List of semiconductor fabrication plants
![]() | This list is incomplete; you can help by . (September 2011) |
This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by Pure Play foundries, that manufacture designs from fabless companies and do not design their own ICs. Some Pure Play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.
Glossary of terms[]
- Wafer Size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
- Process Technology Node – size of the smallest features that the facility is capable of etching onto the wafers
- Production Capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month
- Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity
- Technology/Products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market
Open plants[]
Operating fabs include:
Company | Plant Name | Plant Location | Plant Cost (in US$ billions) | Started Production | Wafer Size (mm) | Process Technology Node (nm) | Production Capacity (Wafers/Month) | hideTechnology / Products |
---|---|---|---|---|---|---|---|---|
UMC - He Jian | Fab 8N | ![]() |
0.750,[1] 1.2, +0.5 | 2003, May[1] | 200 | 4000–1000, 500, 350, 250, 180, 110 | 77,000 | Foundry |
UMC | Fab 6A | ![]() |
0.35[1] | 1989[1] | 150 | 450 | 31,000 | Foundry |
UMC | Fab 8AB | ![]() |
1[1] | 1995[1] | 200 | 250 | 67,000[2] | Foundry |
UMC | Fab 8C | ![]() |
1[1] | 1998[1] | 200 | 350–110 | 37,000 | Foundry |
UMC | Fab 8D | ![]() |
1.5[1] | 2000[1] | 200 | 90 | 31,000 | Foundry |
UMC | Fab 8E | ![]() |
0.96[1] | 1998[1] | 200 | 180 | 37,000 | Foundry |
UMC | Fab 8F | ![]() |
1.5[1] | 2000[1] | 200 | 150 | 40,000 | Foundry |
UMC | Fab 8S | ![]() |
0.8[1] | 2004[1] | 200 | 350–250 | 31,000 | Foundry |
UMC | Fab 12A | ![]() |
4.65, 4.1, 6.6, 7.3[1] | 2001, 2010, 2014, 2017[1] | 300 | 28, 14 | 87,000[2] | Foundry |
UMC | Fab 12i | ![]() |
3.7[1] | 2004[1] | 300 | 130–40 | 53,000 | Foundry |
UMC - United Semiconductor | Fab 12X | ![]() |
6.2 | 2016 | 300 | 55–28 | 19,000-25,000 (2021) | Foundry |
UMC - (formerly MIFS) (formerly Fujitsu) | Fab 12M (original Fujitsu installations)[3] | ![]() |
1974 | 150, 200, 300[4] | 90–40 | 33,000 | Foundry | |
Texas Instruments | FFAB | ![]() |
200 | 1000–180 | ||||
Texas Instruments (formerly National Semiconductor) | MFAB[5] | ![]() |
.932 | 1997 | 200 | 350, 250, 180 | ||
Texas Instruments | RFAB | ![]() |
2009 | 300 | 180, 130 | BiCMOS | ||
Texas Instruments | DMOS6 | ![]() |
300 | 130–65, 45 | ||||
Texas Instruments | DMOS5 | ![]() |
200 | 180 | BiCMOS | |||
Texas Instruments | DFAB | ![]() |
1964 | 150/200 | 1000–500 | |||
Texas Instruments | SFAB | ![]() |
150 | 2000–1000 | ||||
Texas Instruments | DHC | ![]() |
2019[6] | Foundry | ||||
Texas Instruments | DBUMP | ![]() |
2018[7] | Foundry | ||||
Texas Instruments | MIHO8 | ![]() |
200 | 350–250 | BiCMOS | |||
Texas Instruments (formerly Spansion) | Aizu | ![]() |
200 | 110 | ||||
Texas Instruments (formerly SMIC - Cension) | Chengdu (CFAB) | ![]() |
200 | |||||
Tsinghua Unigroup[8] | ![]() |
10 (first phase), 30 | Planned | 300 | 100,000 (first phase) | 3D NAND Flash | ||
Tsinghua Unigroup[8] | ![]() |
28 | Planned | 300 | 500,000 | Foundry | ||
Tsinghua Unigroup - XMC (formerly Xinxin)[9] | Fab 1 | ![]() |
1.9 | 2008 | 300 | 90, 65, 60, 50, 45, 40, 32 | 30,000[10] | Foundry, NOR |
Tsinghua Unigroup - Yangtze Memory Technologies (YMTC) - XMC (formerly Xinxin)[9][10][8] | Fab 2 | ![]() |
24 | 2018[1] | 300 | 20 | 200,000 | 3D NAND |
SMIC | S1 Mega Fab (S1A/S1B/S1C)[11] | ![]() |
200 | 350–90 | 114,000[12] | Foundry | ||
SMIC | S2 (Fab 8)[11] | ![]() |
300 | 45/40–32/28 | 20,000[12] | Foundry | ||
SMIC - SMSC | SN1[11] | ![]() |
10 (expected) | (planned) | 300 | 12 / 14 | 70,000[9] | Foundry |
SMIC | B1 Mega Fab (Fab 4, Fab 6)[11] | ![]() |
2004 | 300 | 180–90/55 | 50,000[12] | Foundry | |
SMIC | B2A[11] | ![]() |
3.59[13] | 2014 | 300 | 45/40–32/28 | 35,000[12] | Foundry |
SMIC | Fab 7[11] | ![]() |
2004 | 200 | 350–90 | 50,000[12] | Foundry | |
SMIC | Fab 15[11] | ![]() |
2014 | 200 | 350–90 | 50,000[12] | Foundry | |
SMIC | SZ (Fab 16A/B)[11] | ![]() |
2019 | 300 | / 14 | 40,000[9] | Foundry | |
SMIC[9] | B3 | ![]() |
7.6 | Under construction | 300 | 35,000 | Foundry | |
Wuxi Xichanweixin (formerly SMIC - ) (formerly )(formerly Micron)[14] (formerly Texas Instruments) | LF | ![]() |
1995 | 200 | 180–90 | 50,000 | ||
Nanya | Fab | ![]() |
199x | 300 | DRAM | |||
Nanya | Fab 2 | ![]() |
0.8 | 2000 | 200[15] | 175 | 30,000 | DRAM |
Nanya | Fab 3A[16] | ![]() |
1.85[18] | 2018 | 300 | 20 | DRAM | |
Micron | Fab 1 | ![]() |
1981 | 300 | DRAM | |||
(future Texas Instruments) Micron (formerly IM Flash) | Fab 2 IMFT | ![]() |
300 | 25[19] | 70,000 | DRAM, 3D XPoint | ||
Micron | Fab 4[20] | ![]() |
300 | RnD | ||||
Micron (formerly Dominion Semiconductor) | Fab 6 | ![]() |
1997 | 300 | 25[19] | 70,000 | DRAM, NAND FLASH, NOR | |
Micron (formerly TECH Semiconductor) | Fab 7 (formerly TECH Semiconductor, Singapore)[21] | ![]() |
300 | 60,000 | NAND FLASH | |||
Micron (formerly IM Flash)[22] | Fab 10[23] | ![]() |
3 | 2011 | 300 | 25 | 100,000 | NAND FLASH |
Micron (formerly Inotera) | Fab 11[24] | ![]() |
300 | 20 and under | 80,000 | DRAM | ||
Micron | Fab 13[25] | ![]() |
200 | NOR | ||||
Micron | ![]() |
200 | NOR Flash | |||||
Micron | Micron Semiconductor Asia | ![]() |
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Micron | ![]() |
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Micron (formerly Elpida Memory) | Fab 15 (formerly Elpida Memory, Hiroshima)[20][26] | ![]() |
300 | 20 and under | 100,000 | DRAM | ||
Micron (formerly Rexchip) | Fab 16 (formerly Rexchip, Taichung)[20] | ![]() |
300 | 30 and under | 80,000 | DRAM, FEOL | ||
Micron (formerly Cando) | Micron Memory Taiwan[26] | ![]() |
?, 2018 | 300 | DRAM, BEOL | |||
Micron | A3 | ![]() |
Under construction | 300 | DRAM | |||
Intel | D1B | ![]() |
1996 | 300 | 10 / 14 / 22 | Microprocessors[28] | ||
Intel | D1C[29][28] | ![]() |
2001 | 300 | 10 / 14 / 22 | Microprocessors[28] | ||
Intel | D1D[29][28] | ![]() |
2003 | 300 | 7 / 10 / 14 | Microprocessors[28] | ||
Intel | D1X[30][28] | ![]() |
2013 | 300 | 7 / 10 / 14 | Microprocessors[28] | ||
Intel | Fab 12[29][28] | ![]() |
1996 | 300 | 14 / 22 / 65 | Microprocessors & chipsets[28] | ||
Intel | Fab 32[29][31] | ![]() |
3 | 2007 | 300 | 45 | ||
Intel | Fab 32[29][28] | ![]() |
2007 | 300 | 22 / 32 | Microprocessors[28] | ||
Intel | Fab 42[32][33][28] | ![]() |
