Intel Fab 68[29][41] China China, Dalian 2.5 2010 300 65[42] 30,000–52,000 Microprocessors (former), VNAND[28]
Intel Costa Rica Costa Rica, Heredia, Belén 1997 300 14 / 22 Packaging
General Motors Components Holdings Fab III United States USA, IN, Kokomo 125/200
Raytheon Systems Ltd United Kingdom UK, Scotland, Glenrothes 1960 100 CMOS-on-SiC, foundry
BAE Systems (formerly Sanders) United States USA, NH, Nashua[1] 1985[1] 100, 150 140, 100, 70, 50 MMIC, GaAs, GaN-on-SiC, foundry
Flir Systems United States USA, CA, Santa Barbara[43] 150 IR Detectors, Thermal Imaging Sensors
Teledyne DALSA Teledyne DALSA Semiconductor Canada Canada, Bromont, QC 1980 150/200 HV ASICs, HV CMOS, MEMS, CCD
Teledyne e2v Teledyne e2v United Kingdom UK, Chelmsford, Essex 1980 150/200 CCD Fab, CMOS Packaging, III-V, MCT, 6 inch and 8 inch backthinning
Qorvo (formerly RF Micro Devices) United States USA, NC, Greensboro[44] 100,150 500 8,000 SAW filters, GaAs HBT, GaAs pHEMT, GaN
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) United States USA, TX, Richardson[44] 0.5 1996 100, 150, 200 350, 250, 150, 90 8,000 DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC
Qorvo (formerly TriQuint Semiconductor) United States USA, OR, Hillsboro[44] 100, 150 500 Power amps, GaAs
Apple (formerly Maxim) (formerly Samsung) X3[45] United States USA, CA, San Jose ?, 1997, 2015[46] 600–90
Analog Devices Limerick Republic of Ireland Ireland, Limerick 200
Analog Devices Wilmington United States USA, MA, Wilmington 200/150
Analog Devices (formerly Linear Technology) Hillview United States USA, CA, Milipitas 150
Analog Devices (formerly Linear Technology) Camas United States USA, WA, Camas 150
Maxim MaxFabNorth[47] United States USA, OR, Beaverton
ISRO SCL[48] India India, Chandigarh 2006 200 180 MEMS, CMOS, CCD, N.S.
[49][50] MEMS[51] India India, Bangalore 1996 150 1000–500 MEMS
[52][53] CMOS[54] India India, Bangalore 1996 150 1000–500 CMOS
[55][56] GaAs[57] India India, Hyderabad 1996 150 700–500 MESFET
Tower Semiconductor (formerly Maxim)(formerly Philips)(formerly VLSI) Fab 9[58][59] United States USA, TX, San Antonio 2003 200 180 Foundry, Al BEOL, Power, RF Analog
Tower Semiconductor (formerly National Semiconductor) Fab 1[60] Israel Israel, Migdal Haemek 0.235[1] 1989, 1986[1] 150 1000–350 14,000 Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
Tower Semiconductor Fab 2[60] Israel Israel, Migdal Haemek 1.226[1] 2003 200 180–130 51,000[1] Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) Fab 3,[60] Newport Beach[1] United States USA, CA, Newport Beach 0.165[1] 1967, 1995[1] 200 130–500 25,000[1] Foundry, Al BEOL, SiGe, EPI
Tower Semiconductor – (formerly Panasonic) Fab 5,[60] Tonami[61] Japan Japan, Tonami 1994 200 500–130 Foundry, Analog/Mixed-Signal,Power,Discrete, NVM, CCD
Tower Semiconductor – (formerly Panasonic) Fab 7,[60] Uozu[61] Japan Japan, Uozu 1984 300 65. 45 Foundry, CMOS,CIS,RF SOI, Analog/Mixed-Signal
Tower Semiconductor – (formerly Panasonic) Fab 6,[60] Arai[61] Japan Japan, Arai 1976 200 130–110 Foundry, Analog/Mixed-Signal,CIS,NVM,Thick Cu RDL
Nuvoton[62] Fab2 Taiwan Taiwan 150 350–1000 nm 45,000[62] Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
Nuvoton Nuvoton Technology Corporation Taiwan Taiwan, No. 4, Creation Rd. III, Hsinchu Science Park
Microchip (formerly California Micro Devices) (formerly GTE) Fab 2 United States USA, AZ, Tempe 130, 150, 200 5000–350
Microchip (formerly Fujitsu) Fab 4 United States USA, OR, Gresham 2004 200 500–130
Microchip (formerly Atmel) Fab 5 United States USA, CO, Colorado Springs 150 1000–250
Rohm[63] (formerly Renesas) Shiga Factory Japan Japan 200 150 IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[63][64] Miyasaki Japan Japan 150 MEMS
Rohm (Lapis Semiconductor)[63] Building No.1 Japan Japan 1961[65] Transistors
Rohm (Lapis Semiconductor)[63] Building No.2 Japan Japan 1962[65] Transistors
Rohm (Lapis Semiconductor)[63] Building No.3 Japan Japan 1962[65] Transistors
Rohm (Lapis Semiconductor)[63] Building No.4 Japan Japan 1969[65] Transistors
Rohm (Lapis Semiconductor)[63] Chichibu Plant Japan Japan 1975[65] DRAM
Rohm (Lapis Semiconductor)[63] VLSI Laboratory No. 1 Japan Japan 1977[65] VLSI
Rohm (Lapis Semiconductor)[63] VLSI Laboratory No. 2 Japan Japan 1983[65]
Rohm (Lapis Semiconductor)[63] VLSI Laboratory No. 3 Japan Japan 1983[65] DRAM
Rohm (Lapis Semiconductor)[63] Oregon Plant United States USA, OR 1990[65]
Rohm (Lapis Semiconductor)[63] Thailand Thailand 1992[65]
Rohm (Lapis Semiconductor)[63] ULSI Laboratory No. 1 Japan Japan 1992[65] 500 DRAM
Rohm (Kionix)[66] Ithaca United States USA, NY, Ithaca 150 MEMS
Rohm (Kionix)[66] (formerly ) Kyoto Japan Japan, Kyoto 200 MEMS
Oki Electric Industry[67] Japan Japan, Tokyo, Minato-ku 1961 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[67] Miyazaki Oki Electric Co 1981 100, 150, 130, 76 3000 7,200 Bipolar, Mask ROM, DRAM[65]
Oki Electric Industry[67] Miyagi Facility 1988[65] 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[67] Hachioji Facility 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[68] 150 180–150 SoCs, LSI, Logic, Memory
Fuji Electric[69] Omachi Japan Japan, Nagano Prefecture
Fuji Electric[70] Iyama Japan Japan, Nagano Prefecture
Fuji Electric[71] Hokuriku Japan Japan, Toyama prefecture
Fuji Electric[72] Matsumoto Japan Japan, Nagano prefecture
Fujitsu Kawasaki Japan Japan, Kawasaki 1966[73]
Fujitsu[74][75] Fab B1 (at Mie)[76] Japan Japan, 1500 Tadocho Mizono, Kuwana, Mie[77] 2005 300 65, 90 15,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Fujitsu[74][75] Fab B2 (at Mie)[76] Japan Japan, 1500 Tadocho Mizono, Kuwana, Mie[77] 1 (total)[78] 2007, July 300 65, 90 25,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[79]
Fujitsu[74][75] Japan Japan, 1500 Tadocho Mizono, Kuwana, Mie[77] 2015 300 40[80] 5,000 Foundry
Fujitsu Kumagaya Plant[76] Japan Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 1974
Fujitsu[81] Suzaka Plant Japan Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Fujitsu Iwate Plant[82][4] Japan Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
Denso (formerly Fujitsu)[83] Denso Iwate[84][85][86] Japan Japan, Iwate Prefecture, Kanegasaki-cho 0.088 Under construction, 2019, May (planned) Semiconductor wafers and sensors (since June 2017)
Canon Inc. Oita[87] Japan Japan
Canon Inc. Kanagawa[88] Japan Japan
Canon Inc. Ayase[87] Japan Japan
Sharp Corporation Fukuyama[89] Japan Japan
Japan Semiconductor

