GlobalFoundries

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GlobalFoundries Inc.
TypePrivate
IndustrySemiconductor manufacturer
FoundedMarch 2, 2009; 12 years ago (2009-03-02)
HeadquartersMalta, New York, U.S.
Key people
Dr. Thomas Caulfield (CEO)[1]
ProductsSemiconductor
Number of employees
15,000
ParentMubadala Investment Company
Websiteglobalfoundries.com
Footnotes / references
[2]

GlobalFoundries Inc. (GF) is a United States-based semiconductor manufacturer headquartered in Malta, New York.[3] GlobalFoundries was created by the divestiture of the manufacturing arm of Advanced Micro Devices (AMD) and is owned by Mubadala Investment Company.

GlobalFoundries is the world's fourth largest semiconductor manufacturer[4][5] and produces chips for more than 7% of the $86 billion semiconductor manufacturing services industry. The company manufactures chips designed for high-growth markets such as mobility, automotive, computing and wired connectivity, consumer internet of things (IoT) and industrial.

As of 2021, GlobalFoundries is the only semiconductor manufacturer with simultaneous operations in Singapore, the European Union, and the United States. The company has one 200mm and one 300mm fabrication plants in Singapore; one 300 mm plant in Dresden, Germany; one 200 mm plant in Burlington, Vermont (where it is the largest private employer)[6] and two 300 mm plants in New York: one in East Fishkill and one in Malta.[7]

GlobalFoundries is a "Trusted Foundry" for the U.S. federal government and has similar designations in Singapore and Dresden including certified international Common Criteria standard (ISO 15408, CC Version 3.1).[8][9]

The company has more than 250 customers around the world and has 15,000 employees representing 92 nationalities in 14 countries. GlobalFoundries holds more than 10,000 patents and applications.

CEO Thomas Caulfield has said GlobalFoundries plans to become a publicly traded company in 2022.[10]

Overview[]

On October 7, 2008, AMD announced it planned to go fabless and spin off their semiconductor manufacturing business into a new company temporarily called The Foundry Company. Mubadala announced their subsidiary Advanced Technology Investment Company (ATIC) agreed to pay $700 million to increase their stake in AMD's semiconductor manufacturing business to 55.6% (up from 8.1%). Mubadala will invest $314 million for 58 million new shares, increasing their stake in AMD to 19.3%. $1.2 billion of AMD's debt will be transferred to The Foundry Company.[11] On 8 December 2008, amendments were announced. AMD will own approximately 34.2% and ATIC will own approximately 65.8% of The Foundry Company.[12]

On March 4, 2009, GlobalFoundries was officially announced.[13] On September 7, 2009, ATIC announced it would acquire Chartered Semiconductor for S$2.5 billion (US$1.8 billion) and integrate Chartered Semiconductor into GlobalFoundries.[14] On January 13, 2010, GlobalFoundries announced it had finalized the integration of Chartered Semiconductor.[15]

On March 4, 2012, AMD announced they divested their final 14% stake in the company, which concluded AMD's multi-year plan to divest its manufacturing arm.[16]

On October 20, 2014, IBM announced the sale of its microelectronics business to GlobalFoundries.[17]

As of 2015, the firm owned ten fabrication plants. Fab 1 is in Dresden, Germany. Fabs 2 through 7 are in Singapore. Fabs 8 through 10 are in the northeast United States. These sites are supported by a global network of R&D, design enablement, and customer support in Singapore, China, Taiwan, Japan, India, the United States, Germany, and the United Kingdom.[18] In February 2017, the company announced a new 300 Fab [Fab 11] in China for growing semiconductor market in China.[19]

In 2016, GlobalFoundries licensed the 14 nm 14LPP FinFET process from Samsung Electronics. In 2018, GlobalFoundries developed the 12 nm 12LP node based on Samsung's 14 nm 14LPP process.[20]

On August 27, 2018, GlobalFoundries announced it had cancelled their 7LP process due to a strategy shift to focus on specialized processes instead of leading edge performance.[21]

On January 29, 2019, AMD announced an amended wafer supply agreement with GlobalFoundries. AMD now has full flexibility for wafer purchases from any foundry at 7 nm or beyond. AMD and GlobalFoundries agreed to commitments and pricing at 12 nm for 2019 through 2021.[22]