10[34] | 2020[35] | 300 | 7 / 10 | Microprocessors[28] | |
Intel | 2, unknown[36][37] | ![]() |
20[36] | 2024[36] | Microprocessors[36] | |||
Intel | Fab 11x[29][28] | ![]() |
2002 | 300 | 32 / 45 | Microprocessors[28] | ||
Intel (formerly Micron) (formerly Numonyx) (formerly Intel) | Fab 18[38] | ![]() |
1996 | 200, 300 | 45 / 65 / 90 / 180 | Microprocessors and chipsets,[39] NOR flash | ||
Intel | Fab 10[29] | ![]() |
1994 | 200 | ||||
Intel | Fab 14[29] | ![]() |
1998 | 200 | ||||
Intel | Fab 24[29][28] | ![]() |
2004 | 300 | 14 / 65 / 90[40] | Microprocessors, Chipsets and Comms[28] | ||
Intel | Fab 28[29][28] | ![]() |
2008 | 300 | 10 / 22 / 45 | Microprocessors[28] | ||
Intel | Fab 68[29][41] | ![]() |
2.5 | 2010 | 300 | 65[42] | 30,000–52,000 | Microprocessors (former), VNAND[28] |
Intel | ![]() |
1997 | 300 | 14 / 22 | Packaging | |||
General Motors Components Holdings | Fab III | ![]() |
125/200 | |||||
Raytheon Systems Ltd | ![]() |
1960 | 100 | CMOS-on-SiC, foundry | ||||
BAE Systems (formerly Sanders) | ![]() |
1985[1] | 100, 150 | 140, 100, 70, 50 | MMIC, GaAs, GaN-on-SiC, foundry | |||
Flir Systems | ![]() |
150 | IR Detectors, Thermal Imaging Sensors | |||||
Teledyne DALSA | Teledyne DALSA Semiconductor | ![]() |
1980 | 150/200 | HV ASICs, HV CMOS, MEMS, CCD | |||
Teledyne e2v | Teledyne e2v | ![]() |
1980 | 150/200 | CCD Fab, CMOS Packaging, III-V, MCT, 6 inch and 8 inch backthinning | |||
Qorvo (formerly RF Micro Devices) | ![]() |
100,150 | 500 | 8,000 | SAW filters, GaAs HBT, GaAs pHEMT, GaN | |||
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor) | ![]() |
0.5 | 1996 | 100, 150, 200 | 350, 250, 150, 90 | 8,000 | DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC | |
Qorvo (formerly TriQuint Semiconductor) | ![]() |
100, 150 | 500 | Power amps, GaAs | ||||
Apple (formerly Maxim) (formerly Samsung) | X3[45] | ![]() |
?, 1997, 2015[46] | 600–90 | ||||
Analog Devices | Limerick | ![]() |
200 | |||||
Analog Devices | Wilmington | ![]() |
200/150 | |||||
Analog Devices (formerly Linear Technology) | Hillview | ![]() |
150 | |||||
Analog Devices (formerly Linear Technology) | Camas | ![]() |
150 | |||||
Maxim | MaxFabNorth[47] | ![]() |
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ISRO | SCL[48] | ![]() |
2006 | 200 | 180 | MEMS, CMOS, CCD, N.S. | ||
[49][50] | MEMS[51] | ![]() |
1996 | 150 | 1000–500 | MEMS | ||
[52][53] | CMOS[54] | ![]() |
1996 | 150 | 1000–500 | CMOS | ||
[55][56] | GaAs[57] | ![]() |
1996 | 150 | 700–500 | MESFET | ||
Tower Semiconductor (formerly Maxim)(formerly Philips)(formerly VLSI) | Fab 9[58][59] | ![]() |
2003 | 200 | 180 | Foundry, Al BEOL, Power, RF Analog | ||
Tower Semiconductor (formerly National Semiconductor) | Fab 1[60] | ![]() |
0.235[1] | 1989, 1986[1] | 150 | 1000–350 | 14,000 | Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete |
Tower Semiconductor | Fab 2[60] | ![]() |
1.226[1] | 2003 | 200 | 180–130 | 51,000[1] | Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS |
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell) | Fab 3,[60] Newport Beach[1] | ![]() |
0.165[1] | 1967, 1995[1] | 200 | 130–500 | 25,000[1] | Foundry, Al BEOL, SiGe, EPI |
Tower Semiconductor – (formerly Panasonic) | Fab 5,[60] Tonami[61] | ![]() |
1994 | 200 | 500–130 | Foundry, Analog/Mixed-Signal,Power,Discrete, NVM, CCD | ||
Tower Semiconductor – (formerly Panasonic) | Fab 7,[60] Uozu[61] | ![]() |
1984 | 300 | 65. 45 | Foundry, CMOS,CIS,RF SOI, Analog/Mixed-Signal | ||
Tower Semiconductor – (formerly Panasonic) | Fab 6,[60] Arai[61] | ![]() |
1976 | 200 | 130–110 | Foundry, Analog/Mixed-Signal,CIS,NVM,Thick Cu RDL | ||
Nuvoton[62] | Fab2 | ![]() |
150 | 350–1000 nm | 45,000[62] | Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor | ||
Nuvoton | Nuvoton Technology Corporation | ![]() |
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Microchip (formerly California Micro Devices) (formerly GTE) | Fab 2 | ![]() |
130, 150, 200 | 5000–350 | ||||
Microchip (formerly Fujitsu) | Fab 4 | ![]() |
2004 | 200 | 500–130 | |||
Microchip (formerly Atmel) | Fab 5 | ![]() |
150 | 1000–250 | ||||
Rohm[63] (formerly Renesas) | Shiga Factory | ![]() |
200 | 150 | IGBT, MOSFET, MEMS | |||
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[63][64] | Miyasaki | ![]() |
150 | MEMS | ||||
Rohm (Lapis Semiconductor)[63] | Building No.1 | ![]() |
1961[65] | Transistors | ||||
Rohm (Lapis Semiconductor)[63] | Building No.2 | ![]() |
1962[65] | Transistors | ||||
Rohm (Lapis Semiconductor)[63] | Building No.3 | ![]() |
1962[65] | Transistors | ||||
Rohm (Lapis Semiconductor)[63] | Building No.4 | ![]() |
1969[65] | Transistors | ||||
Rohm (Lapis Semiconductor)[63] | Chichibu Plant | ![]() |
1975[65] | DRAM | ||||
Rohm (Lapis Semiconductor)[63] | VLSI Laboratory No. 1 | ![]() |
1977[65] | VLSI | ||||
Rohm (Lapis Semiconductor)[63] | VLSI Laboratory No. 2 | ![]() |
1983[65] | |||||
Rohm (Lapis Semiconductor)[63] | VLSI Laboratory No. 3 | ![]() |
1983[65] | DRAM | ||||
Rohm (Lapis Semiconductor)[63] | Oregon Plant | ![]() |
1990[65] | |||||
Rohm (Lapis Semiconductor)[63] | ![]() |
1992[65] | ||||||
Rohm (Lapis Semiconductor)[63] | ULSI Laboratory No. 1 | ![]() |
1992[65] | 500 | DRAM | |||
Rohm (Kionix)[66] | Ithaca | ![]() |
150 | MEMS | ||||
Rohm (Kionix)[66] (formerly ) | Kyoto | ![]() |
200 | MEMS | ||||
Oki Electric Industry[67] | ![]() |
1961 | 100, 150, 130, 76 | 7,200 | Bipolar, Mask ROM | |||
Oki Electric Industry[67] | Miyazaki Oki Electric Co | 1981 | 100, 150, 130, 76 | 3000 | 7,200 | Bipolar, Mask ROM, DRAM[65] | ||
Oki Electric Industry[67] | Miyagi Facility | 1988[65] | 100, 150, 130, 76 | 7,200 | Bipolar, Mask ROM | |||
Oki Electric Industry[67] | Hachioji Facility | 100, 150, 130, 76 | 7,200 | Bipolar, Mask ROM | ||||
Oki Electric Industry[68] | 150 | 180–150 | SoCs, LSI, Logic, Memory | |||||
Fuji Electric[69] | Omachi | ![]() |
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Fuji Electric[70] | Iyama | ![]() |
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Fuji Electric[71] | Hokuriku | ![]() |
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Fuji Electric[72] | Matsumoto | ![]() |
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Fujitsu | Kawasaki | ![]() |
1966[73] | |||||
Fujitsu[74][75] | Fab B1 (at Mie)[76] | ![]() |
2005 | 300 | 65, 90 | 15,000 | Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs | |
Fujitsu[74][75] | Fab B2 (at Mie)[76] | ![]() |
