Indium gallium aluminium nitride
Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc.[expand acronym] This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN.
Categories:
- Indium compounds
- Gallium compounds
- Aluminium compounds
- Nitrides
- Inorganic compound stubs