[90]

Iwate Japan Japan
Japan Semiconductor[90] Oita Japan Japan
Kioxia Yokkaichi Operations[91][92] Japan Japan, Yokkaichi 1992 173,334[93][94][95][96] Flash Memory
Kioxia/SanDisk Fab 5 Phase 1 (at Yokkaichi Operations) Japan Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[97] 2011 Flash
Kioxia/SanDisk Fab 5 Phase 2[97] (at Yokkaichi Operations) Japan Japan, Mie 2011 300 15[98] Flash
Kioxia[99] Fab 3 (at Yokkaichi Operations) Japan Japan, Yokkaichi NAND Memory
Kioxia[100] Fab 4 (at Yokkaichi Operations) Japan Japan, Yokkaichi 2007 NAND Memory
Kioxia[101] Kaga Toshiba Japan Japan, Ishikawa Power semiconductor devices
Kioxia[102] Oita Operations Japan Japan, Kyushu
Kioxia[103][104] Fab 6 (phase 1) (at Yokkaichi Operations)[105] Japan Japan, Yokkaichi 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[106][92] 2018 BiCS FLASH™
Kioxia[103][104] Fab 6 (phase 2) (at Yokkaichi Operations) Japan Japan, Yokkaichi 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[106][92] Planned BiCS FLASH™
Kioxia[103][104] Japan Japan, Yokkaichi 4.6[107][108] Planned BiCS FLASH™
Kioxia[103] Fab 2 (at Yokkaichi Operations) Japan Japan, Yokkaichi 1995 3D NAND
Kioxia[109][110] New Fab 2 (at Yokkaichi Operations) Japan Japan, Yokkaichi 2016, July 15 3D NAND
Kioxia[111][112][113][114] Japan Japan, Iwate Prefecture Under Construction 3D NAND
Western Digital[115][116]
Hitachi[117] Rinkai Factory Japan Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221 MEMS Foundry
Hitachi[117] Haramachi Factory Japan Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 Power semiconductors
Hitachi[117] Yamanashi Factory Japan Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 Power semiconductors
ABB[118] Lenzburg Switzerland Switzerland, Lenzburg 0.140 2010 (second phase) 130, 150 18,750 (225,000 per year) High power semiconductors, diodes, IGBT, BiMOS
ABB[118] Czech Republic Czech Republic
Mitsubishi Electric[119] Power Device Works, Kunamoto Site Japan Japan Power semiconductors
Mitsubishi Electric[119] Power Device Works, Fukuoka Site Japan Japan, Kunamoto Prefecture, Fukuoka City[120] Power semiconductors and sensors[120]
Mitsubishi Electric[121] High frequency optical device manufacturing plant Japan Japan, Hyogo Prefecture[121] High frequency semiconductor devices (GaAsFET, GaN, MMIC)[121]
Powerchip Semiconductor Memory Foundry, Fab P1[122][123] Taiwan Taiwan, Hsinchu 2.24[1] 2002[1] 300 90, , 22[124] 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P2[123] Taiwan Taiwan, Hsinchu, Hsinchu Science Park 1.86[1] 2005[1] 300 90, , 22[124] 80,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerly Macronix) Fab P3[123] Taiwan Taiwan, Hsinchu, Hsinchu Science Park 300 90, , 22[124] 20,000 Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerly ) ProMOS Fab 4[125][126] Taiwan Taiwan, Taichung 1.6 300 70
Macronix (formerly )[127] Fab 5 300 50,000
Macronix[127] Fab 2 200 48,000
(future Foxconn) Macronix[127] Fab 1 150 40,000
Renesas[128] Naka Factory Japan Japan 2009 300 28[129]
Renesas (formerly Trecenti) Japan Japan[130][131] 300 180, 90, 65 Foundry
Renesas[128] Takasaki Factory Japan Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas[128] Shiga Factory Japan Japan, 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555
Renesas[128] Yamaguchi Factory Japan Japan, 20192-3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298
Renesas[128] Kawashiri Factory Japan Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861-4195
Renesas[128] Saijo Factory Japan Japan, 8-6, Hiuchi, Saijo-shi, Ehime, 793-8501
Renesas[128] Musashi Site Japan Japan, 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo, 187-8588
Renesas (formerly NEC Electronics) (formerly NEC) Roseville[132][133] United States USA, CA, Roseville 1.2[134] 2002, April 200 RAM, SoCs, Multimedia Chips
Renesas-Intersil[128] 1 Murphy Ranch Rd United States USA, CA, Milpitas
Integrated Device Technology United States USA, OR, Hillsboro 1997 200 140–100[135]
NEC[67] 100, 130, 150 SRAM, DRAM
NEC[136] Japan Japan DRAM
TSI Semiconductors[137] (formerly Renesas) Roseville fab, M-Line, TD-Line, K-Line[138][1] United States USA, CA, Roseville 1992, 1985[1] 200
TDK - Micronas FREIBURG[139][140] Germany Germany, 19 D-79108, Hans-Bunte-Strasse
TDK (formerly Renesas) Tsuruoka Higashi[141][142] 125[143]
TDK Japan Japan, Saku[144]
TDK - Tronics United States USA, TX, Addison[145]
Silanna (formerly Sapphicon Semiconductor) Australia Australia, Sydney Olympic Park[1] 0.030 1965,1989[1] 150
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) Australia Australia, Sydney

[146]