1 (total)[78] | 2007, July | 300 | 65, 90 | 25,000 | Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[79] |
Fujitsu[74][75] | ![]() |
2015 | 300 | 40[80] | 5,000 | Foundry | ||
Fujitsu | Kumagaya Plant[76] | ![]() |
1974 | |||||
Fujitsu[81] | Suzaka Plant | ![]() |
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Fujitsu | Iwate Plant[82][4] | ![]() |
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Denso (formerly Fujitsu)[83] | Denso Iwate[84][85][86] | ![]() |
0.088 | Under construction, 2019, May (planned) | Semiconductor wafers and sensors (since June 2017) | |||
Canon Inc. | Oita[87] | ![]() |
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Canon Inc. | Kanagawa[88] | ![]() |
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Canon Inc. | Ayase[87] | ![]() |
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Sharp Corporation | Fukuyama[89] | ![]() |
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Japan Semiconductor | Iwate | ![]() |
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Japan Semiconductor[90] | Oita | ![]() |
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Kioxia | Yokkaichi Operations[91][92] | ![]() |
1992 | 173,334[93][94][95][96] | Flash Memory | |||
Kioxia/SanDisk | Fab 5 Phase 1 (at Yokkaichi Operations) | ![]() |
2011 | Flash | ||||
Kioxia/SanDisk | Fab 5 Phase 2[97] (at Yokkaichi Operations) | ![]() |
2011 | 300 | 15[98] | Flash | ||
Kioxia[99] | Fab 3 (at Yokkaichi Operations) | ![]() |
NAND Memory | |||||
Kioxia[100] | Fab 4 (at Yokkaichi Operations) | ![]() |
2007 | NAND Memory | ||||
Kioxia[101] | Kaga Toshiba | ![]() |
Power semiconductor devices | |||||
Kioxia[102] | Oita Operations | ![]() |
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Kioxia[103][104] | Fab 6 (phase 1) (at Yokkaichi Operations)[105] | ![]() |
1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[106][92] | 2018 | BiCS FLASH™ | |||
Kioxia[103][104] | Fab 6 (phase 2) (at Yokkaichi Operations) | ![]() |
1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[106][92] | Planned | BiCS FLASH™ | |||
Kioxia[103][104] | ![]() |
4.6[107][108] | Planned | BiCS FLASH™ | ||||
Kioxia[103] | Fab 2 (at Yokkaichi Operations) | ![]() |
1995 | 3D NAND | ||||
Kioxia[109][110] | New Fab 2 (at Yokkaichi Operations) | ![]() |
2016, July 15 | 3D NAND | ||||
Kioxia[111][112][113][114] | ![]() |
Under Construction | 3D NAND | |||||
Western Digital[115][116] | ||||||||
Hitachi[117] | Rinkai Factory | ![]() |
MEMS Foundry | |||||
Hitachi[117] | Haramachi Factory | ![]() |
Power semiconductors | |||||
Hitachi[117] | Yamanashi Factory | ![]() |
Power semiconductors | |||||
ABB[118] | Lenzburg | ![]() |
0.140 | 2010 (second phase) | 130, 150 | 18,750 (225,000 per year) | High power semiconductors, diodes, IGBT, BiMOS | |
ABB[118] | ![]() |
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Mitsubishi Electric[119] | Power Device Works, Kunamoto Site | ![]() |
Power semiconductors | |||||
Mitsubishi Electric[119] | Power Device Works, Fukuoka Site | ![]() |
Power semiconductors and sensors[120] | |||||
Mitsubishi Electric[121] | High frequency optical device manufacturing plant | ![]() |
High frequency semiconductor devices (GaAsFET, GaN, MMIC)[121] | |||||
Powerchip Semiconductor | Memory Foundry, Fab P1[122][123] | ![]() |
2.24[1] | 2002[1] | 300 | 90, , 22[124] | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC |
Powerchip Semiconductor | Fab P2[123] | ![]() |
1.86[1] | 2005[1] | 300 | 90, , 22[124] | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC |
Powerchip Semiconductor (formerly Macronix) | Fab P3[123] | ![]() |
300 | 90, , 22[124] | 20,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | ||
SPIL (formerly ) | ProMOS Fab 4[125][126] | ![]() |
1.6 | 300 | 70 | |||
Macronix (formerly )[127] | Fab 5 | 300 | 50,000 | |||||
Macronix[127] | Fab 2 | 200 | 48,000 | |||||
(future Foxconn) Macronix[127] | Fab 1 | 150 | 40,000 | |||||
Renesas[128] | Naka Factory | ![]() |
2009 | 300 | 28[129] | |||
Renesas (formerly Trecenti) | ![]() |
300 | 180, 90, 65 | Foundry | ||||
Renesas[128] | Takasaki Factory | ![]() |
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Renesas[128] | Shiga Factory | ![]() |
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Renesas[128] | Yamaguchi Factory | ![]() |
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Renesas[128] | Kawashiri Factory | ![]() |
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Renesas[128] | Saijo Factory | ![]() |
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Renesas[128] | Musashi Site | ![]() |
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Renesas (formerly NEC Electronics) (formerly NEC) | Roseville[132][133] | ![]() |
1.2[134] | 2002, April | 200 | RAM, SoCs, Multimedia Chips | ||
Renesas-Intersil[128] | 1 Murphy Ranch Rd | ![]() |
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Integrated Device Technology | ![]() |
1997 | 200 | 140–100[135] | ||||
NEC[67] | 100, 130, 150 | SRAM, DRAM | ||||||
NEC[136] | ![]() |
DRAM | ||||||
TSI Semiconductors[137] (formerly Renesas) | Roseville fab, M-Line, TD-Line, K-Line[138][1] | ![]() |
1992, 1985[1] | 200 | ||||
TDK - Micronas | FREIBURG[139][140] | ![]() |
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TDK (formerly Renesas) | Tsuruoka Higashi[141][142] | 125[143] | ||||||
TDK | ![]() |
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TDK - Tronics | ![]() |
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Silanna (formerly Sapphicon Semiconductor) | ![]() |
0.030 | 1965,1989[1] | 150 | ||||
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology) | ![]() |
150 | 500, 250 | RF CMOS, SOS, foundry | ||||
Murata Manufacturing[147] | Nagano[143] | ![]() |
0.100 | SAW filters[143] | ||||
Murata Manufacturing[147] | Otsuki[143] | ![]() |
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Murata Manufacturing[147] | Kanazawa | ![]() |
0.111 | SAW filters[143] | ||||
Murata Manufacturing (formerly Fujifilm)[148][149] | Sendai | ![]() |
0.092[143] | MEMS[150] | ||||
Murata Manufacturing[148] | Yamanashi | ![]() |
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Murata Manufacturing[151] | Yasu | ![]() |
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Mitsumi Electric[152] | Semiconductor Works #3 | ![]() |
2000 | |||||
Mitsumi Electric[152] | ![]() |
1979 | ||||||
Sony[153] | Kagoshima Technology Center | ![]() |
1973 | Bipolar CCD, MOS, MMIC, SXRD | ||||
Sony[153] | Oita Technology Center | ![]() |
