6 µm process

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Semiconductor device fabrication
MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977  1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm ~ 2022 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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The 6 μm process is the level of MOSFET semiconductor process technology that was reached around 1974,^[1][2] by leading semiconductor companies such as Toshiba and Intel.

Products featuring 6 μm manufacturing process[]

• Toshiba TLCS-12, a microprocessor developed for the Ford EEC (Electronic Engine Control) system in 1973. It was manufactured on a 6 μm process, and went into mass production in 1975.^[3]
• Intel 8080 CPU launched in 1974 was manufactured using this process.^[4]
• Zilog Z80 launched 1976 was manufactured in 5 μm and 4 μm.^{[5][circular reference]}
• The Television Interface Adaptor, the custom graphics and audio chip developed for the Atari 2600 in 1977. It was designed for a 6 μm process.^[6]
• The optical mouse demonstrated by Richard F. Lyon of Xerox in 1981 had a 5 μm NMOS chip.^[7][8]
• MOS Technology SID, a programmable sound generator developed for the Commodore 64 in 1982. It was designed for a 7 μm and 6 μm process.^[6]
• MOS Technology VIC-II, a video display controller developed for the Commodore 64 in 1982. It was designed for a 5 μm process.^[6]

References[]

External links[]

• Brief timeline of microprocessor development

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