150 500, 250 RF CMOS, SOS, foundry
Murata Manufacturing[147] Nagano[143] Japan Japan 0.100 SAW filters[143]
Murata Manufacturing[147] Otsuki[143] Japan Japan
Murata Manufacturing[147] Kanazawa Japan Japan 0.111 SAW filters[143]
Murata Manufacturing (formerly Fujifilm)[148][149] Sendai Japan Japan, Miyagi Prefecture 0.092[143] MEMS[150]
Murata Manufacturing[148] Yamanashi Japan Japan, Yamanashi Prefecture
Murata Manufacturing[151] Yasu Japan Japan, Yasu, Shiga Prefecture
Mitsumi Electric[152] Semiconductor Works #3 Japan Japan, Atsugi Operation Base 2000
Mitsumi Electric[152] Japan Japan, Atsugi Operation Base 1979
Sony[153] Kagoshima Technology Center Japan Japan, Kagoshima 1973 Bipolar CCD, MOS, MMIC, SXRD
Sony[153] Oita Technology Center Japan Japan, Oita 2016 CMOS Image Sensor
Sony[153] Nagasaki Technology Center Japan Japan, Nagasaki 1987 MOS LSI, CMOS Image Sensors, SXRD
Sony[153] Kumamoto Technology Center Japan Japan, Kumamoto 2001 CCD Imgage Sensors, H-LCD, SXRD
Sony[153] Shiroishi Zao Technology Center Japan Japan, Shiroishi 1969 Semiconductor Lasers
Sony Sony Shiroishi Semiconductor Inc. Japan Japan, Miyagi Semiconductor Lasers[154]
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[153][155][156] Yamagata Technology Center Japan Japan, Yamagata 2014 CMOS Image Sensor, eDRAM (formerly)
F-5[157] 2005 200 130
SK Hynix[158] China China, Chongqing
SK Hynix[158] China China, Chongqing
SK Hynix[159][160] South Korea South Korea, Cheongju, Chungcheongbuk-do Under construction[161] NAND Flash
SK Hynix[160] South Korea South Korea, Cheongju Under construction NAND Flash
SK Hynix M8 South Korea South Korea, Cheongju 200 Foundry
SK Hynix M10 South Korea South Korea, Icheon 300 DRAM
SK Hynix M11 South Korea South Korea, Cheongju 300 NAND Flash
SK Hynix M12 South Korea South Korea, Cheongju 300 NAND Flash
SK Hynix HC1 China China, Wuxi 300 100,000[9] DRAM
SK Hynix HC2 China China, Wuxi 300 70,000[9] DRAM
SK Hynix M14 South Korea South Korea, Icheon 300 DRAM, NAND Flash
SK Hynix[160] M16 South Korea South Korea, Incheon 3.13 (13.4 total planned) 2021 (planned) 300 10 (EUV) 15,000-20,000 (initial) DRAM
LG Innotek[162] Paju South Korea South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 LED Epi-wafer, Chip, Package
Diodes Incorporated[163] (formerly Zetex Semiconductors) OFAB United Kingdom UK, Oldham 150
Diodes Incorporated (formerly BCD Semi)[164] China China 150 4000–1000
Diodes Incorporated (formerly Texas Instruments) GFAB United Kingdom UK, Scotland, Greenock 150/200 40,000
Lite-On Optoelectronics[165] China China, Tianjin
Lite-On Optoelectronics[165] Thailand Thailand, Bangkok
Lite-On Optoelectronics[165] China China, Jiangsu
Lite-On Semiconductor[166] Keelung Plant Taiwan Taiwan, Keelung 1990 100 Thyristor, DIscrete
Lite-On Semiconductor[166] Hsinchu Plant Taiwan Taiwan, Hsinchu 2005 Bipolar BCD, CMOS
Lite-On Semiconductor[166] Lite-On Semi (Wuxi) China China, Jiangsu 2004 100 Discrete
Lite-On Semiconductor[166] Wuxi WMEC Plant China China, Jiangsu 2005 Discrete, Power, Optical ICs
Lite-On Semiconductor[166] Shanghai (SSEC) Plant China China, Shanghai 1993 76 Fab, Assembly
Trumpf[167] (formerly Philips Photonics) Germany Germany, Ulm VCSEL
Philips[168] Netherlands Netherlands, Eindhoven 200,150 30,000 R&D, MEMS
NEWPORT WAFER FAB[169] (formerly Infineon Technologies) FAB11 United Kingdom UK, Wales, Newport 200[170] 180–700[170] 32,000[170] Foundry, Compound Semiconductors, IC, MOSFET, IGBT[171]
Nexperia (formerly NXP Semiconductors) (formerly Philips) Hamburg site[172] Germany Germany, Hamburg 1953 200 35,000 Small-signal and bipolar discrete devices
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) Manchester[172] United Kingdom UK, Bramhall Moor Lane, Pepper Rd, Hazel Grove, Stockport SK7 5BJ 1987? 150, 200 24,000 GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors (formerly Philips) ICN8 Netherlands Netherlands, Nijmegen 200 40,000+[173] SiGe
NXP Semiconductors Japan Japan[67] Bipolar, Mos, Analog, Digital, Transistors, Diodes
NXP Semiconductors - SSMC SSMC Singapore Singapore 1.7[1] 2001[1] 200 120 53,000 SiGe
NXP Semiconductors - Jilin Semiconductor China China, Jilin 130
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Oak Hill Fab[174] United States USA, TX, Austin .8[175] 1991 200 250
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) Chandler Fab[176] United States USA, AZ, Chandler[177] 1.1[178] +0.1 (GaN) 1993 150 (GaN), 200 180 GaN-on-SiC pHEMT
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) ATMC[179] United States USA, TX, Austin 1995 200 90
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) MOTOFAB1[180] Mexico Mexico, Guadalajara 2002
AWSC Taiwan Taiwan, Tainan[1] 1999[1] 150 12,000 Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP
Skyworks Solutions[181] (formerly Conexant) (formerly Rockwell) United States USA, CA 100, 150 Compound Semiconductors (GaAs, AlGaAs, InGaP)
Skyworks Solutions[181] (formerly Alpha Industries) United States USA, MA, Woburn 100, 150 RF/cellular components (SiGe, GaAs)
Skyworks Solutions[181] Japan Japan, Osaka SAW, TC-SAW Filters
Skyworks Solutions[181] Japan Japan, Kadoma SAW, TC-SAW Filters
Skyworks Solutions[181] Singapore Singapore, Bedok South Road SAW, TC-SAW Filters
Win Semiconductor Fab A[182] Taiwan Taiwan, Taoyuan City 150[183] 2000–10 Foundry, GaAs
Win Semiconductor Fab B[182] Taiwan Taiwan, Taoyuan City 150[183] 2000–10 Foundry, GaAs, GaN
Win Semiconductor Fab C Taiwan Taiwan, Taoyuan[1] 0.050, 0.178 2000, 2009[1] 150 Foundry, GaAs
ON Semiconductor (formerly Motorola) ISMF Malaysia Malaysia, Seremban 150 350 80,000 Discrete
ON Semiconductor (formerly Truesense Imaging, Kodak) Rochester United States USA, NY, Rochester[184] CCDs and Image Sensors
ON Semiconductor (formerly LSI) Gresham[185] United States USA, OR, Gresham 200 110
ON Semiconductor (formerly TESLA) Roznov Czech Republic Czech Republic, Roznov 150
ON Semiconductor (formerly AMI Semiconductor) Pocatello[186] United States USA, ID, Pocatello 200 350
ON Semiconductor (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec) Oudenaarde Belgium Belgium, Oudenaarde 150 350 4,000
ON Semiconductor (formerly Sanyo)[187][188] Niigata Japan Japan, Niigata 130, 150 350
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) United States USA, PA, Mountain Top 1960/1997 200 350
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) United States USA, ME, South Portland 1960/1997 200 350
ON Semiconductor (formerly Fujitsu)[189][190] Aizu Wakamatsu Plant[191] Japan Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 1970[73] 150, 200[192][193][194][195] Memory, Logic
ams[196] FAB B Austria Austria, Unterpremstaetten 200 350
Osram (Osram Opto Semiconductors) Malaysia Malaysia, Kulim, Kulim Hi-Tech Park 0.350, 1.18[197] 2017, 2020 (second phase, planned)[198][199] 150 LEDs
Osram (Osram Opto Semiconductors) Malaysia Malaysia, Penang[200][201] 2009 100 LEDs
Osram (Osram Opto Semiconductors) Germany Germany, Regensburg[202] 2003, 2005 (second phase)[203] LEDs
Winbond Memory Product Foundry[204] Taiwan Taiwan, Taichung 300 46
Winbond CTSP Site[205][206] Taiwan Taiwan, No. 8, Keya 1st Rd.,Daya Dist.,Central Taiwan Science Park, Taichung City 42881 300
Winbond[207] Planned 300
Vanguard International Semiconductor Fab 1 Taiwan Taiwan, Hsinchu 0.997[1] 1994[1] 200 55,000 Foundry
Vanguard International Semiconductor (formerly Winbond) Fab 2 (formerly Fab 4&5)[208] Taiwan Taiwan, Hsinchu 0.965[1] 1998[1] 200 55,000 Foundry
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) Fab 3E[209] Singapore Singapore 1.3[1] 200 180 34,000 Foundry
TSMC Fab 2[210] Taiwan Taiwan, Hsinchu 0.735[1] 1990[1] 150 88,000[211][1] Foundry
TSMC Fab 3 Taiwan Taiwan, Hsinchu 2[1] 1995[1] 200 100,000[1] Foundry
TSMC Fab 5 Taiwan Taiwan, Hsinchu 1.4[1] 1997[1] 200 48,000[1] Foundry
TSMC Fab 6 Taiwan Taiwan, Tainan 2.1[1] 2000, January; 2001[130] 200, 300 180–? 99,000[1] Foundry
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[212][213][214] Fab 7[215] Taiwan Taiwan 200 350, 250, 220, 180 33,000 Foundry (current)