2016 | CMOS Image Sensor | ||||
Sony[153] | Nagasaki Technology Center | ![]() |
1987 | MOS LSI, CMOS Image Sensors, SXRD | ||||
Sony[153] | Kumamoto Technology Center | ![]() |
2001 | CCD Imgage Sensors, H-LCD, SXRD | ||||
Sony[153] | Shiroishi Zao Technology Center | ![]() |
1969 | Semiconductor Lasers | ||||
Sony | Sony Shiroishi Semiconductor Inc. | ![]() |
Semiconductor Lasers[154] | |||||
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[153][155][156] | Yamagata Technology Center | ![]() |
2014 | CMOS Image Sensor, eDRAM (formerly) | ||||
F-5[157] | 2005 | 200 | 130 | |||||
SK Hynix[158] | ![]() |
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SK Hynix[158] | ![]() |
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SK Hynix[159][160] | ![]() |
Under construction[161] | NAND Flash | |||||
SK Hynix[160] | ![]() |
Under construction | NAND Flash | |||||
SK Hynix | M8 | ![]() |
200 | Foundry | ||||
SK Hynix | M10 | ![]() |
300 | DRAM | ||||
SK Hynix | M11 | ![]() |
300 | NAND Flash | ||||
SK Hynix | M12 | ![]() |
300 | NAND Flash | ||||
SK Hynix | HC1 | ![]() |
300 | 100,000[9] | DRAM | |||
SK Hynix | HC2 | ![]() |
300 | 70,000[9] | DRAM | |||
SK Hynix | M14 | ![]() |
300 | DRAM, NAND Flash | ||||
SK Hynix[160] | M16 | ![]() |
3.13 (13.4 total planned) | 2021 (planned) | 300 | 10 (EUV) | 15,000-20,000 (initial) | DRAM |
LG Innotek[162] | Paju | ![]() |
LED Epi-wafer, Chip, Package | |||||
Diodes Incorporated[163] (formerly Zetex Semiconductors) | OFAB | ![]() |
150 | |||||
Diodes Incorporated (formerly BCD Semi)[164] | ![]() |
150 | 4000–1000 | |||||
Diodes Incorporated (formerly Texas Instruments) | GFAB | ![]() |
150/200 | 40,000 | ||||
Lite-On Optoelectronics[165] | ![]() |
|||||||
Lite-On Optoelectronics[165] | ![]() |
|||||||
Lite-On Optoelectronics[165] | ![]() |
|||||||
Lite-On Semiconductor[166] | Keelung Plant | ![]() |
1990 | 100 | Thyristor, DIscrete | |||
Lite-On Semiconductor[166] | Hsinchu Plant | ![]() |
2005 | Bipolar BCD, CMOS | ||||
Lite-On Semiconductor[166] | Lite-On Semi (Wuxi) | ![]() |
2004 | 100 | Discrete | |||
Lite-On Semiconductor[166] | Wuxi WMEC Plant | ![]() |
2005 | Discrete, Power, Optical ICs | ||||
Lite-On Semiconductor[166] | Shanghai (SSEC) Plant | ![]() |
1993 | 76 | Fab, Assembly | |||
Trumpf[167] (formerly Philips Photonics) | ![]() |
VCSEL | ||||||
Philips[168] | ![]() |
200,150 | 30,000 | R&D, MEMS | ||||
NEWPORT WAFER FAB[169] (formerly Infineon Technologies) | FAB11 | ![]() |
200[170] | 180–700[170] | 32,000[170] | Foundry, Compound Semiconductors, IC, MOSFET, IGBT[171] | ||
Nexperia (formerly NXP Semiconductors) (formerly Philips) | Hamburg site[172] | ![]() |
1953 | 200 | 35,000 | Small-signal and bipolar discrete devices | ||
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard) | Manchester[172] | ![]() |
1987? | 150, 200 | 24,000 | GaN FETs, TrenchMOS MOSFETs | ||
NXP Semiconductors (formerly Philips) | ICN8 | ![]() |
200 | 40,000+[173] | SiGe | |||
NXP Semiconductors | ![]() |
Bipolar, Mos, Analog, Digital, Transistors, Diodes | ||||||
NXP Semiconductors - SSMC | SSMC | ![]() |
1.7[1] | 2001[1] | 200 | 120 | 53,000 | SiGe |
NXP Semiconductors - Jilin Semiconductor | ![]() |
130 | ||||||
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | Oak Hill Fab[174] | ![]() |
.8[175] | 1991 | 200 | 250 | ||
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | Chandler Fab[176] | ![]() |
1.1[178] +0.1 (GaN) | 1993 | 150 (GaN), 200 | 180 | GaN-on-SiC pHEMT | |
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | ATMC[179] | ![]() |
1995 | 200 | 90 | |||
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) | MOTOFAB1[180] | ![]() |
2002 | |||||
AWSC | ![]() |
1999[1] | 150 | 12,000 | Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP | |||
Skyworks Solutions[181] (formerly Conexant) (formerly Rockwell) | ![]() |
100, 150 | Compound Semiconductors (GaAs, AlGaAs, InGaP) | |||||
Skyworks Solutions[181] (formerly Alpha Industries) | ![]() |
100, 150 | RF/cellular components (SiGe, GaAs) | |||||
Skyworks Solutions[181] | ![]() |
SAW, TC-SAW Filters | ||||||
Skyworks Solutions[181] | ![]() |
SAW, TC-SAW Filters | ||||||
Skyworks Solutions[181] | ![]() |
SAW, TC-SAW Filters | ||||||
Win Semiconductor | Fab A[182] | ![]() |
150[183] | 2000–10 | Foundry, GaAs | |||
Win Semiconductor | Fab B[182] | ![]() |
150[183] | 2000–10 | Foundry, GaAs, GaN | |||
Win Semiconductor | Fab C | ![]() |
0.050, 0.178 | 2000, 2009[1] | 150 | Foundry, GaAs | ||
ON Semiconductor (formerly Motorola) | ISMF | ![]() |
150 | 350 | 80,000 | Discrete | ||
ON Semiconductor (formerly Truesense Imaging, Kodak) | Rochester | ![]() |
CCDs and Image Sensors | |||||
ON Semiconductor (formerly LSI) | Gresham[185] | ![]() |
200 | 110 | ||||
ON Semiconductor (formerly TESLA) | Roznov | ![]() |
150 | |||||
ON Semiconductor (formerly AMI Semiconductor) | Pocatello[186] | ![]() |
200 | 350 | ||||
ON Semiconductor (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec) | Oudenaarde | ![]() |
150 | 350 | 4,000 | |||
ON Semiconductor (formerly Sanyo)[187][188] | Niigata | ![]() |
130, 150 | 350 | ||||
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) | ![]() |
1960/1997 | 200 | 350 | ||||
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor) | ![]() |
1960/1997 | 200 | 350 | ||||
ON Semiconductor (formerly Fujitsu)[189][190] | Aizu Wakamatsu Plant[191] | ![]() |
1970[73] | 150, 200[192][193][194][195] | Memory, Logic | |||
ams[196] | FAB B | ![]() |
200 | 350 | ||||
Osram (Osram Opto Semiconductors) | ![]() |
0.350, 1.18[197] | 2017, 2020 (second phase, planned)[198][199] | 150 | LEDs | |||
Osram (Osram Opto Semiconductors) | ![]() |
2009 | 100 | LEDs | ||||
Osram (Osram Opto Semiconductors) | ![]() |
2003, 2005 (second phase)[203] | LEDs | |||||
Winbond | Memory Product Foundry[204] | ![]() |
300 | 46 | ||||
Winbond | CTSP Site[205][206] | ![]() |
300 | |||||
Winbond[207] | Planned | 300 | ||||||
Vanguard International Semiconductor | Fab 1 | ![]() |
0.997[1] | 1994[1] | 200 | 55,000 | Foundry | |
Vanguard International Semiconductor (formerly Winbond) | Fab 2 (formerly Fab 4&5)[208] | ![]() |
0.965[1] | 1998[1] | 200 | 55,000 | Foundry | |
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered) | Fab 3E[209] | ![]() |
1.3[1] | 200 | 180 | 34,000 | Foundry | |
TSMC | Fab 2[210] | ![]() |
0.735[1] | 1990[1] | 150 | 88,000[211][1] | Foundry | |
TSMC | Fab 3 | ![]() |
2[1] | 1995[1] | 200 | 100,000[1] | Foundry | |