On May 20, 2019, Marvell announced it would acquire Avera Semi from GlobalFoundries for $650 million and potentially an additional $90 million. Avera Semi was GlobalFoundries' ASIC Solutions division, which had been a part of IBM's semiconductor manufacturing business.[23] On February 1, 2019, GlobalFoundries announced the $236 million sale of its Fab 3E in Tampines, Singapore, to Vanguard International Semiconductor (VIS) as part of their plan to exit the MEMS business by December 31, 2019.[24] on April 22, 2019, GlobalFoundries announced the $430 million sale of their Fab 10 in East Fishkill, New York, to ON Semiconductor. GlobalFoundries has received $100 million and will receive $330 million at the end of 2022 when ON Semiconductor will gain full operational control. The 300mm fab is capable of 65 nm to 40 nm and was a part of IBM.[25] On August 15, 2019, GlobalFoundries announced a multi-year supply agreement with Toppan Photomasks. The agreement included Toppan acquiring GlobalFoundries' Burlington photomask facility.[26]

In February 2020, GlobalFoundries announced that its embedded magnetoresistive non-volatile memory (eMRAM) has entered production which is the industry's first production ready eMRAM.[27]

In May 2020, GlobalFoundries stated it was fully abandoning its plans of opening Fab 11 in Chengdu, China due to reported rivalry between the latter and the US.[28] This was three years after the manufacturer announced it would invest $10 billion to open the new fab; the fab was never brought online.[29]

GlobalFoundries v. TSMC et al[]

On August 26, 2019, GlobalFoundries filed patent infringement lawsuits against TSMC and some of TSMC's customers[30] in the US and Germany. GlobalFoundries claims TSMC's 7 nm, 10 nm, 12 nm, 16 nm, and 28 nm nodes have infringed on 16 of its patents. Lawsuits were filed in the U.S. International Trade Commission, the U.S. Federal District Courts in the Districts of Delaware, the Western District of Texas, the Regional Courts of Düsseldorf, and Mannheim in Germany.[31] GlobalFoundries has named 20 defendants: Apple, Broadcom, MediaTek, Nvidia, Qualcomm, Xilinx, Arista, ASUS, BLU, Cisco, Google, Hisense, Lenovo, Motorola, TCL, OnePlus, Avnet/EBV, Digi-Key and Mouser.[32] On August 27, TSMC announced it was reviewing the complaints filed, but are confident that the allegations are baseless and will vigorously defend its proprietary technology.[33]

On October 1, 2019, TSMC filed patent infringement lawsuits against GlobalFoundries in the US, Germany and Singapore. TSMC claimed GlobalFoundries' 12 nm, 14 nm, 22 nm, 28 nm and 40 nm nodes have infringed on 25 of its patents.[34]

On October 29, 2019, TSMC and GlobalFoundries announced a resolution to the dispute. The companies agreed to a new life-of-patents cross-license for all of their existing semiconductor patents as well as new patents to be filed by the companies in the next ten years.[35][36][37][38][39]

List of GlobalFoundries CEOs[]

Original CEO: Doug Grose (until July 2011)[40]

Subsequent: Ajit Manocha (until January 2014)[41][circular reference]

Subsequent: Sanjay Jha (until May 2018)[42]

Subsequent: Tom Caulfield (current CEO)[43]

Fabrication foundry[]

Name Wafer Location Process
Fab 1 300 mm Dresden, Germany 51°07′30″N 13°42′58″E / 51.125°N 13.716°E / 51.125; 13.716 (GlobalFoundries Fab 1, Dresden) 55, 45, 40, 32, 28, 22 nm, 12 nm
Fab 2 200 mm Woodlands, Singapore 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 600–350 nm
Fab 3/5 200 mm Woodlands, Singapore 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 350–180 nm
Fab 3E 200 mm Tampines, Singapore (2019: sold to VIS) 1°22′16″N 103°55′44″E / 1.371°N 103.929°E / 1.371; 103.929 (GlobalFoundries Fabs in Tampines, Singapore) 180 nm
Fab 6 200 mm Woodlands, Singapore (converted to 300 mm and merged into Fab 7) 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 180–110 nm
Fab 7 300 mm Woodlands, Singapore 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 130–40 nm
Fab 8 300 mm Luther Forest Technology Campus, Saratoga County, New York, United States 42°58′12″N 73°45′22″W / 42.970°N 73.756°W / 42.970; -73.756 (GlobalFoundries Fab 8) 28, 20, 14 nm
Fab 9 200 mm Essex Junction, Vermont, United States 44°29′N 73°06′W / 44.48°N 73.10°W / 44.48; -73.10 (GlobalFoundries Fab 9)[44] 350–90 nm
Fab 10 300 mm East Fishkill, New York, United States (2019: started transfer to ON Semiconductor) 41°32′24″N 73°49′19″W / 41.540°N 73.822°W / 41.540; -73.822 (GlobalFoundries Fab 10) 90–22 nm, 14 nm

300 mm fabrication facilities[]

Globalfoundries Fab 1 in Dresden

Fab 1[]

