List of semiconductor scale examples

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Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes.

Timeline of MOSFET demonstrations[]

See also: MOSFET, Semiconductor device fabrication, and Transistor density


PMOS and NMOS[]

MOSFET (PMOS and NMOS) demonstrations
Date Channel length Oxide thickness[1] MOSFET logic Researcher(s) Organization Ref
June 1960 20,000 nm 100 nm PMOS Mohamed M. Atalla, Dawon Kahng Bell Telephone Laboratories [2][3]
NMOS
10,000 nm 100 nm PMOS Mohamed M. Atalla, Dawon Kahng Bell Telephone Laboratories [4]
NMOS
May 1965 8,000 nm 150 nm NMOS Chih-Tang Sah, Otto Leistiko, A.S. Grove Fairchild Semiconductor [5]
5,000 nm 170 nm PMOS
December 1972 1,000 nm ? PMOS Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu IBM T.J. Watson Research Center [6][7][8]
1973 7,500 nm ? NMOS Sohichi Suzuki NEC [9][10]
6,000 nm ? PMOS ? Toshiba [11][12]
October 1974 1,000 nm 35 nm NMOS Robert H. Dennard, Fritz H. Gaensslen, Hwa-Nien Yu IBM T.J. Watson Research Center [13]
500 nm
September 1975 1,500 nm 20 nm NMOS Ryoichi Hori, Hiroo Masuda, Osamu Minato Hitachi [7][14]
March 1976 3,000 nm ? NMOS ? Intel [15]
April 1979 1,000 nm 25 nm NMOS William R. Hunter, L. M. Ephrath, Alice Cramer IBM T.J. Watson Research Center [16]
December 1984 100 nm 5 nm NMOS Toshio Kobayashi, Seiji Horiguchi, K. Kiuchi Nippon Telegraph and Telephone [17]
December 1985 150 nm 2.5 nm NMOS Toshio Kobayashi, Seiji Horiguchi, M. Miyake, M. Oda Nippon Telegraph and Telephone [18]
75 nm ? NMOS Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis MIT [19]
January 1986 60 nm ? NMOS Stephen Y. Chou, Henry I. Smith, Dimitri A. Antoniadis MIT [20]
June 1987 200 nm 3.5 nm PMOS Toshio Kobayashi, M. Miyake, K. Deguchi Nippon Telegraph and Telephone [21]
December 1993 40 nm ? NMOS Mizuki Ono, Masanobu Saito, Takashi Yoshitomi Toshiba [22]
September 1996 16 nm ? PMOS Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba NEC [23]
June 1998 50 nm 1.3 nm NMOS Khaled Z. Ahmed, Effiong E. Ibok, Miryeong Song Advanced Micro Devices (AMD) [24][25]
December 2002 6 nm ? PMOS Bruce Doris, Omer Dokumaci, Meikei Ieong IBM [26][27][28]
December 2003 3 nm ? PMOS Hitoshi Wakabayashi, Shigeharu Yamagami NEC [29][27]
? NMOS

CMOS (single-gate)[]

Complementary MOSFET (CMOS) demonstrations (single-gate)
Date Channel length Oxide thickness[1] Researcher(s) Organization Ref
February 1963 ? ? Chih-Tang Sah, Frank Wanlass Fairchild Semiconductor [30][31]
1968 20,000 nm 100 nm ? RCA Laboratories [32]
1970 10,000 nm 100 nm ? RCA Laboratories [32]
December 1976 2,000 nm ? A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. White Mitel Semiconductor [33]
February 1978 3,000 nm ? Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio Sakai Hitachi Central Research Laboratory [34][35][36]
February 1983 1,200 nm 25 nm R.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. Pelley Intel [37][38]
900 nm 15 nm Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima Nippon Telegraph and Telephone (NTT) [37][39]
December 1983 1,000 nm 22.5 nm G.J. Hu, Yuan Taur, Robert H. Dennard, Chung-Yu Ting IBM T.J. Watson Research Center [40]
February 1987 800 nm 17 nm T. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige Hirano Matsushita [37][41]
700 nm 12 nm Tsuneo Mano, J. Yamada, Junichi Inoue, S. Nakajima Nippon Telegraph and Telephone (NTT) [37][42]
September 1987 500 nm 12.5 nm Hussein I. Hanafi, Robert H. Dennard, Yuan Taur, Nadim F. Haddad IBM T.J. Watson Research Center [43]
December 1987 250 nm ? Naoki Kasai, Nobuhiro Endo, Hiroshi Kitajima NEC [44]
February 1988 400 nm 10 nm M. Inoue, H. Kotani, T. Yamada, Hiroyuki Yamauchi Matsushita [37][45]
December 1990 100 nm ? Ghavam G. Shahidi, Bijan Davari, Yuan Taur, James D. Warnock IBM T.J. Watson Research Center [46]
1993 350 nm ? ? Sony [47]
1996 150 nm ? ? Mitsubishi Electric
1998 180 nm ? ? TSMC [48]
December 2003 5 nm ? Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki Ikezawa NEC [29][49]