DRAM (former), Logic (former)

TSMC (formerly WSMC) Fab 8 Taiwan Taiwan, Hsinchu 1.6[1] 1998[1] 200 250, 180 85,000[1] Foundry
TSMC (formerly WSMC)[131] 2000 200 250, 150 30,000 Foundry
TSMC China Company Fab 10 China China, Shanghai 1.3[1] 2004[1] 200 74,000 Foundry
TSMC WaferTech Fab 11 United States USA, WA, Camas 1.2 1998 200 350, 250, 180, 160 33,000 Foundry
TSMC Fab 12 Taiwan Taiwan, Hsinchu 5.2, 21.6 (total, all phases combined)[1] 2001[1] 300 150–28 77,500–123,800 (all phases combined)[1] Foundry
TSMC Fab 12A Taiwan Taiwan, Hsinchu 300 25,000 Foundry
TSMC Fab 12B Taiwan Taiwan, Hsinchu 300 25,000 Foundry
TSMC Fab 12 (P4) Taiwan Taiwan, Hsinchu 6[1] 2009[1] 300 20 40,000[1] Foundry
TSMC Fab 12 (P5) Taiwan Taiwan, Hsinchu 3.6[1] 2011[1] 300 20 6,800[1] Foundry
TSMC Fab 12 (P6) Taiwan Taiwan, Hsinchu 4.2[1] 2013[1] 300 16 25,000 Foundry
TSMC Fab 12 (P7) Taiwan Taiwan, Hsinchu 300 16 Foundry
TSMC Fab 14 Taiwan Taiwan, Tainan 5.1[1] 2002,[130] 2004[1] 300 20 82,500[1] Foundry
TSMC Fab 14 (B) Taiwan Taiwan, Tainan 300 16 50,000+[216] Foundry
TSMC Fab 14 (P3)[1] Taiwan Taiwan, Tainan 3.1[1] 2008[1] 300 16 55,000[1] Foundry
TSMC Fab 14 (P4)[1] Taiwan Taiwan, Tainan 3.750[1] 2011[1] 300 16 45,500[1] Foundry
TSMC Fab 14 (P5)[1] Taiwan Taiwan, Tainan 3.650[1] 2013[1] 300 16 Foundry
TSMC Fab 14 (P6)[1] Taiwan Taiwan, Tainan 4.2[1] 2014[1] 300 16 Foundry
TSMC Fab 14 (P7)[1] Taiwan Taiwan, Tainan 4.850[1] 2015[1] 300 16 Foundry
TSMC Fab 15[217] Taiwan Taiwan, Taichung 9.3 2011 300 20 100,000+(166,000 estimate)[218][216][219] Foundry
TSMC Fab 15 (B) Taiwan Taiwan, Taichung 300 Foundry
TSMC Fab 15 (P1)[1] Taiwan Taiwan, Taichung 3.125[1] 2011 300 4,000[1] Foundry
TSMC Fab 15 (P2)[1] Taiwan Taiwan, Taichung 3.150[1] 2012[1] 300 Foundry
TSMC Fab 15 (P3)[1] Taiwan Taiwan, Taichung 3.750[1] 2013[1] 300 Foundry
TSMC Fab 15 (P4)[1] Taiwan Taiwan, Taichung 3.800[1] 2014[1] 300 Foundry
TSMC Fab 15 (P5)[1] Taiwan Taiwan, Taichung 9.020[1] 2016[1] 300 35,000 Foundry
TSMC Fab 15 (P6 & P7) Taiwan Taiwan, Taichung 2019 300 Foundry
TSMC Nanjing Company Fab 16 China China, Nanjing 2018 300 20,000 Foundry
TSMC Fab 18 (P1-P3) Taiwan Taiwan, Southern Taiwan Science Park[220][221] 17.08 2020 (P7 under construction) 300 5[222] 120,000 Foundry
TSMC Fab 18 (P4-P6) Taiwan Taiwan, Southern Taiwan Science Park 2022 (planned), under construction 300 3[9][223][224] 120,000 Foundry
TSMC Fab 20 (P1-P4) Taiwan Taiwan, Hsinchu 2024-2025 (planned) 300 2 Foundry
TSMC Fab 21 United States USA, AZ, Phoenix 12[225] 2024 (planned), P1 under construction[225] 300 5 20,000 Foundry
Epistar Fab F1[226] Taiwan Taiwan, Longtan Science Park LEDs
Epistar Fab A1[226] Taiwan Taiwan, Hsinchu Science Park LEDs
Epistar Fab N2[226] Taiwan Taiwan, Hsinchu Science Park LEDs
Epistar Fab N8[226] Taiwan Taiwan, Hsinchu Science Park LEDs
Epistar Fab N1[226] Taiwan Taiwan, Hsinchu Science Park LEDs
Epistar Fab N3[226] Taiwan Taiwan, Hsinchu Science Park LEDs
Epistar Fab N6[226] Taiwan Taiwan, Chunan Science Park LEDs
Epistar Fab N9[226] Taiwan Taiwan, Chunan Science Park LEDs
Epistar Fab H1[226] Taiwan Taiwan, Central Taiwan Science Park LEDs
Epistar Fab S1[226] Taiwan Taiwan, Tainan Science Park LEDs
Epistar Fab S3[226] Taiwan Taiwan, Tainan Science Park LEDs
Epistar (formerly TSMC)[227][228][229] Taiwan Taiwan, Hsin-Chu Science Park 0.080 2011, second half LEDs
Lextar T01 Taiwan Taiwan, Hsinchu Science Park LEDs
GCS United States USA, CA, Torrance[1] 1999[1] 100 6,400 Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs
Bosch Germany Germany, Reutlingen 1995[230] 150 ASIC, analog, power, SiC
Bosch Germany Germany, Dresden 1.0[231] 2021 300 65
Bosch WaferFab Germany Germany, Reutlingen 0.708[232] 2010[230] 200 30,000 ASIC, analog, power, MEMS
STMicroelectronics AMK8 (second, newer fab) Singapore Singapore, Ang Mo Kio 1995 200
STMicroelectronics (formerly SGS Microelettronica) AMJ9 (first fab) Singapore Singapore, Ang Mo Kio 1984[233] 150, 200 6” 14 kpcs/day, 8” 1.4 kpcs/day Power-MOS/ IGBT/ bipolar/ CMOS
STMicroelectronics Crolles 1 / Crolles 200 France France, Crolles 1993 200 25,000
STMicroelectronics Crolles2 / Crolles 300 France France, Crolles 2003 300 90, 65, 45, 32, 28 20,000 FDSOI
STMicroelectronics Tours France France, Tours 200 500 8": 9kpcs/W; 12" 400–1000/W ASIC
STMicroelectronics (formerly SGS-ATES) R2 (upgraded in 2001 from R1) Italy Italy, Agrate Brianza 1963 200
STMicroelectronics (formerly SGS-ATES) AG8/AGM Italy Italy, Agrate Brianza 1963 200
STMicroelectronics Catania Italy Italy, Catania 1997 150 (GaN), 200 GaN
STMicroelectronics Rousset France France, Rousset 2000 200
X-Fab Erfurt Germany Germany, Erfurt 1985[1] 200[234] 600–1000[234] 11200–[234] Foundry
X-Fab (formerly ZMD) Dresden Germany Germany, Dresden 0.095[1] 1985[1] 200[235] 350–1000[235] 6000–[235] Foundry, CMOS, GaN-on-Si
X-Fab (formerly Itzehoe) Itzehoe Germany Germany, Itzehoe 200[236] 13000–[236] Foundry, MEMS
X-Fab (formerly 1st Silicon)[237][238] Kuching Malaysia Malaysia, Kuching 1.89[1] 2000[1] 200[239] 130–350[239] 30,000–[239] Foundry
X-Fab (formerly Texas Instruments) Lubbock United States USA, TX, Lubbock 0.197[1] 1977[1] 150, 200[240] 600–1000[240] 15000–[240] Foundry, SiC
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[241] ACL-AMF France France, Corbeil-Essonnes 1991, 1964[1] 200 130–350 Foundry, CMOS, RF SOI
CEITEC Brazil Brazil, Porto Alegre 2010 200 600–1000 RFID
IXYS Germany Germany IGBT[242]
IXYS United Kingdom UK[242]
IXYS United States USA, MA[242]
IXYS United States USA, CA[242]
Samsung V1-Line[243] South Korea South Korea, Hwaseong 6 2020, February 20 300 7 Microprocessors, Foundry