TSMC | Fab 5 | ![]() |
1.4[1] | 1997[1] | 200 | 48,000[1] | Foundry | |
TSMC | Fab 6 | ![]() |
2.1[1] | 2000, January; 2001[130] | 200, 300 | 180–? | 99,000[1] | Foundry |
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[212][213][214] | Fab 7[215] | ![]() |
200 | 350, 250, 220, 180 | 33,000 | Foundry (current)
DRAM (former), Logic (former) | ||
TSMC (formerly WSMC) | Fab 8 | ![]() |
1.6[1] | 1998[1] | 200 | 250, 180 | 85,000[1] | Foundry |
TSMC (formerly WSMC)[131] | 2000 | 200 | 250, 150 | 30,000 | Foundry | |||
TSMC China Company | Fab 10 | ![]() |
1.3[1] | 2004[1] | 200 | 74,000 | Foundry | |
TSMC WaferTech | Fab 11 | ![]() |
1.2 | 1998 | 200 | 350, 250, 180, 160 | 33,000 | Foundry |
TSMC | Fab 12 | ![]() |
5.2, 21.6 (total, all phases combined)[1] | 2001[1] | 300 | 150–28 | 77,500–123,800 (all phases combined)[1] | Foundry |
TSMC | Fab 12A | ![]() |
300 | 25,000 | Foundry | |||
TSMC | Fab 12B | ![]() |
300 | 25,000 | Foundry | |||
TSMC | Fab 12 (P4) | ![]() |
6[1] | 2009[1] | 300 | 20 | 40,000[1] | Foundry |
TSMC | Fab 12 (P5) | ![]() |
3.6[1] | 2011[1] | 300 | 20 | 6,800[1] | Foundry |
TSMC | Fab 12 (P6) | ![]() |
4.2[1] | 2013[1] | 300 | 16 | 25,000 | Foundry |
TSMC | Fab 12 (P7) | ![]() |
300 | 16 | Foundry | |||
TSMC | Fab 14 | ![]() |
5.1[1] | 2002,[130] 2004[1] | 300 | 20 | 82,500[1] | Foundry |
TSMC | Fab 14 (B) | ![]() |
300 | 16 | 50,000+[216] | Foundry | ||
TSMC | Fab 14 (P3)[1] | ![]() |
3.1[1] | 2008[1] | 300 | 16 | 55,000[1] | Foundry |
TSMC | Fab 14 (P4)[1] | ![]() |
3.750[1] | 2011[1] | 300 | 16 | 45,500[1] | Foundry |
TSMC | Fab 14 (P5)[1] | ![]() |
3.650[1] | 2013[1] | 300 | 16 | Foundry | |
TSMC | Fab 14 (P6)[1] | ![]() |
4.2[1] | 2014[1] | 300 | 16 | Foundry | |
TSMC | Fab 14 (P7)[1] | ![]() |
4.850[1] | 2015[1] | 300 | 16 | Foundry | |
TSMC | Fab 15[217] | ![]() |
9.3 | 2011 | 300 | 20 | 100,000+(166,000 estimate)[218][216][219] | Foundry |
TSMC | Fab 15 (B) | ![]() |
300 | Foundry | ||||
TSMC | Fab 15 (P1)[1] | ![]() |
3.125[1] | 2011 | 300 | 4,000[1] | Foundry | |
TSMC | Fab 15 (P2)[1] | ![]() |
3.150[1] | 2012[1] | 300 | Foundry | ||
TSMC | Fab 15 (P3)[1] | ![]() |
3.750[1] | 2013[1] | 300 | Foundry | ||
TSMC | Fab 15 (P4)[1] | ![]() |
3.800[1] | 2014[1] | 300 | Foundry | ||
TSMC | Fab 15 (P5)[1] | ![]() |
9.020[1] | 2016[1] | 300 | 35,000 | Foundry | |
TSMC | Fab 15 (P6 & P7) | ![]() |
2019 | 300 | Foundry | |||
TSMC Nanjing Company | Fab 16 | ![]() |
2018 | 300 | 20,000 | Foundry | ||
TSMC | Fab 18 (P1-P3) | ![]() |
17.08 | 2020 (P7 under construction) | 300 | 5[222] | 120,000 | Foundry |
TSMC | Fab 18 (P4-P6) | ![]() |
2022 (planned), under construction | 300 | 3[9][223][224] | 120,000 | Foundry | |
TSMC | Fab 20 (P1-P4) | ![]() |
2024-2025 (planned) | 300 | 2 | Foundry | ||
TSMC | Fab 21 | ![]() |
12[225] | 2024 (planned), P1 under construction[225] | 300 | 5 | 20,000 | Foundry |
Epistar | Fab F1[226] | ![]() |
LEDs | |||||
Epistar | Fab A1[226] | ![]() |
LEDs | |||||
Epistar | Fab N2[226] | ![]() |
LEDs | |||||
Epistar | Fab N8[226] | ![]() |
LEDs | |||||
Epistar | Fab N1[226] | ![]() |
LEDs | |||||
Epistar | Fab N3[226] | ![]() |
LEDs | |||||
Epistar | Fab N6[226] | ![]() |
LEDs | |||||
Epistar | Fab N9[226] | ![]() |
LEDs | |||||
Epistar | Fab H1[226] | ![]() |
LEDs | |||||
Epistar | Fab S1[226] | ![]() |
LEDs | |||||
Epistar | Fab S3[226] | ![]() |
LEDs | |||||
Epistar (formerly TSMC)[227][228][229] | ![]() |
0.080 | 2011, second half | LEDs | ||||
Lextar | T01 | ![]() |
LEDs | |||||
GCS | ![]() |
1999[1] | 100 | 6,400 | Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs | |||
Bosch | ![]() |
1995[230] | 150 | ASIC, analog, power, SiC | ||||
Bosch | ![]() |
1.0[231] | 2021 | 300 | 65 | |||
Bosch | WaferFab | ![]() |
0.708[232] | 2010[230] | 200 | 30,000 | ASIC, analog, power, MEMS | |
STMicroelectronics | AMK8 (second, newer fab) | ![]() |
1995 | 200 | ||||
STMicroelectronics (formerly SGS Microelettronica) | AMJ9 (first fab) | ![]() |
1984[233] | 150, 200 | 6” 14 kpcs/day, 8” 1.4 kpcs/day | Power-MOS/ IGBT/ bipolar/ CMOS | ||
STMicroelectronics | Crolles 1 / Crolles 200 | ![]() |
1993 | 200 | 25,000 | |||
STMicroelectronics | Crolles2 / Crolles 300 | ![]() |
2003 | 300 | 90, 65, 45, 32, 28 | 20,000 | FDSOI | |
STMicroelectronics | Tours | ![]() |
200 | 500 | 8": 9kpcs/W; 12" 400–1000/W | ASIC | ||
STMicroelectronics (formerly SGS-ATES) | R2 (upgraded in 2001 from R1) | ![]() |
1963 | 200 | ||||
STMicroelectronics (formerly SGS-ATES) | AG8/AGM | ![]() |
1963 | 200 | ||||
STMicroelectronics | Catania | ![]() |
1997 | 150 (GaN), 200 | GaN | |||
STMicroelectronics | Rousset | ![]() |
2000 | 200 | ||||
X-Fab | Erfurt | ![]() |
1985[1] | 200[234] | 600–1000[234] | 11200–[234] | Foundry | |
X-Fab (formerly ZMD) | Dresden | ![]() |
0.095[1] | 1985[1] | 200[235] | 350–1000[235] | 6000–[235] | Foundry, CMOS, GaN-on-Si |
X-Fab (formerly Itzehoe) | Itzehoe | ![]() |
200[236] | 13000–[236] | Foundry, MEMS | |||
X-Fab (formerly 1st Silicon)[237][238] | Kuching | ![]() |
1.89[1] | 2000[1] | 200[239] | 130–350[239] | 30,000–[239] | Foundry |
X-Fab (formerly Texas Instruments) | Lubbock | ![]() |
0.197[1] | 1977[1] | 150, 200[240] | 600–1000[240] | 15000–[240] | Foundry, SiC |
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[241] | ACL-AMF | ![]() |
1991, 1964[1] | 200 | 130–350 | Foundry, CMOS, RF SOI | ||
CEITEC | ![]() |
2010 | 200 | 600–1000 | RFID | |||
IXYS | ![]() |
IGBT[242] | ||||||
IXYS | ![]() |
|||||||
IXYS | ![]() |
|||||||
IXYS | ![]() |
|||||||
Samsung | V1-Line[243] | ![]() |
6 | 2020, February 20 | 300 | 7 | Microprocessors, Foundry | |
Samsung | S3-Line[244] | ![]() |
10.2, 16.2 (planned)[245][246] | 300 | 10 | 200,000 | DRAM, VNAND, Foundry | |
Samsung | S2-Line[247] | ![]() |
16[248][249] | 2011 | 300 | 65–11 | 92,000 | Microprocessors, FDSOI, Foundry, NAND[250] |
Samsung | S1-Line[251] | ![]() |
33 (total) | 2005 (second phase), 1983 (first phase)[252][253] | 300 | 65–7 | 62,000 | Microprocessors, S.LSI, LEDs, FDSOI, Foundry[254] |
Samsung | Pyeongtaek[255][256][245] | ![]() |
14.7, 27 (total)[257][249][258][259][260][261][262][161] | 2017, July 6 | 300 | 14 | 450,000[263] | V-NAND, DRAM, Foundry |
Samsung | 6 Line[264] | ![]() |
200 | 180–65 | Foundry | |||
Samsung | Samsung China Semiconductor[265] | ![]() |
DDR Memory | |||||
Samsung | Samsung Suzhou Research Center (SSCR)[251] | ![]() |
DDR Memory | |||||
Samsung | Onyang Complex[265] | ![]() |
display.backend process.test | |||||