Fab 1, located in Dresden, Germany, is a 364,512 m2 plant which was transferred to GlobalFoundries on its inception: Fab 36 and Fab 38 were renamed Module 1 and Module 2, respectively. Each module can produce 25,000 300 mm diameter wafers per month.[7][45]

Module 1 is a 300 mm wafer production facility. It is capable of manufacturing wafers at 40 nm, 28 nm BULK and 22 nm FDSOI. Module 2 was originally named "(AMD) Fab 30" and was a 200 mm fab producing 30,000 Wafer Outs Per Month, but has now been converted into a 300 mm wafer fab. Together with other clean room extensions like the Annex they have a maximum full capacity of 80,000 of 300 mm wafers/month. (180,000 200 mm wafers/month equivalent), using technologies of 45 nm and below.

In September 2016, GlobalFoundries announced Fab 1 would be refit to produce 12 nm fully depleted silicon on insulator (FDSOI) products.[46] The company expected customer's products would begin to tape out in the first half of 2019.

Fab 7[]

Fab 7, located in Woodlands, Singapore, is an operational 300 mm Fab, originally owned by Chartered Semiconductor. It produces wafers at 130 nm to 40 nm on bulk CMOS and SOI processes. It has a maximum full capacity of 50,000 300 mm wafers/month (112,500 200 mm wafers/month equivalent), using 130 to 40 nm technology.[7]

4/15/2021 Fab 7's target capacity will be expanded to 70–80kpcs/M.

Fab 8[]

Fab 8, located in Luther Forest Technology Campus, Saratoga County, New York, United States is a 300 mm fab. This fabrication plant was constructed by GF as a green field fab for advanced technologies. It is capable of manufacturing 14 nm node technology. The plant's construction began in July 2009 and the company started mass production in 2012.[7][47] It has a maximum manufacturing capacity of 60,000 of 300 mm wafers/month, or the equivalent of over 135,000 of 200 mm wafers/month. In September 2016, GlobalFoundries announced it would make a multibillion-dollar investment to refit Fab 8 to produce 7 nm FinFET parts starting in the second half of 2018.[48] The process was planned to initially use deep ultraviolet lithography, and eventually transition to extreme ultraviolet lithography.[49]

However, in August 2018, GlobalFoundries made the decision to suspend 7 nm development and planned production, citing the unaffordable costs to outfit Fab 8 for 7 nm production. GlobalFoundries held open the possibility of resuming 7 nm operations in the future if additional resources could be secured. From this decision GlobalFoundries executed a shift in company strategy to focus more effort on FD-SOI manufacturing and R&D. Fab 8 serves a crucial function to supply AMD (Advanced Micro Devices) with CPU Wafers for its Zen line of microprocessors used in the Ryzen, Threadripper and Epyc lines of CPUs. The original Zen and the Zen+ CPUs are of a monolithic design which were produced at Global Foundries Malta Facilities in Malta, NY. Going forward AMD will pursue a multiple Chiplet Design with the Zen 2 microprocessor. The Zen 2 will consist of a 14/12 nm manufactured IO die surrounded by a number of 7 nm Core dies. When Global Foundries announced the suspension of 7 nm operations AMD executed a shift in plans transferring production of the 7 nm core dies to TSMC (Taiwan Semiconductor Corporation). There was speculation in some quarters as to where manufacture of the Core Dies would take place. In AMD's 2018 4th Quarter Financial Conference call which took place on January 29, 2019 AMD CEO Lisa Su announced the WSA (Wafer Supply Agreement) governing production and acquisition by AMD from GlobalFoundries had been amended for the 7th time. The amendment stated AMD would continue to procure 12 nm node and above from Global Foundries while giving AMD latitude to purchase 7 nm node manufactured wafers from any source free from paying any royalties. The agreement will run through 2024 and ensures that Global Foundries will have work for its Malta plant for that time period. Pricing commitments for Wafers runs through 2021 when it is likely the WSA will be amended again.[50]

Fab 10[]

Fab 10,[51] located in East Fishkill, New York, United States, was previously known as IBM Building 323. It became part of GlobalFoundries operations with the acquisition of IBM Microelectronics. It currently manufactures technology down to the 14 nm node. In April 2019, it was announced that this fab has been sold to ON Semiconductor for $430m. The facility will be transferred over within three years.[52]

200 mm fabrication facilities[]

All 200 mm fabs except Fab 9 are located in Singapore, and originally owned by Chartered Semiconductor.

Fab 2[]

Fab 2, located in Woodlands, Singapore. This fab is capable of manufacturing wafers at 600 to 350 nm for use in selected automotive IC products, High Voltage power management IC and Mixed-signal products.