Samsung S3-Line[244] South Korea South Korea, Hwaseong 10.2, 16.2 (planned)[245][246] 300 10 200,000 DRAM, VNAND, Foundry
Samsung S2-Line[247] United States USA, TX, Austin 16[248][249] 2011 300 65–11 92,000 Microprocessors, FDSOI, Foundry, NAND[250]
Samsung S1-Line[251] South Korea South Korea, Giheung 33 (total) 2005 (second phase), 1983 (first phase)[252][253] 300 65–7 62,000 Microprocessors, S.LSI, LEDs, FDSOI, Foundry[254]
Samsung Pyeongtaek[255][256][245] South Korea South Korea, Pyeongtaek 14.7, 27 (total)[257][249][258][259][260][261][262][161] 2017, July 6 300 14 450,000[263] V-NAND, DRAM, Foundry
Samsung 6 Line[264] South Korea South Korea, Giheung 200 180–65 Foundry
Samsung Samsung China Semiconductor[265] China China, Shaanxi Province DDR Memory
Samsung Samsung Suzhou Research Center (SSCR)[251] China China, Suzhou, Suzhou Industrial Park DDR Memory
Samsung Onyang Complex[265] South Korea South Korea, Chungcheongnam-do display.backend process.test
Samsung F1x1[266][245] China China, Xian 2.3[267] 2014 (first phase, second phase is under review)[245] 300 20 100,000 VNAND
Samsung Giheung Campus[268] South Korea South Korea, Gyeonggi-do, Yongin LEDs
Samsung Hwasung Campus[268] South Korea South Korea, Gyeonggi-do, Hwaseong LEDs
Samsung Tianjin Samsung LED Co., Ltd.[268] China China, Tianjin, Xiqing, Micro-Electronic Industrial Park, Weisi Road LEDs
Seagate United States USA, MN[269]
Seagate United Kingdom UK, Northern Ireland[270][271][272][273]
Broadcom Limited United States USA, CO, Fort Collins[274]
Cree Inc.[275] Durham United States USA, NC, Durham Compound Semiconductors, LEDs
Cree Inc.[276] Research Triangle Park United States USA, NC GaN HEMT RF ICs
SMART Modular Technologies Brazil Brazil, Atibaia 2006 Packaging
Changxin Memory Technologies China China 7.2 2019 300 19, 17 125,000 DRAM[277]
Infineon Technologies Villach Austria Austria, Villach 1970[278] 100/150/200/300 MEMS, SiC, GaN
Infineon Technologies Dresden Germany Germany, Dresden 3[279] 1994/2011[280] 200/300 90
Infineon Technologies Kulim[281] Malaysia Malaysia, Kulim 2006[282] 200/300 50,000
Infineon Technologies Kulim 2 Malaysia Malaysia, Kulim 2015 200/300 50,000
Infineon Technologies Regensburg[283] Germany Germany, Regensburg 1959
Infineon Technologies Cegled[284] Hungary Hungary, Cegled
Infineon Technologies Cheonan South Korea South Korea, Cheonan-si
Infineon Technologies El Segundo United States USA, CA, El Segundo[285]
Infineon Technologies Batam Indonesia Indonesia, Batam
Infineon Technologies Leominster United States USA
Infineon Technologies Malacca Malaysia Malaysia
Infineon Technologies Mesa United States USA
Infineon Technologies Morgan Hill United States USA
Infineon Technologies Morrisville United States USA
Infineon Technologies Neubiberg Germany Germany
Infineon Technologies San Jose United States USA
Infineon Technologies Singapore Singapore
Infineon Technologies Temecula United States USA
Infineon Technologies Tijuana Mexico Mexico
Infineon Technologies Warstein Germany Germany
Infineon Technologies Wuxi China China
Infineon Technologies - Cypress Semiconductor Fab25 United States USA, TX, Austin 1994 200 Flash / Logic
SkyWater Technology (formerly Cypress Semiconductor) (formerly Control Data) (formerly VTC) Minnesota fab United States USA, MN, Bloomington 1991 200 65, 90, 130, 180, 250, 350 Foundry, SOI, FDSOI, MEMS, SiPh, CNT, 3D packaging, superconducting ICs
D-Wave Systems[286] Superconducting Foundry[287] Quantum Processing Units (QPUs)[287]
GlobalFoundries (formerly AMD) Fab 1 Module 1[288] Germany Germany, Dresden 3.6[1] 2005 300 22–45 35,000[1] Foundry, SOI, FDSOI
GlobalFoundries (formerly AMD) Fab 1 Module 2 Germany Germany, Dresden 4.9[1] 1999 300 22–45 25,000[1] Foundry, SOI
GlobalFoundries Fab 1 Module 3 Germany Germany, Dresden 2.3[1] 2011[1] 300 22–45 6,000[1] Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 2[209] Singapore Singapore 1.3[1] 1995[1] 200 350–600 56,000[1] Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 3/5[209] Singapore Singapore 0.915, 1.2[1] 1997, 1995[1] 200 180–350 54,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 6[209] (merged into Fab 7) Singapore Singapore 1.4[1] 2000[1] 200, 300 (merged) 110–180 45,000 Foundry, SOI
GlobalFoundries (formerly Chartered) Fab 7[288] Singapore Singapore 4.6[1] 2005[1] 300 40, 65, 90, 110, 130 50,000 Foundry, Bulk CMOS, RF SOI
GlobalFoundries Fab 8[288] United States USA, NY, Malta 4.6, 2.1, 13+ (total)[289][290] 2012, 2014[1] 300 12 / 14 / 22 / 28 60,000 Foundry, High-K Metal Gate,[291] SOI FinFET
GlobalFoundries Technology Development Center[1] United States USA, NY, Malta 1.5[1] 2014[1]
GlobalFoundries (formerly IBM) Fab 9 United States USA, VT, Essex Junction 200 90–350 40,000 Foundry, SiGe, RF SOI
(future ON Semiconductor) GlobalFoundries (formerly IBM)[292][293][294] Fab 10 United States USA, NY, East Fishkill 2.5, +.29 (future)[289] 2002 300 90–22, 14 12,000-15,000[289] Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh
SUNY Poly CNSE NanoFab 300 North[295] United States USA, NY, Albany .175, .050 2004, 2005 300 65, 45, 32, 22
SUNY Poly CNSE NanoFab 200[296] United States USA, NY, Albany .016 1997 200
SUNY Poly CNSE NanoFab Central[295] United States USA, NY, Albany .150 2009 300 22
Skorpios Technologies (formerly Novati) (formery ATDF) (formerly SEMATECH) United States USA, TX, Austin[1][297] 0.065 1989[1] 200 10,000 MEMS, photonics, foundry
Opto Diode United States USA, CA, Camarillo[298]
Optek Technology[67] 1968 100, 150 GaAs, LEDs
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR

