600 nm process

The 600 nm process refers to the level of CMOS (MOSFET) semiconductor fabrication process technology that was commercialized around the 1990–1995 timeframe, by leading semiconductor companies like Mitsubishi Electric, Toshiba, NEC, Intel and IBM.

History[]

A MOSFET device with a 500 nm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.^[1] A CMOS device with a 500 nm NMOS channel length and 900 nm PMOS channel length was fabricated by Tsuneo Mano, J. Yamada, Junichi Inoue and S. Nakajima at Nippon Telegraph and Telephone (NTT) in 1983.^[2]^[3]

A CMOS device with 500 nm channel length was fabricated by an IBM T.J. Watson Research Center team led by Hussein I. Hanafi and Robert H. Dennard in 1987.^[4] Commercial 600 nm CMOS memory chips were manufactured by Mitsubishi Electric, Toshiba and NEC in 1989.^[5]

Products featuring 600 nm manufacturing process[]

Mitsubishi Electric, Toshiba and NEC introduced 16 Mbit DRAM memory chips manufactured with a 600 nm process in 1989.^[5]
NEC introduced a 16 Mbit EPROM memory chip manufactured with this process in 1990.^[5]
Mitsubishi introduced a 16 Mbit flash memory chip manufactured with this process in 1991.^[5]
Intel 80486DX4 CPU launched in 1994 was manufactured using this process.
IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 600 nm.
Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz were also manufactured using this process.

References[]

^ Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. CiteSeerX 10.1.1.334.2417. doi:10.1109/JSSC.1974.1050511. S2CID 283984.
^ Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
^ Mano, Tsuneo; Yamada, J.; Inoue, Junichi; Nakajima, S. (1983). "Submicron VLSI memory circuits". 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. XXVI: 234–235. doi:10.1109/ISSCC.1983.1156549. S2CID 42018248.
^ Hanafi, Hussein I.; Dennard, Robert H.; Haddad, Nadim F.; Taur, Yuan; Sun, J. Y. C.; Rodriguez, M. D. (September 1987). "0.5 μm CMOS Device Design and Characterization". ESSDERC '87: 17th European Solid State Device Research Conference: 91–94.
^ ^a ^b ^c ^d "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.

Preceded by 800 nm	CMOS manufacturing processes	Succeeded by 350 nm

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[1] Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. CiteSeerX 10.1.1.334.2417. doi:10.1109/JSSC.1974.1050511. S2CID 283984.

[Gealow-2] Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.

[3] Mano, Tsuneo; Yamada, J.; Inoue, Junichi; Nakajima, S. (1983). "Submicron VLSI memory circuits". 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. XXVI: 234–235. doi:10.1109/ISSCC.1983.1156549. S2CID 42018248.

[4] Hanafi, Hussein I.; Dennard, Robert H.; Haddad, Nadim F.; Taur, Yuan; Sun, J. Y. C.; Rodriguez, M. D. (September 1987). "0.5 μm CMOS Device Design and Characterization". ESSDERC '87: 17th European Solid State Device Research Conference: 91–94.

[stol-5] "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.

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Semiconductor device fabrication

MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm ~ 2022 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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