Fab 3/5[]

Fab 3/5, located in Woodlands, Singapore. This fab is capable of manufacturing wafers at 350 to 180 nm for use in high voltage IC's for small panel display drivers and mobile power management modules.

Fab 3E[]

Fab 3E, located in Tampines, Singapore. This fab produces 180 nm wafers for use in selected automotive IC products, High Voltage power management IC and Mixed-Signal products with embedded non-volatile memory technology.

In January 2019 GlobalFoundries announced that it had agreed to sell its Fab 3E in Singapore to Vanguard International Semiconductor Corporation with transfer of ownership set to be completed on December 31, 2019.

Fab 6[]

Fab 6 located in Woodlands, Singapore, is a copper fabrication facility that is capable of manufacturing integrated CMOS and RFCMOS products for applications such as Wi-Fi & Bluetooth devices at 180 to 110 nm processes. The facility was later converted to 300mm and merged with Fab 7, a facility for manufacturing products based on the 300 nm node.

Fab 9[]

Fab 9,[51] located in the village of Essex Junction, Vermont, United States, near Vermont's largest city of Burlington, became part of GlobalFoundries operations with the acquisition of IBM Microelectronics. The fab manufactures technologies down to the 90 nm node and is the largest private employer within the state of Vermont. The site also hosted a captive mask shop, with development efforts down to the 7 nanometer node, until it was sold to Toppan in 2019.[53]

Mergers and acquisitions[]

Merger with Chartered Semiconductor[]

The majority investor of GlobalFoundries, Abu Dhabi's Advanced Technology Investment Co., announced on September 6, 2009, that it has agreed to acquire Singapore-based Chartered Semiconductor Manufacturing Co. Ltd., for a total of $3.9 billion, with Chartered's operations being folded into GlobalFoundries.[54]

Chartered Semiconductor is a member of the , IBM's semiconductor technology alliance. GlobalFoundries is a JDA partner of Common Platform Technology Alliance.

Acquisition and Sale of IBM's chip-manufacturing unit[]

In October 2014, GlobalFoundries received US$1.5 billion from IBM to accept taking over IBM's chip-manufacturing business unit, including a 200 mm fab (now Fab 9) in Essex Junction, Vermont, and a 300 mm fab (now Fab 10) in East Fishkill, New York. As part of the agreement, GlobalFoundries will be the sole provider of IBM's server processor chips for the next 10 years. The deal closed on July 1, 2015.[55] IBM-India employees who moved over to GlobalFoundries as part of the acquisition are now part of its Bangalore office.[56]

In April 2019 ON Semiconductor and GlobalFoundries announced a $430 million agreement to transfer ownership of GlobalFoundries 300mm Fab 10 in East Fishkill, New York, to ON Semiconductor.[57]

Process technologies[]

GlobalFoundries' 22 nm FD-SOI process is second-sourced from STMicroelectronics.[58] STMicroelectronics signed a sourcing and licensing agreement with Samsung for the same technology later.[59]

GlobalFoundries' 14 nm 14LPP FinFET process is second-sourced from Samsung Electronics. GlobalFoundries' 12 nm FinFET nodes are based on Samsung's 14 nm 14LPP process.[20]