NORTHERN TELECOM EUROPE[67]) (formerly JDS Uniphase) (formerly Uniphase)

Semiconductor Lasers, Photodiodes
Infinera United States USA, CA[299][300]
Rogue Valley Microdevices United States USA, OR, Medford 2003 150 MEMS foundry
IMT Fab 1 United States USA, CA, Goleta 2000 150, 200 350 20,000 Foundry: MEMS, Photonics, Sensors, Biochips
Sensera uDev-1 United States USA, MA, Woburn 2014 150 700 1,000 MEMS, MicroDevice assembly
Rigetti Computing Fab-1[301][302][303] United States USA, CA, Fremont 130 Quantum Processors
NHanced Semiconductors[304] MNC United States USA, NC, Morrisville 2001 100, 150, 200 >=500 1000 MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging
Polar Semiconductor[305] FAB 1,2,3 United States USA, MN, Bloomington 200 BCD, HV, GMR
Noel Technologies[306] 450–51[307][306] 500–250[308]
Orbit Semiconductor[67] 100 CCD, CMOS
Entrepix United States USA, AZ, Tempe[1] 2003[1]
Medtronic United States USA, AZ, Tempe[1] 1973[1]
Technologies and Devices International United States USA, FL, Silver Springs[1] 2002[1]
Soraa Inc United States USA, CA[309][310]
Soraa Laser Diode[309]
Mirrorcle Technologies United States USA, CA[311]
HTE LABS United States USA, San Jose, CA 0.005 2009 100, 150 4000–1000 1,000 Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
HT Micron Brazil Brazil, São Leopoldo 2014 DRAM, eMCP, iMCP
Unitec do Brasil Brazil Brazil, Ribeirão Neves Planned
Unitec Blue[312] Argentina Argentina, Chascomús 0.3 (1.2 planned)[313] 2013 RFID, SIM, EMV
Everlight Yuan-Li Plant Taiwan Taiwan, Miao-Li LEDs
Everlight Pan-Yu Plant China China LEDs
Everlight Tu-Cheng Plant Taiwan Taiwan, Taipei Country LEDs
Optotech[314] Taiwan Taiwan, Hsinchu LEDs
Arima Optoelectronics Taiwan Taiwan, Hsinchu[1] 1999[1]
Episil Semiconductor Taiwan Taiwan, Hsinchu[1] 1992, 1990, 1988[1]
Episil Semiconductor Taiwan Taiwan, Hsinchu[1] 1992, 1990, 1988[1]
Creative Sensor Inc.[315][316] NanChang Creative Sensor China China, Jiangxi 2007 Image Sensors
Creative Sensor Inc.[315] Wuxi Creative Sensor China China, JiangSu 2002
Creative Sensor Inc.[315] Wuxi Creative Sensor Taiwan Taiwan, Taipei City 1998
Visera Technologies[317] Headquarters Phase I Taiwan Taiwan, Hsinchu Science-based Industrial Park 2007, September CMOS Image Sensors
Panjit Taiwan Taiwan, Kaohsiung[1] 0.1 2003[1]
Nanosystem Fabrication Facility Hong Kong Hong Kong[318]
[319] FAB 1/2 China China, Shanghai 1992, 1997[1] 200 600 78,000[1] BCD, HV
[319] FAB 3 China China, Shanghai 2004[1] 200 250 12,000[1]
[320] China China, Shanghai 150 1200 BiCMOS, CMOS
SiSemi[321] China China, Shenzhen, Longgang High-tech Industrial Park[322] 2004 130 Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi[322] 1997 100 Transistors
CRMicro (formerly CSMC)[323] Fab 1 1998[1] 150[324] 60,000[1] HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC) Fab 2 China China, Wuxi 2008[1] 200[324] 180, 130 40,000[1] HV Analog, Foundry
CRMicro (formerly CSMC) Fab 3 1995[1] 200[324] 130 20,000[1]
CRMicro (formerly CSMC) Fab 5 2005[1] 30,000[1]
Huali (Shanghai Huali Microelectronics Corp, HLMC)[9][325] F1 China China, Shanghai 300 193, 55, 40, 28[326] 35,000 Foundry
Huali[9] F2 China China, Shanghai Under construction 300 40,000
Nexchip[9] N1[327] China China, Hefei Q4 2017 300 40,000 Display Drivers IC[328]
Nexchip[9] N2[327] China China, Hefei Under construction 300 40,000
Nexchip[9] N3[327] China China, Hefei Under construction 300 40,000
Nexchip[9] N4[327] China China, Hefei Under construction 300 40,000
Wandai[9] CQ China China, Chongqing Under construction 300 20,000
San'an Optoelectronics Tianjin San’an Optoelectronics Co., Ltd. China China, Tianjin LEDs
San'an Optoelectronics Xiamen San’an Optoelectronics Technology Co., Ltd. China China LEDs
San'an Optoelectronics Xiamen San’an Integrated Circuit China China ICs
San'an Optoelectronics Xiamen San’an Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Fujian Jing’an Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Wuhu Anrui Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Anrui San'an Optoelectronics Co., Ltd. China China LEDs
San'an Optoelectronics Anrui San'an Technology Co., Ltd. China China LEDs
San'an Optoelectronics Luminus Summary United States USA LEDs
San'an[329] China China, Xiamen Foundry, GaN, Power, RF
[330] FAB China China, Shanghai 300 90 Foundry
HuahongGrace (HHGrace, Huahong Grace, Shanghai Huahong Grace Semiconductor Manufacturing Corporation) China China, Zhangjiang 200 1000–90 53,000 Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HuahongGrace China China, Jinqiao 200 1000–90 53,000 Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HuahongGrace China China, Shanghai 200 1000–90 53,000 Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HuaLei Optoelectronic China China LEDs[331]
Sino King Technology[8] China China, Hefei 2017 DRAM
APT Electronics China China, Guangzhou[1] 2006[1]
Aqualite China China, Guangzhou[1] 2006[1]
Aqualite China China, Wuhan[1] 2008[1]
Xiamen Jaysun Semiconductor Manufacturing Fab 101 China China, Xiamen[1] 0.035 2011[1]
Xiyue Electronics Technology Fab 1 China China, Xian[1] 0.096 2007[1]
Hanking Electronics Fab 1 China China, Fushun 2018 200 10,000 - 30,000 MEMS Foundry,