Samsung | F1x1[266][245] | ![]() |
2.3[267] | 2014 (first phase, second phase is under review)[245] | 300 | 20 | 100,000 | VNAND |
Samsung | Giheung Campus[268] | ![]() |
LEDs | |||||
Samsung | Hwasung Campus[268] | ![]() |
LEDs | |||||
Samsung | Tianjin Samsung LED Co., Ltd.[268] | ![]() |
LEDs | |||||
Seagate | ![]() |
|||||||
Seagate | ![]() |
|||||||
Broadcom Limited | ![]() |
|||||||
Cree Inc.[275] | Durham | ![]() |
Compound Semiconductors, LEDs | |||||
Cree Inc.[276] | Research Triangle Park | ![]() |
GaN HEMT RF ICs | |||||
SMART Modular Technologies | ![]() |
2006 | Packaging | |||||
Changxin Memory Technologies | ![]() |
7.2 | 2019 | 300 | 19, 17 | 125,000 | DRAM[277] | |
Infineon Technologies | Villach | ![]() |
1970[278] | 100/150/200/300 | MEMS, SiC, GaN | |||
Infineon Technologies | Dresden | ![]() |
3[279] | 1994/2011[280] | 200/300 | 90 | ||
Infineon Technologies | Kulim[281] | ![]() |
2006[282] | 200/300 | 50,000 | |||
Infineon Technologies | Kulim 2 | ![]() |
2015 | 200/300 | 50,000 | |||
Infineon Technologies | Regensburg[283] | ![]() |
1959 | |||||
Infineon Technologies | Cegled[284] | ![]() |
||||||
Infineon Technologies | Cheonan | ![]() |
||||||
Infineon Technologies | El Segundo | ![]() |
||||||
Infineon Technologies | Batam | ![]() |
||||||
Infineon Technologies | Leominster | ![]() |
||||||
Infineon Technologies | Malacca | ![]() |
||||||
Infineon Technologies | Mesa | ![]() |
||||||
Infineon Technologies | Morgan Hill | ![]() |
||||||
Infineon Technologies | Morrisville | ![]() |
||||||
Infineon Technologies | Neubiberg | ![]() |
||||||
Infineon Technologies | San Jose | ![]() |
||||||
Infineon Technologies | ![]() |
|||||||
Infineon Technologies | Temecula | ![]() |
||||||
Infineon Technologies | Tijuana | ![]() |
||||||
Infineon Technologies | Warstein | ![]() |
||||||
Infineon Technologies | Wuxi | ![]() |
||||||
Infineon Technologies - Cypress Semiconductor | Fab25 | ![]() |
1994 | 200 | Flash / Logic | |||
SkyWater Technology (formerly Cypress Semiconductor) (formerly Control Data) (formerly VTC) | Minnesota fab | ![]() |
1991 | 200 | 65, 90, 130, 180, 250, 350 | Foundry, SOI, FDSOI, MEMS, SiPh, CNT, 3D packaging, superconducting ICs | ||
D-Wave Systems[286] | Superconducting Foundry[287] | Quantum Processing Units (QPUs)[287] | ||||||
GlobalFoundries (formerly AMD) | Fab 1 Module 1[288] | ![]() |
3.6[1] | 2005 | 300 | 22–45 | 35,000[1] | Foundry, SOI, FDSOI |
GlobalFoundries (formerly AMD) | Fab 1 Module 2 | ![]() |
4.9[1] | 1999 | 300 | 22–45 | 25,000[1] | Foundry, SOI |
GlobalFoundries | Fab 1 Module 3 | ![]() |
2.3[1] | 2011[1] | 300 | 22–45 | 6,000[1] | Foundry, SOI |
GlobalFoundries (formerly Chartered) | Fab 2[209] | ![]() |
1.3[1] | 1995[1] | 200 | 350–600 | 56,000[1] | Foundry, SOI |
GlobalFoundries (formerly Chartered) | Fab 3/5[209] | ![]() |
0.915, 1.2[1] | 1997, 1995[1] | 200 | 180–350 | 54,000 | Foundry, SOI |
GlobalFoundries (formerly Chartered) | Fab 6[209] (merged into Fab 7) | ![]() |
1.4[1] | 2000[1] | 200, 300 (merged) | 110–180 | 45,000 | Foundry, SOI |
GlobalFoundries (formerly Chartered) | Fab 7[288] | ![]() |
4.6[1] | 2005[1] | 300 | 40, 65, 90, 110, 130 | 50,000 | Foundry, Bulk CMOS, RF SOI |
GlobalFoundries | Fab 8[288] | ![]() |
4.6, 2.1, 13+ (total)[289][290] | 2012, 2014[1] | 300 | 12 / 14 / 22 / 28 | 60,000 | Foundry, High-K Metal Gate,[291] SOI FinFET |
GlobalFoundries | Technology Development Center[1] | ![]() |
1.5[1] | 2014[1] | ||||
GlobalFoundries (formerly IBM) | Fab 9 | ![]() |
200 | 90–350 | 40,000 | Foundry, SiGe, RF SOI | ||
(future ON Semiconductor) GlobalFoundries (formerly IBM)[292][293][294] | Fab 10 | ![]() |
2.5, +.29 (future)[289] | 2002 | 300 | 90–22, 14 | 12,000-15,000[289] | Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh |
SUNY Poly CNSE | NanoFab 300 North[295] | ![]() |
.175, .050 | 2004, 2005 | 300 | 65, 45, 32, 22 | ||
SUNY Poly CNSE | NanoFab 200[296] | ![]() |
.016 | 1997 | 200 | |||
SUNY Poly CNSE | NanoFab Central[295] | ![]() |
.150 | 2009 | 300 | 22 | ||
Skorpios Technologies (formerly Novati) (formery ATDF) (formerly SEMATECH) | ![]() |
0.065 | 1989[1] | 200 | 10,000 | MEMS, photonics, foundry | ||
Opto Diode | ![]() |
|||||||
Optek Technology[67] | 1968 | 100, 150 | GaAs, LEDs | |||||
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR
NORTHERN TELECOM EUROPE[67]) (formerly JDS Uniphase) (formerly Uniphase) |
Semiconductor Lasers, Photodiodes | |||||||
Infinera | ![]() |
|||||||
Rogue Valley Microdevices | ![]() |
2003 | 150 | MEMS foundry | ||||
IMT | Fab 1 | ![]() |
2000 | 150, 200 | 350 | 20,000 | Foundry: MEMS, Photonics, Sensors, Biochips | |
Sensera | uDev-1 | ![]() |
2014 | 150 | 700 | 1,000 | MEMS, MicroDevice assembly | |
Rigetti Computing | Fab-1[301][302][303] | ![]() |
130 | Quantum Processors | ||||
NHanced Semiconductors[304] | MNC | ![]() |
2001 | 100, 150, 200 | >=500 | 1000 | MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging | |
Polar Semiconductor[305] | FAB 1,2,3 | ![]() |
200 | BCD, HV, GMR | ||||
Noel Technologies[306] | 450–51[307][306] | 500–250[308] | ||||||
Orbit Semiconductor[67] | 100 | CCD, CMOS | ||||||
Entrepix | ![]() |
2003[1] | ||||||
Medtronic | ![]() |
1973[1] | ||||||
Technologies and Devices International | ![]() |
2002[1] | ||||||
Soraa Inc | ![]() |
|||||||
Soraa Laser Diode[309] | ||||||||
Mirrorcle Technologies | ![]() |
|||||||
HTE LABS | ![]() |
0.005 | 2009 | 100, 150 | 4000–1000 | 1,000 | Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com | |
HT Micron | ![]() |
2014 | DRAM, eMCP, iMCP | |||||
Unitec do Brasil | ![]() |
Planned | ||||||
Unitec Blue[312] | ![]() |
0.3 (1.2 planned)[313] | 2013 | RFID, SIM, EMV | ||||
Everlight | Yuan-Li Plant | ![]() |
LEDs | |||||
Everlight | Pan-Yu Plant | ![]() |
LEDs | |||||
Everlight | Tu-Cheng Plant | ![]() |
LEDs | |||||
Optotech[314] | ![]() |
LEDs | ||||||
Arima Optoelectronics | ![]() |
1999[1] | ||||||
Episil Semiconductor | ![]() |
1992, 1990, 1988[1] | ||||||
Episil Semiconductor | ![]() |
1992, 1990, 1988[1] | ||||||
Creative Sensor Inc.[315][316] | NanChang Creative Sensor | ![]() |
2007 | Image Sensors | ||||
Creative Sensor Inc.[315] | Wuxi Creative Sensor | ![]() |
2002 | |||||
Creative Sensor Inc.[315] | Wuxi Creative Sensor | ![]() |
1998 | |||||
Visera Technologies[317] | Headquarters Phase I | ![]() |
2007, September | CMOS Image Sensors | ||||
Panjit | ![]() |
0.1 | 2003[1] | |||||
Nanosystem Fabrication Facility | ![]() |
|||||||