Node name ITRS
node
(nm)		 Date
introduced		 Wafer size
(mm)		 Lithography
(wavelength)		 Transistor
type		 Gate
pitch
(nm)		 Metal 1
pitch
(nm)		 SRAM
bit density
(µm2)
4S 600 1993 200 Bulk – Planar – – –
CS-24 500 1993 Bulk – Planar – – –
5L 500 – 200 Bulk – Planar – – –
5S 500 1994 200 Bulk – Planar – – –
SiGe 5HP 500 2001 200 – Planar – – –
SiGe 5AM 500 2001 200 – Planar – – –
SiGe 5DM 500 2002 200 – Planar – – –
SiGe 5PA 500 2002 200 – Planar – – –
5X 1994 200 Bulk – Planar – – –
CS-34 350 1995 Bulk – Planar – – –
SiGe 5HPE 350 2001 200 – Planar – – –
SiGe 5PAe[60] 350 2007 200 – Planar – – –
SiGe 5PAx[60] 350 2016 200 – Planar – – –
SiGe 1KW5PAe[60] 350 – 200 – Planar – – –
SiGe 1K5PAx[60] 350 2016 200 – Planar – – –
6S 1996 200 Bulk – Planar – – –
CS-44 250 1998 Bulk Dry 248nm DUV Planar – – –
6S2 250 1997 200 Bulk Dry 248nm DUV Planar – – –
6SF 250 – 200 Bulk Dry 248nm DUV Planar – – –
6X 250 1997 200 Bulk – Planar – – –
6RF 250 2001 200 Bulk Dry 248nm DUV Planar – – –
250SOI 250 1999 200 SOI Dry 248nm DUV Planar – – –
SiGe 6HP 250 – 200 Dry 248nm DUV Planar – – –
SiGe 6DM 250 – 200 Dry 248nm DUV Planar – – –
SiGe 6WL 250 2007 200 Dry 248nm DUV Planar – – –
7S 1998 200 Bulk Dry 248nm DUV Planar – – –
220SOI 1999 200 SOI Dry 248nm DUV Planar – – –
7HV 180 2010 200 Dry 248nm DUV Planar – – –
180 BCDLite[61] 180 2011 200 Dry 248nm DUV Planar – – –
180 UHV[61] 180 2017 200 Dry 248nm DUV Planar – – –
7SF 180 1999 200 Bulk Dry 248nm DUV Planar – – –
7TG 180 – 200 Bulk Dry 248nm DUV Planar – – –
7RF 180 2003 200 Bulk Dry 248nm DUV Planar – – –
8S 180 2000 200 SOI Dry 248nm DUV Planar – – –
7RF SOI[62] 180 2007 200 RF-SOI, 300 RF-SOI Dry 248nm DUV Planar – – –
7SW RF SOI[62] 180 2014 200 RF-SOI Dry 248nm DUV Planar – – –
SiGe 7WL[63] 180 2003 200 Dry 248nm DUV Planar – – –
SiGe 7HP 180 2003 200 Dry 248nm DUV Planar – – –
130 BCDLite[61] 130 2014 300 Dry 248nm DUV Planar – – –
130 BCD[61] 130 – 300 Dry 248nm DUV Planar – – –
8SF 130 2000 200 Bulk Dry 248nm DUV Planar – – –
8SFG 130 2003 200 Bulk, 300 Bulk Dry 248nm DUV Planar – – –
8RF 130 2003 200 Bulk, 300 Bulk Dry 248nm DUV Planar – – –
130G[64] 130 – 300 Bulk Dry 248nm DUV Planar – – –
130LP[64] 130 – 300 Bulk Dry 248nm DUV Planar – – –
130LP/EE[64] 130 – 300 Bulk Dry 248nm DUV Planar – – –
110TS[64] 130 – 300 Bulk Dry 248nm DUV Planar – – –
9S 130 2000 200 SOI, 300 SOI Dry 248nm DUV Planar – – –
130RFSOI[62] 130 2015 300 RF-SOI Dry 248nm DUV Planar – – –
8SW RF SOI[62] 130 2017 300 RF-SOI Dry 248nm DUV Planar – – –
SiGe 8WL[63] 130 2005 200 Dry 248nm DUV Planar – – –
SiGe 8HP[63] 130 2005 200, 300 Dry 248nm DUV Planar – – –
SiGe 8XP[63] 130 2016 200 Dry 248nm DUV Planar – – –
9SF 90 2004 300 Bulk Dry 193nm DUV Planar – – –
9LP 90 2005 300 Bulk Dry 193nm DUV Planar – – –