Multi-gate MOSFET (MuGFET)[]

Multi-gate MOSFET (MuGFET) demonstrations
Date Channel length MuGFET type Researcher(s) Organization Ref
August 1984 ? DGMOS Toshihiro Sekigawa, Yutaka Hayashi Electrotechnical Laboratory (ETL) [50]
1987 2,000 nm DGMOS Toshihiro Sekigawa Electrotechnical Laboratory (ETL) [51]
December 1988 250 nm DGMOS Bijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. Oh IBM T.J. Watson Research Center [52][53]
180 nm
? GAAFET Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe Toshiba [54][55][56]
December 1989 200 nm FinFET Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57][58][59]
December 1998 17 nm FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor University of California (Berkeley) [60][61]
2001 15 nm FinFET Chenming Hu, Yang‐Kyu Choi, Nick Lindert, Tsu-Jae King Liu University of California (Berkeley) [60][62]
December 2002 10 nm FinFET Shibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey Bokor University of California (Berkeley) [60][63]
June 2006 3 nm GAAFET Hyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan Ryu KAIST [64][65]

Other types of MOSFET[]

MOSFET demonstrations (other types)
Date Channel
length
(nm) 		Oxide
thickness
(nm)[1] 		MOSFET
type 		Researcher(s) Organization Ref
October 1962 ? ? TFT Paul K. Weimer RCA Laboratories [66][67]
1965 ? ? GaAs H. Becke, R. Hall, J. White RCA Laboratories [68]
October 1966 100,000 100 TFT T.P. Brody, H.E. Kunig Westinghouse Electric [69][70]
August 1967 ? ? FGMOS Dawon Kahng, Simon Min Sze Bell Telephone Laboratories [71]
October 1967 ? ? MNOS H.A. Richard Wegener, A.J. Lincoln, H.C. Pao Sperry Corporation [72]
July 1968 ? ? BiMOS Hung-Chang Lin, Ramachandra R. Iyer Westinghouse Electric [73][74]
October 1968 ? ? BiCMOS Hung-Chang Lin, Ramachandra R. Iyer, C.T. Ho Westinghouse Electric [75][74]
1969 ? ? VMOS ? Hitachi [76][77]
September 1969 ? ? DMOS Y. Tarui, Y. Hayashi, Toshihiro Sekigawa Electrotechnical Laboratory (ETL) [78][79]
October 1970 ? ? ISFET Piet Bergveld University of Twente [80][81]
October 1970 1000 ? DMOS Y. Tarui, Y. Hayashi, Toshihiro Sekigawa Electrotechnical Laboratory (ETL) [82]
1977 ? ? VDMOS John Louis Moll HP Labs [76]
? ? LDMOS ? Hitachi [83]
July 1979 ? ? IGBT Bantval Jayant Baliga, Margaret Lazeri General Electric [84]
December 1984 2000 ? BiCMOS H. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. Nishio Hitachi [85]
May 1985 300 ? ? K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. Namatsu Nippon Telegraph and Telephone [86]
February 1985 1000 ? BiCMOS H. Momose, Hideki Shibata, S. Saitoh, Jun-ichi Miyamoto Toshiba [87]
November 1986 90 8.3 ? Han-Sheng Lee, L.C. Puzio General Motors [88]
December 1986 60 ? ? Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. Smith MIT [89][20]
May 1987 ? 10 ? Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. Basavaiah IBM T.J. Watson Research Center [90]
December 1987 800 ? BiCMOS Robert H. Havemann, R. E. Eklund, Hiep V. Tran Texas Instruments [91]
June 1997 30 ? EJ-MOSFET Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba NEC [92]
1998 32 ? ? ? NEC [27]
1999 ? ? ?
April 2000 8 ? EJ-MOSFET Hisao Kawaura, Toshitsugu Sakamoto, Toshio Baba NEC [93]

Commercial products using micro-scale MOSFETs[]

Products featuring 20 μm manufacturing process[]

Products featuring 10 μm manufacturing process[]

Main article: 10 μm process

Products featuring 8 μm manufacturing process[]

Products featuring 6 μm manufacturing process[]

Main article: 6 μm process

Products featuring 3 μm manufacturing process[]

Main article: 3 μm process

Products featuring 1.5 μm manufacturing process[]

Main article: 1.5 μm process

Products featuring 1 μm manufacturing process[]

Main article: 1 μm process
  • NTT's DRAM memory chips, including its 64 kb chip in 1979 and 256 kb chip in 1980.[37]
  • NEC's 1 Mb DRAM memory chip in 1984.[47]
  • Intel 80386 CPU launched in 1985.