[319] | FAB 1/2 | ![]() |
1992, 1997[1] | 200 | 600 | 78,000[1] | BCD, HV | |
[319] | FAB 3 | ![]() |
2004[1] | 200 | 250 | 12,000[1] | ||
[320] | ![]() |
150 | 1200 | BiCMOS, CMOS | ||||
SiSemi[321] | ![]() |
2004 | 130 | Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs | ||||
SiSemi[322] | 1997 | 100 | Transistors | |||||
CRMicro (formerly CSMC)[323] | Fab 1 | 1998[1] | 150[324] | 60,000[1] | HV Analog, MEMS, Power, Analog, Foundry | |||
CRMicro (formerly CSMC) | Fab 2 | ![]() |
2008[1] | 200[324] | 180, 130 | 40,000[1] | HV Analog, Foundry | |
CRMicro (formerly CSMC) | Fab 3 | 1995[1] | 200[324] | 130 | 20,000[1] | |||
CRMicro (formerly CSMC) | Fab 5 | 2005[1] | 30,000[1] | |||||
Huali (Shanghai Huali Microelectronics Corp, HLMC)[9][325] | F1 | ![]() |
300 | 193, 55, 40, 28[326] | 35,000 | Foundry | ||
Huali[9] | F2 | ![]() |
Under construction | 300 | 40,000 | |||
Nexchip[9] | N1[327] | ![]() |
Q4 2017 | 300 | 40,000 | Display Drivers IC[328] | ||
Nexchip[9] | N2[327] | ![]() |
Under construction | 300 | 40,000 | |||
Nexchip[9] | N3[327] | ![]() |
Under construction | 300 | 40,000 | |||
Nexchip[9] | N4[327] | ![]() |
Under construction | 300 | 40,000 | |||
Wandai[9] | CQ | ![]() |
Under construction | 300 | 20,000 | |||
San'an Optoelectronics | Tianjin San’an Optoelectronics Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Xiamen San’an Optoelectronics Technology Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Xiamen San’an Integrated Circuit | ![]() |
ICs | |||||
San'an Optoelectronics | Xiamen San’an Optoelectronics Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Fujian Jing’an Optoelectronics Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Wuhu Anrui Optoelectronics Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Anrui San'an Optoelectronics Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Anrui San'an Technology Co., Ltd. | ![]() |
LEDs | |||||
San'an Optoelectronics | Luminus Summary | ![]() |
LEDs | |||||
San'an[329] | ![]() |
Foundry, GaN, Power, RF | ||||||
[330] | FAB | ![]() |
300 | 90 | Foundry | |||
HuahongGrace (HHGrace, Huahong Grace, Shanghai Huahong Grace Semiconductor Manufacturing Corporation) | ![]() |
200 | 1000–90 | 53,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
HuahongGrace | ![]() |
200 | 1000–90 | 53,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
HuahongGrace | ![]() |
200 | 1000–90 | 53,000 | Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete | |||
HuaLei Optoelectronic | ![]() |
LEDs[331] | ||||||
Sino King Technology[8] | ![]() |
2017 | DRAM | |||||
APT Electronics | ![]() |
2006[1] | ||||||
Aqualite | ![]() |
2006[1] | ||||||
Aqualite | ![]() |
2008[1] | ||||||
Xiamen Jaysun Semiconductor Manufacturing | Fab 101 | ![]() |
0.035 | 2011[1] | ||||
Xiyue Electronics Technology | Fab 1 | ![]() |
0.096 | 2007[1] | ||||
Hanking Electronics | Fab 1 | ![]() |
2018 | 200 | 10,000 - 30,000 | MEMS Foundry,
MEMS Sensors (Inertial, Pressure, Ultrasound, Piezoelectric, LiDar, Bolometer ) IoT Motion Sensors | ||
CanSemi[332] | ![]() |
4 | 300 | 180–130 | Foundry[333] | |||
SensFab | ![]() |
1995[1] | ||||||
MIMOS Semiconductor | ![]() |
0.006, 0.135 | 1997, 2002[1] | |||||
Silterra Malaysia | Fab1 | ![]() |
1.6 | 2000 | 200 | 250, 200, 180–90 | 46,000 | CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal |
Pyongyang Semiconductor Factory | 111 Factory | ![]() |
1980s | 3000[334] | ||||
Kim Il-sung Fab[334] | Il-sung | ![]() |
1965s | 76 | 14/22[334][failed verification] | 25000–55000 | OLEDs, Sensors, DRAM, SRAM, CMOS, Photodiodes, IGBT, MOSFET, MEMS | |
DongbuHiTek | Fab 1 | ![]() |
1997[1] | Foundry | ||||
DongbuHiTek | Fab 2 | ![]() |
2001[1] | Foundry | ||||
DongbuHiTek | Fab 2 Module 2 | ![]() |
Foundry | |||||
Kodenshi AUK Group[335] | Silicon FAB Line | |||||||
Kodenshi AUK Group[335] | Compound FAB Line | |||||||
Kyocera | SAW devices[143] | |||||||
Seiko Instruments[336] | ![]() |
|||||||
Seiko Instruments[336] | ![]() |
|||||||
Seiko Instruments[336] | ![]() |
|||||||
NIPPON PRECISION CIRCUITS[67] | Digital | |||||||
Epson[337] | T wing | ![]() |
1997 | 200 | 150–350 | 25,000 | ||
Epson[337] | S wing | ![]() |
1991 | 150 | 350–1200 | 20,000 | ||
Olympus Corporation[338] | Nagano | ![]() |
MEMS[339] | |||||
Olympus | ![]() |
MEMS[340] | ||||||
Shindengen Electric Manufacturing[341] | ![]() |
|||||||
Shindengen Electric Manufacturing[341] | ![]() |
|||||||
NKK JFE Holdings[67] | 200 | 6000 | , | |||||
New Japan Radio | Kawagoe Works | ![]() |
1959[67] | 100, 150 | 4000, 400, 350 | Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,
SAW Filters[344] | ||
New Japan Radio | Saga Electronics[345] | ![]() |
100, 150 | 4000, 400, 350[346] | Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,
SAW Filters[344] | |||
New Japan Radio | NJR FUKUOKA | ![]() |
2003[347] | 100, 150 | Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs | |||
New Japan Radio | ![]() |
|||||||
New Japan Radio | ![]() |
|||||||
Nichia | YOKOHAMA TECHNOLOGY CENTER[349] | ![]() |
LEDs | |||||
Nichia | SUWA TECHNOLOGY CENTER[349] | ![]() |
LEDs | |||||
AKM Semiconductor, Inc. | FAB1 | ![]() |
Sensors | |||||
AKM Semiconductor, Inc. | FAB2 | ![]() |
||||||
AKM Semiconductor, Inc. | FAB3 | ![]() |
Sensors | |||||
AKM Semiconductor, Inc. | FAB FP | ![]() |
||||||
AKM Semiconductor, Inc. | FAB5 | ![]() |
LSI | |||||
Taiyo Yuden | ![]() |
SAW devices[143] | ||||||
Taiyo Yuden | ![]() |
SAW devices[143] | ||||||
NMB SEMICONDUCTOR[67] | DRAM | |||||||
Elmos Semiconductor | ![]() |
1984 | 200 | 800, 350 | 9000 | HV-CMOS | ||
United Monolithic Semiconductors[351] | ![]() |
100 | 700, 250, 150, 100 | Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode | ||||
United Monolithic Semiconductors[351] | ![]() |
100 | Foundry, BEOL | |||||
Innovative Ion Implant | ![]() |
51–300[352] | ||||||
Innovative Ion Implant | ![]() |
51–300[352] | ||||||
nanoPHAB | ![]() |
50–100 | 10–50 | 2–10 | MEMS | |||
Micron Semiconductor Ltd.[353] | Lancing | ![]() |
Detectors | |||||
PragmatIC | FlexLogIC 001 | ![]() |
2018 | 200 | 800–320 | Flexible Semiconductor /
Foundry and IDM | ||
![]() |
2014 | 150 | Foundry | |||||
CSTG | ![]() |
2003[1] | 76, 100 | InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry | ||||
Photonix | ![]() |
0.011 | 2000[1] | |||||
Silex Microsystems | ![]() |
0.009, 0.032 | 2003, 2009[1] | |||||
Integral | ![]() |
1963 | 100, 150, 200 | 2000, 1500, 350 | ||||
CNE | ![]() |