9RF 90 – 300 Bulk Dry 193nm DUV Planar – – –
10S 90 2002 300 SOI Dry 193nm DUV Planar – – –
90RFSOI 90 2004 300 RF-SOI Dry 193nm DUV Planar – – –
90WG[65] 90 2018 300 Dry 193nm DUV Planar – – –
90WG+[65] 90 ? 300 Dry 193nm DUV Planar – – –
SiGe 9HP[63] 90 2014, 2018 200, 300 Dry 193nm DUV Planar – – –
10SF 65 – 300 Bulk Dry 193nm DUV Planar – – –
10LP 65 – 300 Bulk Dry 193nm DUV Planar – – –
65LPe[66] 65 2009 300 Bulk Dry 193nm DUV Planar – – –
65LPe-RF[66] 65 2009 300 Bulk Dry 193nm DUV Planar – – –
10RFe 65 – 300 Bulk Dry 193nm DUV Planar – – –
11S 65 2006 300 SOI Dry 193nm DUV Planar – – –
65RFSOI 65 2008 300 RF-SOI Dry 193nm DUV Planar – – –
55 BCDLite[66] 55 2018 300 Dry 193nm DUV Planar – – –
55HV[67] 55 ? 300 Dry 193nm DUV Planar – – –
55 ULP[66] 55 – 300 Bulk Dry 193nm DUV Planar – – –
55LPe 55 – 300 Bulk Dry 193nm DUV Planar – – –
55LPe-RF 55 – 300 Bulk Dry 193nm DUV Planar – – –
55LPx[66] 55 – 300 Bulk Dry 193nm DUV Planar – – –
55RF[66] 55 – 300 Bulk Dry 193nm DUV Planar – – –
45LP 45 – 300 Bulk Wet 193nm DUV Planar – – –
12S 45 2007 300 SOI Wet 193nm DUV Planar – – –
45RFSOI[62] 45 2017 300 RF-SOI Wet 193nm DUV Planar – – –
45CLO[68] 45 2021 300 Wet 193nm DUV Planar – – –
40HV[67] 40 ? 300 Wet 193nm DUV Planar – – –
40LP[69] 40 – 300 Bulk Wet 193nm DUV Planar – – –
40LP-RF[69] 40 – 300 Bulk Wet 193nm DUV Planar – – –
32LP 32 – 300 Bulk Wet 193nm DUV, double patterning Planar – – –
32SHP 32 ? 300 SOI Wet 193nm DUV, double patterning Planar – – –
13S 32 2009 300 SOI Wet 193nm DUV, double patterning Planar – – –
28HV[67] 28 2019 300 Wet 193nm DUV, double patterning Planar – – –
28LP 28 2009 300 Bulk Wet 193nm DUV, double patterning Planar – – –
28SLP[70] 28 2010 300 Bulk Wet 193nm DUV, double patterning Planar – – –
28HP 28 2010 300 Bulk Wet 193nm DUV, double patterning Planar – – –
28HPP[70] 28 2011 300 Bulk Wet 193nm DUV, double patterning Planar – – –
28SHP 28 2013 300 Bulk Wet 193nm DUV, double patterning Planar – – –
28SLP RF 28 2015 300 Bulk Wet 193nm DUV, double patterning Planar – – –
28FDSOI[58][59] 28 2012 300 FD-SOI Wet 193nm DUV Planar – – –
22FDX-ULP[71] 22 2015 300 FD-SOI Wet 193nm DUV, double patterning Planar – – –
22FDX-UHP[71] 22 2015 300 FD-SOI Wet 193nm DUV, double patterning Planar – – –
22FDX-ULL[71] 22 2015 300 FD-SOI Wet 193nm DUV, double patterning Planar – – –
22FDX-RFA[71] 22 2017 300 FD-SOI Wet 193nm DUV, double patterning Planar – – –
22FDX RF+[72] 22 2021 300 FD-SOI Wet 193nm DUV, double patterning Planar – – –
14LPP[73] 14 2015 300 Bulk Wet 193nm DUV, double patterning 3D (FinFET) 78 64 0.09
14HP[74] 14 2017 300 SOI Wet 193nm DUV, double patterning 3D (FinFET) – – –
12LP[75] 12 2018 300 Bulk Wet 193nm DUV, double patterning 3D (FinFET) – – –
12LP+[76] 12 2019 300 Bulk Wet 193nm DUV, double patterning 3D (FinFET) – – –