MEMS Design

MEMS Sensors (Inertial, Pressure, Ultrasound, Piezoelectric, LiDar, Bolometer )

IoT Motion Sensors

CanSemi[332] China China, Guangzhou 4 300 180–130 Foundry[333]
SensFab Singapore Singapore[1] 1995[1]
MIMOS Semiconductor Malaysia Malaysia, Kuala Lumpur[1] 0.006, 0.135 1997, 2002[1]
Silterra Malaysia Fab1 Malaysia Malaysia, Kedah, Kulim 1.6 2000 200 250, 200, 180–90 46,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory 111 Factory North Korea North Korea, Pyongyang 1980s 3000[334]
Kim Il-sung Fab[334] Il-sung North Korea North Korea, Pyongyang 1965s 76 14/22[334][failed verification] 25000–55000 OLEDs, Sensors, DRAM, SRAM, CMOS, Photodiodes, IGBT, MOSFET, MEMS
DongbuHiTek Fab 1 South Korea South Korea, Bucheon[1] 1997[1] Foundry
DongbuHiTek Fab 2 South Korea South Korea, Eumsung-Kun[1] 2001[1] Foundry
DongbuHiTek Fab 2 Module 2 South Korea South Korea, Eumsung-Kun[1] Foundry
Kodenshi AUK Group[335] Silicon FAB Line
Kodenshi AUK Group[335] Compound FAB Line
Kyocera SAW devices[143]
Seiko Instruments[336] China China, Shanghai
Seiko Instruments[336] Japan Japan, Akita
Seiko Instruments[336] Japan Japan, Takatsuka
NIPPON PRECISION CIRCUITS[67] Digital
Epson[337] T wing Japan Japan, Sakata 1997 200 150–350 25,000
Epson[337] S wing Japan Japan, Sakata 1991 150 350–1200 20,000
Olympus Corporation[338] Nagano Japan Japan, Nagano Prefecture MEMS[339]
Olympus Japan Japan MEMS[340]
Shindengen Electric Manufacturing[341] Philippines Philippines, Laguna
Shindengen Electric Manufacturing[341] Thailand Thailand, Lumphun
NKK JFE Holdings[67] 200 6000 ,
New Japan Radio Kawagoe Works Japan Japan, Saitama Prefecture, Fujimino City[342][343] 1959[67] 100, 150 4000, 400, 350 Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[344]

New Japan Radio Saga Electronics[345] Japan Japan, Saga Prefecture 100, 150 4000, 400, 350[346] Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[344]

New Japan Radio NJR FUKUOKA Japan Japan, Fukuoka Prefecture, Fukuoka City[345] 2003[347] 100, 150 Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio Japan Japan, Nagano, Nagano City[348]
New Japan Radio Japan Japan, Nagano, Ueda City[348]
Nichia YOKOHAMA TECHNOLOGY CENTER[349] Japan Japan, KANAGAWA LEDs
Nichia SUWA TECHNOLOGY CENTER[349] Japan Japan, NAGANO LEDs
AKM Semiconductor, Inc. FAB1 Japan Japan, Nobeoka Sensors
AKM Semiconductor, Inc. FAB2 Japan Japan, Nobeoka
AKM Semiconductor, Inc. FAB3 Japan Japan, Fuji Sensors
AKM Semiconductor, Inc. FAB FP Japan Japan, Hyuga
AKM Semiconductor, Inc. FAB5 Japan Japan, Ishinomaki LSI
Taiyo Yuden Japan Japan, Nagano SAW devices[143]
Taiyo Yuden Japan Japan, Ome SAW devices[143]
NMB SEMICONDUCTOR[67] DRAM
Elmos Semiconductor Germany Germany, Dortmund[350] 1984 200 800, 350 9000 HV-CMOS
United Monolithic Semiconductors[351] Germany Germany, Ulm 100 700, 250, 150, 100 Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode
United Monolithic Semiconductors[351] France France, Yvette 100 Foundry, BEOL
Innovative Ion Implant France France 51–300[352]
Innovative Ion Implant United Kingdom UK 51–300[352]
nanoPHAB Netherlands Netherlands, Eindhoven 50–100 10–50 2–10 MEMS
Micron Semiconductor Ltd.[353] Lancing United Kingdom UK, West Sussex, Lancing Detectors
PragmatIC FlexLogIC 001 United Kingdom UK, Co. Durham 2018 200 800–320 Flexible Semiconductor /