2015 | 300 | 65 | 4000 | MRAM, RRAM, MEMS, IPD, TMR, GMR Sensors, foundry | ||
Mikron | ![]() |
65–180 | ||||||
WaferFab[355] | ![]() |
1959 | 100/150 | 900+ | 6000 | Analog, power |
Number of open fabs currently listed here: 535
(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)
Closed plants[]
Defunct fabs include:
Company | Plant Name | Plant Location | Plant Cost (in US$ Billions) | Started Production | Wafer Size (mm) | Process Technology Node (nm) | Production Capacity (Wafers/Month) | Technology / Products | hideEnded Production |
---|---|---|---|---|---|---|---|---|---|
Soviet Union | Jupiter | ![]() |
1980 | Secret government semiconductor fab closed by Chernobyl disaster | 1996 | ||||
Tower Semiconductor (formerly Micron) | Fab 4[356] | ![]() |
0.450[1] | 1992[1] | 200 | 95 | 60,000[1] | DRAM, foundry | 2014 |
Tower Semiconductor - Tacoma | ![]() |
halted, bankruptcy in June 2020[359] | 200, 300 (planned) | Foundry | 2020 | ||||
Fujian Jinhua (JHICC)[9][360][361][362] | F2 | ![]() |
5.65[363] | 2018 (planned) | 300 | 22 | 60,000 | DRAM[8] | 2018 |
Decoma[9] | F2 | ![]() |
Under construction | 300 | 20,000 | 2020 | |||
Wuhan Hongxin Semiconductor Manufacturing ()[364] | ![]() |
2019 (halted) | 300 | 14, 7 | Foundry | 2020 | |||
Tsinghua Unigroup - Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[9] | SZ | ![]() |
12.5 | Planned | 300 | 50,000 | DRAM | 2019 (just plan) | |
TSMC | Fab 1[211] | ![]() |
1987 | 150 | 20,000 | Foundry | March 9, 2001 | ||
UMC | Fab 1 | ![]() |
0.543[1] | 1997[1] | 200 | 40,000 | Foundry | 2012 | |
SK Hynix | E-4 | ![]() |
1.3 | 2007 | 200 | 30,000 | DRAM | 2008[365] | |
Symetrix - Panasonic[366] | ![]() |
0.9 (planned) | planned | FeRAM | (just plan) | ||||
Rohm (formerly Data General) | ![]() |
||||||||
Kioxia | Fab 1 (at Yokkaichi Operations)[368] | ![]() |
1992 | 200 | 400 | 35,000 | SRAM, DRAM | September, 2001 | |
NEC | Livingston[369] | ![]() |
4.5 (total) | 1981 | 200 | 250, 180 | 30,000 | DRAM | April 2001 |
Renesas Electronics)[370] | (formerly![]() |
1992 | 200 | 2011 | |||||
(formerly Atmel)[371] | ![]() |
? | 200 | 25.000[372] | |||||
Atmel (formerly Siemens) | Fab 9[373] | UK ![]() |
1.53[374] | 1998[375] | DRAM[375] | 2007[376] | |||
EI Niš | Ei Poluprovodnici | ![]() |
1962 | 100 | 2000 | ||||
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors) | ![]() |
||||||||
Telefunken Semiconductors | Heilbronn, HNO-Line | ![]() |
0.125[1] | 1993[1] | 150 | 10,000 | 2015 | ||
Qimonda | Richmond[377] | ![]() |
3 | 2005 | 300 | 65 | 38,000 | DRAM | January, 2009 |
STMicroelectronics (formerly Nortel[67]) | 100, 150 | NMOS, CMOS | |||||||
Freescale Semiconductor (formerly Motorola) | Toulouse Fab[378] | ![]() |
1969 | 150 | Automotive | 2012[379] | |||
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor) | Sendai Fab[380] | ![]() |
1987 | 150, 200 | 500 | DRAM, microcontrollers, analog, sensors | 2009? | ||
Agere (formerly Lucent) (formerly AT&T)[381] | ![]() |
0.67[382] | 1987[383] | 300, 350, 500 | CMOS | 2001 | |||
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology) | ![]() |
1969 1976 1995 |
1000 | 1976 1992[384] 2001 | |||||
Integrated Device Technology | ![]() |
1985 | 150 | 350–800[135] | 2002 | ||||
ON Semiconductor (formerly Cherry Semiconductor) | ![]() |
2004 | |||||||
Intel | Fab 8[38] | ![]() |
1985 | 150 | Microprocessors, Chipsets, Microcontrollers[39] | 2007 | |||
Intel | Fab D2 | ![]() |
1989 | 200 | 130 | 8,000 | Microprocessors, Chipsets, Flash memory | 2009 | |
Intel | Fab 17[29][28] | ![]() |
1998 | 200 | 130 | Chipsets and other[28] | 2014 | ||
Fairchild Semiconductor (formerly National Semiconductor) | West Jordan | ![]() |
1977 | 150 | 2015[385] | ||||
Texas Instruments | HFAB | ![]() |
1967 | 150 | 2013[386] | ||||
Texas Instruments (formerly Silicon Systems) | Santa Cruz | ![]() |
0.250 | 1980 | 150 | 800 | 80,000 | HDD | 2001 |
Texas Instruments (formerly National Semiconductor) | Arlington | ![]() |
1985 | 150 | 80000, 35000 | 2010 | |||
Unknown (fortune 500 company) | ![]() |
150 | 1,600 | MEMS | 2016 | ||||
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T) | KFAB | ![]() |
1994[388] | 130 | 2017[389] | ||||
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek) | ![]() |
SAW filters | 2019 | ||||||
GlobalFoundries | Abu Dhabi[1] | ![]() |
6.8[1] (planned) | 2016[1] (planned) | 300 | 110–180 | 45,000 | Foundry | 2011 (plan stopped) |
GlobalFoundries - Chengdu | ![]() |
10 (planned) | 2018 (planned), 2019 (second phase) | 300 | 180/130 (cancelled), 22 (second phase) | 20,000 (85,000 planned) | Foundry, FDSOI (second phase) | 2020 (was idle) |
Number of closed fabs currently listed here: 41
See also[]
- List of Intel manufacturing sites
- Semiconductor device fabrication
References[]
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- ^ "Western Digital to invest $4.6bn in joint venture with Toshiba". Nikkei Asian Review.
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- ^ "Toshiba : Press Release (15 Jul, 2016): Toshiba and Western Digital Celebrate the Opening of New Fab 2 Semiconductor Fabrication Facility in Yokkaichi, Japan". Toshiba.co.jp.
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- ^ Shilov, Anton. "Toshiba Memory & Western Digital Finalize Fab K1 Investment Agreement". www.anandtech.com.
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- ^ Jump up to: a b c Ltd., Hitachi Power Semiconductor Device. "Company Office : Hitachi Power Semiconductor Device, Ltd". Hitachi-power-semiconductor-device.co.jp.
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- ^ "Status of Sony Group Manufacturing Operations Affected by the East Japan Earthquake, Tsunami and Related Power Outages". Sony Global - Sony Global Headquarters.
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|title=
(help) - ^ "Infineon Technologies Dresden" (PDF). Infineon.com. Retrieved 2017-03-22.
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Samsung capacity
External links[]
- The IC Foundry Almanac. 2009 edition. Section III: IC Foundry providers[dead link] // IC Insights, Global Semiconductor Alliance, 2009
- Memory and Foundry Account For More Than Half of Worldwide IC Capacity // IC Insights, Global Semiconductor Alliance, 2013-07-09
- SEMI World Fab Forecast 2013 // SEMI, 2013
- Worldwide Location of Wafer Fabs – Interactive Map
- Intel x86 microprocessors
- Semiconductor device fabrication
- Intel
- Motorola
- Texas Instruments
- Lists of manufacturers
- Manufacturing plants