Number of processes currently listed here: 102

See also[]

References[]

  1. ^ "Following Significant Technology, Capacity and Expansion Milestones, GlobalFoundries' Sanjay Jha to Pass Baton to Industry Veteran Tom Caulfield". 9 March 2018.
  2. ^ "About Us". GlobalFoundries. 28 September 2016. Retrieved 2019-07-04.
  3. ^ "GLOBALFOUNDRIES Moves Corporate Headquarters to its Most Advanced Semiconductor Manufacturing Facility in New York" April 26, 2021. Retrieved April 26, 2021.
  4. ^ Sun, Leo (2021-07-21). "Intel's Interest in GlobalFoundries Could Affect These 4 Chipmakers". The Motley Fool. Retrieved 2021-08-16.
  5. ^ Leswing, Kif (2021-04-02). "CEO of largest U.S. chip foundry explains why semiconductor shortage could last through 2022". CNBC.
  6. ^ "Bottom Line: How GlobalFoundries Makes Microchips During Lockdown". Retrieved 15 February 2021.
  7. ^ Jump up to: a b c d "Manufacturing". Retrieved 6 August 2015.
  8. ^ "https://twitter.com/jchatterleycnn/status/1379463063779282945". Twitter. External link in |title= (help)
  9. ^ Shih, Willy. "GlobalFoundries To Build Secure Chips For Defense Department In Upstate New York". Forbes.
  10. ^ "GlobalFoundries Plans To Go Public in 2022". Toms Hardware. Retrieved 1 October 2019.
  11. ^ Smith, Ryan. "The Business of Tech: Breaking Up Is Hard to Do - AMD Goes Fabless". anandtech.com. Retrieved 2019-08-29.
  12. ^ "AMD, the Advanced Technology Investment Company and Mubadala amend transaction agreements". mubadala.com. 2008-12-08. Retrieved 2019-08-29.
  13. ^ "GlobalFoundries, World's First Global Semiconductor Foundry Company Opens for Business". mubadala.com. 2009-03-04. Retrieved 2019-08-29.
  14. ^ "ATIC bids to buy Chartered Semiconductor; GlobalFoundries smiles politely". PC Perspective. Retrieved 2019-08-29.
  15. ^ "GlobalFoundries Finalizes Integration, Emerges as World's First Truly Global Foundry". GlobalFoundries. 2010-01-17. Archived from the original on 2010-01-17. Retrieved 2019-08-29.
  16. ^ Shimpi, Anand Lal. "GlobalFoundries Granted Independence, Acquires Remaining Stake from AMD". AnandTech. Retrieved 8 December 2012.
  17. ^ "GlobalFoundries to Acquire IBM's Microelectronics Business" (PDF). ibm.com. Retrieved 2019-09-02.
  18. ^ "GlobalFoundries Unveils Industry's First 28nm Signoff-Ready Digital Design Flows" (Press release). 13 January 2011.
  19. ^ "globalfoundries-to-expand-capacities-build-a-fab-in-china" (Press release). 11 February 2017.
  20. ^ Jump up to: a b Schor, David (2018-07-22). "VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP". WikiChip Fuse. Retrieved 2019-05-31.
  21. ^ Cutress, Anton Shilov, Ian. "GlobalFoundries Stops All 7nm Development: Opts To Focus on Specialized Processes". anandtech.com. Retrieved 2019-08-29.
  22. ^ "Document". sec.gov. Retrieved 2019-08-29.
  23. ^ Marvell. "Marvell to Acquire Avera Semi, Creating an Infrastructure ASIC Powerhouse". prnewswire.com. Retrieved 2019-08-29.
  24. ^ Shilov, Anton. "GlobalFoundries to Sell 200-mm Fab 3E to Vanguard, Exits MEMS Business". anandtech.com. Retrieved 2019-08-29.
  25. ^ eric.millington (2019-04-22). "ON Semiconductor and GlobalFoundries Partner to Transfer Ownership of East Fishkill, NY 300mm Facility". GlobalFoundries. Retrieved 2019-08-29.
  26. ^ eric.millington (2019-08-13). "Toppan Photomasks and GlobalFoundries Enter into Multi-Year Supply Agreement". GlobalFoundries. Retrieved 2019-08-29.
  27. ^ "GlobalFoundries Delivers Industry's First Production-ready eMRAM on 22FDX Platform for IoT and Automotive Applications". Design And Reuse. Retrieved 2020-03-12.
  28. ^ "Chips are down for China, as American firm shuts semiconductor factory". South China Morning Post. 2020-05-20. Retrieved 2021-06-05.
  29. ^ Geng, Yvonne. "GlobalFoundries Abandons Chengdu Wafer Fab". EE Times. Retrieved 1 January 2021.
  30. ^ Zafar, Ramish (August 26, 2019). "GlobalFoundries Sues TSMC & 19 Others For Alleged Patent Infringement".
  31. ^ eric.millington (2019-08-26). "GlobalFoundries Files Patent Infringement Lawsuits Against TSMC In the U.S. and Germany". GlobalFoundries. Retrieved 2019-08-28.
  32. ^ "Media Fact Sheet" (PDF). GlobalFoundries. Aug 25, 2019.
  33. ^ "TSMC Will Vigorously Defend its Proprietary Technology in Response to GlobalFoundries Complaints". tsmc.com. Retrieved 2019-08-28.
  34. ^ "TSMC Files Complaints Against GlobalFoundries in U.S., Germany and Singapore for Infringement of 25 Patents to Affirm its Technology Leadership and to Protect Its Customers and Consumers Worldwide". tsmc.com. Retrieved 2019-10-02.