Foundry and IDM

United Kingdom UK, England, Newcastle upon Tyne 2014 150 Foundry
CSTG United Kingdom UK, Scotland, Glasgow[1][354] 2003[1] 76, 100 InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry
Photonix United Kingdom UK, Scotland, Glasgow[1] 0.011 2000[1]
Silex Microsystems Sweden Sweden, Järfälla[1] 0.009, 0.032 2003, 2009[1]
Integral Belarus Belarus, Minsk 1963 100, 150, 200 2000, 1500, 350
CNE Russia Russia, Moscow 2015 300 65 4000 MRAM, RRAM, MEMS, IPD, TMR, GMR Sensors, foundry
Mikron Russia Russia, Zelenograd 65–180
WaferFab[355] Russia Russia, Voronezh 1959 100/150 900+ 6000 Analog, power

Number of open fabs currently listed here: 535

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed plants[]

Defunct fabs include:

Company Plant Name Plant Location Plant Cost (in US$ Billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) Technology / Products hideEnded Production
Soviet Union Jupiter Ukrainian Soviet Socialist Republic Ukraine, Kiev, Pripiat 1980 Secret government semiconductor fab closed by Chernobyl disaster 1996
Tower Semiconductor (formerly Micron) Fab 4[356] Japan Japan, Nishiwaki City 0.450[1] 1992[1] 200 95 60,000[1] DRAM, foundry 2014
Tower Semiconductor - Tacoma China China, Nanjing[357][358] halted, bankruptcy in June 2020[359] 200, 300 (planned) Foundry 2020
Fujian Jinhua (JHICC)[9][360][361][362] F2 China China, Jinjiang 5.65[363] 2018 (planned) 300 22 60,000 DRAM[8] 2018
Decoma[9] F2 China China, Huaian Under construction 300 20,000 2020
Wuhan Hongxin Semiconductor Manufacturing ()[364] China China, Wuhan 2019 (halted) 300 14, 7 Foundry 2020
Tsinghua Unigroup - Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[9] SZ China China, Shenzhen 12.5 Planned 300 50,000 DRAM 2019 (just plan)
TSMC Fab 1[211] Taiwan Taiwan, Hsinchu 1987 150 20,000 Foundry March 9, 2001
UMC Fab 1 Japan Japan, Tateyama 0.543[1] 1997[1] 200 40,000 Foundry 2012
SK Hynix E-4 United States USA, OR, Eugene 1.3 2007 200 30,000 DRAM 2008[365]
Symetrix - Panasonic[366] Brazil Brazil 0.9 (planned) planned FeRAM (just plan)
Rohm (formerly Data General) United States USA, CA, Sunnyvale[367]
Kioxia Fab 1 (at Yokkaichi Operations)[368] Japan Japan, Yokkaichi 1992 200 400 35,000 SRAM, DRAM September, 2001
NEC Livingston[369] United Kingdom UK, Scotland, West Lothian, Livingston 4.5 (total) 1981 200 250, 180 30,000 DRAM April 2001
 [de] (formerly Renesas Electronics)[370] Germany Germany, Landshut 1992 200 2011
 [de] (formerly Atmel)[371] France France, Rousset ? 200 25.000[372]
Atmel (formerly Siemens) Fab 9[373] UK United Kingdom, Hadrian Business Park, North Tyneside 1.53[374] 1998[375] DRAM[375] 2007[376]
EI Niš Ei Poluprovodnici Serbia Serbia, Niš 1962 100 2000
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) United Kingdom UK, Swindon[1]
Telefunken Semiconductors [de] Heilbronn, HNO-Line Germany Germany, Heilbronn 0.125[1] 1993[1] 150 10,000 2015
Qimonda Richmond[377] United States USA, VA, Richmond 3 2005 300 65 38,000 DRAM January, 2009
STMicroelectronics (formerly Nortel[67]) 100, 150 NMOS, CMOS
Freescale Semiconductor (formerly Motorola) Toulouse Fab[378] France France, Toulouse 1969 150 Automotive 2012[379]
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) Sendai Fab[380] Japan Japan, Sendai 1987 150, 200 500 DRAM, microcontrollers, analog, sensors 2009?
Agere (formerly Lucent) (formerly AT&T)[381] Spain Spain, Madrid, Tres Cantos 0.67[382] 1987[383] 300, 350, 500 CMOS 2001
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) United States USA, PA, Audubon 1969
1976
1995 		1000 1976
1992[384]
2001
Integrated Device Technology United States USA, CA, Salinas 1985 150 350–800[135] 2002
ON Semiconductor (formerly Cherry Semiconductor) United States USA, RI, Cranston 2004
Intel Fab 8[38] Israel Israel, Jerusalem 1985 150 Microprocessors, Chipsets, Microcontrollers[39] 2007
Intel Fab D2 United States USA, CA, Santa Clara 1989 200 130 8,000 Microprocessors, Chipsets, Flash memory 2009
Intel Fab 17[29][28] United States USA, MA, Hudson 1998 200 130 Chipsets and other[28] 2014
Fairchild Semiconductor (formerly National Semiconductor) West Jordan United States USA, UT, West Jordan 1977 150 2015[385]
Texas Instruments HFAB United States USA, TX, Houston 1967 150 2013[386]
Texas Instruments (formerly Silicon Systems) Santa Cruz United States USA, CA, Santa Cruz 0.250 1980 150 800 80,000 HDD 2001
Texas Instruments (formerly National Semiconductor) Arlington United States USA, TX, Arlington 1985 150 80000, 35000 2010
Unknown (fortune 500 company) United States USA, East Coast[387] 150 1,600 MEMS 2016
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) KFAB United States USA, MO, Lee's Summit 1994[388] 130 2017[389]
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) United States USA, FL, Apopka[44][390] SAW filters 2019
GlobalFoundries Abu Dhabi[1] United Arab Emirates UAE, Abu Dhabi[1] 6.8[1] (planned) 2016[1] (planned) 300 110–180 45,000 Foundry 2011 (plan stopped)
GlobalFoundries - Chengdu China China, Chengdu[391] 10 (planned) 2018 (planned), 2019 (second phase) 300 180/130 (cancelled), 22 (second phase) 20,000 (85,000 planned) Foundry, FDSOI (second phase) 2020 (was idle)

Number of closed fabs currently listed here: 41

See also[]

References[]

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  171. ^ "Newport Wafer Fab power technologies". www.newportwaferfab.co.uk.
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  316. ^ "Factory & Headquarters, Nanchang Creative Sensor Technology". www.jjpan.com.
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  350. ^ "Locations - Elmos Semiconductor AG". www.elmos.com.
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Samsung capacity

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