Products featuring 800 nm manufacturing process[]

Main article: 800 nanometer
  • NTT's 1 Mb DRAM memory chip in 1984.[37]
  • NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986.[47]
  • Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987.[37]
  • Toshiba's 4 Mb EPROM memory chip in 1987.[47]
  • Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987.[47]
  • Intel 486 CPU launched in 1989.
  • microSPARC I launched in 1992.
  • First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993.

Products featuring 600 nm manufacturing process[]

Main article: 600 nanometer
  • Mitsubishi Electric, Toshiba and NEC introduced 16 Mb DRAM memory chips manufactured with a 600 nm process in 1989.[47]
  • NEC's 16 Mb EPROM memory chip in 1990.[47]
  • Mitsubishi's 16 Mb flash memory chip in 1991.[47]
  • Intel 80486DX4 CPU launched in 1994.
  • IBM/Motorola PowerPC 601, the first PowerPC chip, was produced in 0.6 μm.
  • Intel Pentium CPUs at 75 MHz, 90 MHz and 100 MHz.

Products featuring 350 nm manufacturing process[]

Main article: 350 nanometer

Products featuring 250 nm manufacturing process[]

Main article: 250 nanometer
  • Hitachi's 16 Mb SRAM memory chip in 1993.[47]
  • Hitachi and NEC introduced 256 Mb DRAM memory chips manufactured with this process in 1993, followed by Matsushita, Mitsubishi Electric and Oki in 1994.[47]
  • NEC's 1 Gb DRAM memory chip in 1995.[47]
  • Hitachi's 128 Mb NAND flash memory chip in 1996.[47]
  • DEC Alpha 21264A, which was made commercially available in 1999.
  • AMD K6-2 Chomper and Chomper Extended. Chomper was released on May 28, 1998.
  • AMD K6-III "Sharptooth" used 250 nm.
  • Mobile Pentium MMX Tillamook, released in August 1997.
  • Pentium II Deschutes.
  • Dreamcast console's Hitachi SH-4 CPU and PowerVR2 GPU, released in 1998.
  • Pentium III Katmai.
  • Initial PlayStation 2's Emotion Engine CPU.

Processors using 180 nm manufacturing technology[]

Main article: 180 nanometer
  • Intel Coppermine E- October 1999
  • Sony PlayStation 2 console's Emotion Engine and Graphics Synthesizer – March 2000[100]
  • ATI Radeon R100 and RV100 Radeon 7000 – 2000
  • AMD Athlon Thunderbird – June 2000
  • Intel Celeron (Willamette) – May 2002
  • Motorola PowerPC 7445 and 7455 (Apollo 6) – January 2002

Processors using 130 nm manufacturing technology[]

Main article: 130 nanometer
  • Fujitsu SPARC64 V – 2001[101]
  • Gekko by IBM and Nintendo (GameCube console) – 2001
  • Motorola PowerPC 7447 and 7457 – 2002
  • IBM PowerPC G5 970 – October 2002 – June 2003
  • Intel Pentium III Tualatin and Coppermine – 2001-04
  • Intel Celeron Tualatin-256 – 2001-10-02
  • Intel Pentium M Banias – 2003-03-12
  • Intel Pentium 4 Northwood- 2002-01-07
  • Intel Celeron Northwood-128 – 2002-09-18
  • Intel Xeon Prestonia and Gallatin – 2002-02-25
  • VIA C3 – 2001
  • AMD Athlon XP Thoroughbred, Thorton, and Barton
  • AMD Athlon MP Thoroughbred – 2002-08-27
  • AMD Athlon XP-M Thoroughbred, Barton, and Dublin
  • AMD Duron Applebred – 2003-08-21
  • AMD K7 Sempron Thoroughbred-B, Thorton, and Barton – 2004-07-28
  • AMD K8 Sempron Paris – 2004-07-28
  • AMD Athlon 64 Clawhammer and Newcastle – 2003-09-23
  • AMD Opteron Sledgehammer – 2003-06-30
  • Elbrus 2000 1891ВМ4Я (1891VM4YA) – 2008-04-27 [1]
  • MCST-R500S 1891BM3 – 2008-07-27 [2]
  • Vortex 86SX – [3]

Commercial products using nano-scale MOSFETs[]

See also: Nanoelectronics and Nanocircuitry

Chips using 90 nm manufacturing technology[]