  35. ^ "TSMC and GlobalFoundries Announce Resolution of Global Disputes Through Broad Global Patent Cross-License". tsmc.com. Retrieved 2019-10-29.
  36. ^ eric.millington (2019-10-28). "GlobalFoundries and TSMC Announce Resolution of Global Disputes Through Broad Global Patent Cross-License". GlobalFoundries. Retrieved 2019-10-30.
  37. ^ McGregor, Jim. "GlobalFoundries Files Suit Against TSMC – The Outcome Could Have Broad Consequences". Forbes.
  38. ^ "TSMC counter-sues US chip rival GlobalFoundries for patent infringement" – via mobile.reuters.com.
  39. ^ "TSMC accuses GlobalFoundries of infringing 25 patents for node processes | ZDNet". zdnet.com.
  40. ^ Clark, Don (June 17, 2011). "Top Executives Resign at Globalfoundries" – via www.wsj.com.
  41. ^ Ajit Manocha
  42. ^ https://www.globalfoundries.com/news-events/press-releases/globalfoundries-announces-new-chief-executive-lead-next-phase-growth
  43. ^ https://twitter.com/i/events/972196527216168960?lang=en
  44. ^ D'Ambrosio, Dan (2015-07-01). "GlobalFoundries takes over in Essex Junction". Burlington Free Press. the sprawling manufacturing campus on Robinson Parkway in Essex Junction
  45. ^ "404". Retrieved 6 August 2015.
  46. ^ Kampman, Jeff (8 September 2016). "GlobalFoundries adds a 12-nm node to its FD-SOI roadmap". TechReport. Retrieved 16 September 2016.
  47. ^ "About Us". GlobalFoundries. September 28, 2016. Archived from the original on March 10, 2009.
  48. ^ Shilov, Anton (3 October 2016). "GlobalFoundries Updates Roadmap". Anandtech. Retrieved 3 October 2016.
  49. ^ Kampman, Jeff (15 September 2016). "GlobalFoundries skips the 10-nm node on the way to 7-nm FinFETs". TechReport. Retrieved 16 September 2016.
  50. ^ "GlobalFoundries Stops All 7nm Development". AnandTech. Retrieved 28 August 2018.
  51. ^ Jump up to: a b "Jim Doyle". Retrieved 6 August 2015.
  52. ^ "ON Semiconductor and GlobalFoundries Partner to Transfer Ownership of East Fishkill, NY 300mm Facility". Retrieved 24 April 2019.
  53. ^ Shilov, Anton (August 15, 2019). "GlobalFoundries Sells Off Photomask Assets to Toppan".
  54. ^ Bolaji Ojo, EE Times. "ATIC to buy, fold Chartered into GlobalFoundries." September 7, 2009. Retrieved August 10, 2015.
  55. ^ By Alex Barinka and Alan King, Bloomberg. "IBM to Pay GlobalFoundries $1.5 Billion to Take Chip Unit." October 20, 2014. Retrieved August 10, 2015.
  56. ^ "Worldwide Locations". GlobalFoundries. 2016-10-28. Retrieved 2017-09-19.
  57. ^ Moorhead, Patrick. "ON Semiconductor And GlobalFoundries Both Win With Its $430M Fab 10 Deal". Forbes.
  58. ^ Jump up to: a b STMicroelectronics Secures Additional Sourcing for its Leading-Edge 28nm and 20nm FD-SOI Technology with GLOBALFOUNDRIES "[1]". Retrieved October 26, 2020.
  59. ^ Jump up to: a b Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology "[2]". Retrieved October 26, 2020.
  60. ^ Jump up to: a b c d GlobalFoundries SiGe PA Technologies "[3]". Retrieved October 26, 2020.
  61. ^ Jump up to: a b c d GlobalFoundries 130/180nm "[4]". Retrieved December 27, 2019.
  62. ^ Jump up to: a b c d e GlobalFoundries RF SOI Technologies "[5]". Retrieved December 27, 2019.
  63. ^ Jump up to: a b c d e GlobalFoundries SiGe HP Technologies "[6]". Retrieved October 26, 2020.
  64. ^ Jump up to: a b c d GlobalFoundries 130G/LP/EE "[7]". Retrieved October 26, 2020.
  65. ^ Jump up to: a b GlobalFoundries Silicon Photonics "[8]". Retrieved October 26, 2020.
  66. ^ Jump up to: a b c d e f GlobalFoundries 55/65nm "[9]". Retrieved December 27, 2019.
  67. ^ Jump up to: a b c GlobalFoundries AMOLED Display Controllers "[10]". Retrieved October 26, 2020.
  68. ^ GlobalFoundries Silicon Photonics: A Marriage of Optical and Digital on GF’s RF Process "[11]". Retrieved October 26, 2020.
  69. ^ Jump up to: a b GlobalFoundries 40nm "[12]". Retrieved December 27, 2019.
  70. ^ Jump up to: a b GlobalFoundries 28nm HKMG Technologies "[13]". Retrieved December 27, 2019.
  71. ^ Jump up to: a b c d GlobalFoundries 22FDX "[14]". Retrieved December 27, 2019.
  72. ^ GlobalFoundries Announces New 22FDX+ Platform "[15]". Retrieved September 25, 2020.
  73. ^ GlobalFoundries 14LPP "[16]". Retrieved October 26, 2020.
  74. ^ GlobalFoundries Delivers Custom 14nm FinFET Technology for IBM Systems "[17]". Retrieved January 14, 2020.
  75. ^ GlobalFoundries 12LP 12nm FinFET Technology "[18]". Retrieved December 27, 2019.
  76. ^ GlobalFoundries Introduces 12LP+ FinFET Solution for Cloud and Edge AI Applications "[19]". Retrieved October 26, 2020.

External links[]

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