Main article: 90 nanometer
  • Sony–Toshiba Emotion Engine+Graphics Synthesizer (PlayStation 2) – 2003[100]
  • IBM PowerPC G5 970FX – 2004
  • Elpida Memory's 90 nm DDR2 SDRAM process – 2005
  • IBM PowerPC G5 970MP – 2005
  • IBM PowerPC G5 970GX – 2005
  • IBM Waternoose Xbox 360 Processor – 2005
  • IBM–Sony–Toshiba Cell processor – 2005
  • Intel Pentium 4 Prescott – 2004-02
  • Intel Celeron D Prescott-256 – 2004-05
  • Intel Pentium M Dothan – 2004-05
  • Intel Celeron M Dothan-1024 – 2004-08
  • Intel Xeon Nocona, Irwindale, Cranford, Potomac, Paxville – 2004-06
  • Intel Pentium D Smithfield – 2005-05
  • AMD Athlon 64 Winchester, Venice, San Diego, Orleans – 2004-10
  • AMD Athlon 64 X2 Manchester, Toledo, Windsor – 2005-05
  • AMD Sempron Palermo and Manila – 2004-08
  • AMD Turion 64 Lancaster and Richmond – 2005-03
  • AMD Turion 64 X2 Taylor and Trinidad – 2006-05
  • AMD Opteron Venus, Troy, and Athens – 2005-08
  • AMD Dual-core Opteron Denmark, Italy, Egypt, Santa Ana, and Santa Rosa
  • VIA C7 – 2005-05
  • Loongson (Godson) 2Е STLS2E02 – 2007-04
  • Loongson (Godson) 2F STLS2F02 – 2008-07
  • MCST-4R – 2010-12
  • Elbrus-2C+ – 2011-11

Processors using 65 nm manufacturing technology[]

Main article: 65 nanometer
  • Sony–Toshiba EE+GS (PStwo)[102] – 2005
  • Intel Pentium 4 (Cedar Mill) – 2006-01-16
  • Intel Pentium D 900-series – 2006-01-16
  • Intel Celeron D (Cedar Mill cores) – 2006-05-28
  • Intel Core – 2006-01-05
  • Intel Core 2 – 2006-07-27
  • Intel Xeon (Sossaman) – 2006-03-14
  • AMD Athlon 64 series (starting from Lima) – 2007-02-20
  • AMD Turion 64 X2 series (starting from Tyler) – 2007-05-07
  • AMD Phenom series
  • IBM's Cell Processor – PlayStation 3 – 2007-11-17
  • IBM's z10
  • Microsoft Xbox 360 "Falcon" CPU – 2007–09
  • Microsoft Xbox 360 "Opus" CPU – 2008
  • Microsoft Xbox 360 "Jasper" CPU – 2008–10
  • Microsoft Xbox 360 "Jasper" GPU – 2008–10
  • Sun UltraSPARC T2 – 2007–10
  • AMD Turion Ultra – 2008-06[103]
  • TI OMAP 3 Family[104] – 2008-02
  • VIA Nano – 2008-05
  • Loongson – 2009
  • NVIDIA GeForce 8800GT GPU – 2007

Processors using 45 nm technology[]

Main article: 45 nanometer

Chips using 32 nm technology[]

Main article: 32 nanometer
  • Toshiba produced commercial 32 Gb NAND flash memory chips with the 32 nm process in 2009.[106]
  • Intel Core i3 and i5 processors, released in January 2010[107]
  • Intel 6-core processor, codenamed Gulftown[108]
  • Intel i7-970, was released in late July 2010, priced at approximately US$900
  • AMD FX Series processors, codenamed Zambezi and based on AMD's Bulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
  • Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in September 2011[109]

Chips using 24–28 nm technology[]

  • SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.[110]
  • Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.[111]
  • In 2016 MCST's 28 nm processor Elbrus-8S went for serial production.[112][113]

Chips using 22 nm technology[]

Main article: 22 nanometer
  • Intel Core i7 and Intel Core i5 processors based on Intel's Ivy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.[114]

Chips using 20 nm technology[]

Chips using 16 nm technology[]

Chips using 14 nm technology[]

Main article: 14 nanometer
  • Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015.[117]
  • AMD Ryzen processors based on AMD's Zen or Zen+ architectures and which uses 14 nm FinFET technology.[118]

Chips using 10 nm technology[]

Main article: 10 nanometer

Chips using 7 nm technology[]

Main article: 7 nanometer
  • TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.[124]
  • Samsung and TSMC began mass production of 7 nm devices in 2018.[125]
  • Apple A12 and Huawei Kirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.[126]
  • AMD began using TSMC 7nm starting with the Vega 20 GPU in November 2018,[127] with Zen 2-based CPUs and APUs from July 2019,[128] and for both PlayStation 5 [129]and Xbox Series X/S [130] consoles’ APUs, released both in November 2020.

Chips using 5 nm technology[]

Main article: 5 nanometer
  • Samsung began production of 5 nm chips (5LPE) in late 2018.[131]
  • TSMC began production of 5 nm chips (CLN5FF) in April 2019.[132]

3 nm technology[]

Main article: 3 nm process

See also[]

References[]

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